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Prof. Dr. Mathias Schubert
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Publications
Books |
Bookchapters | Journal articles:
submission
2008
2007
2006
2005
2004
2003
2002
2001
2000
1999
1998
1997
1996
1995
h-index
Electronic documents are intended for internal use only. Corrections are added for misprints where known.
Journal articles in submission may be transferred upon
request
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Books |
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Infrared Ellipsometry on Semiconductor Layer Structures:
Phonons, Plasmons and Polaritons
M. Schubert
Springer Tracts in Modern Physics, Vol 209 (Springer, Heidelberg, 2004)
ISBN 3-540-23249-4 [View PDF (11903kB)] |
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Bookchapters |
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Anisotropic phonons in non-polar nitrides
V. Darakchieva, T. Paskova, M. Schubert et al.
In Non-polar nitrides: Growth, properties and devices edited by T. Paskova et. al
(?, 200?)
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Optical Properties of Zinc Oxide and related Compounds
C. Bundesmann, R. Schmidt-Grund, M. Schubert
In Zinc Oxide as Transparent Electronic Material and its Application in Thin Film Solar Cells edited by A. Klein and K. Ellmer
Springer Series in Materials Science, Vol 104 (Springer, Berlin, 2007)
ISBN-10: 3540736115 [View all pdf (63191kB)];[Chap 1],
[Chap 2],
[Chap 3],
[Chap 4],
[Chap 5],
[Chap 6],
[Chap 7],
[Chap 8],
[Chap 9] |
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Theory and Application of Generalized Ellipsometry
M. Schubert
In Handbook of Ellipsometry edited by G.E. Irene and H.G. Tompkins
(William Andrew Publishing, Norwich, N.Y., 2005) ISBN: 0-8155-1499-9
(Springer-Verlag GmbH Co. KG, Heidelberg, 2004) ISBN: 3-540-22293-6 [View PDF (2374kB)]
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Phonons and Free-Carrier Properties of Binary, Ternary, and Quaternary Group-III Nitride Layers Measured by Infrared Spectroscopic Ellipsometry
A. Kasic, M. Schubert, J. Off, B. Kuhn, F. Scholz, S. Einfeldt, T. Böttcher, D. Hommel, D. J. As, U. Koehler, A. Dadgar, A. Krost, Y. Saito, Y. Nanishi, M. R. Correia, S. Pereira, V. Darakchieva, B. Monemar, H. Amano, I. Akasaki, G. Wagner
In Group III-Nitrides and Their Heterostructures: Growth, Characterization and Applications edited by F. Bechstedt, B. K. Meyer and M. Stutzmann (Wiley-VCH, Berlin, 2003) ISBN 3-527-40475-9
[View PDF (1328kB)]
also in: phys. stat. sol. c 0, 1750 - 1769 (2003)
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Metalorganic chemical vapor phase epitaxy of gallium-nitride on silicon
A. Dadgar, A. Strittmatter, J. Blasing, M. Poschenrieder, O. Contreras, P. Veit, T. Riemann, F. Bertram, A. Reiher, A. Krtschil, A. Diez, T. Hempel,
T. Finger, A. Kasic, M. Schubert, D. Bimberg, F. A. Ponce, J. Christen, A. Krost
In Group III-Nitrides and Their Heterostructures: Growth, Characterization and Applications edited by F. Bechstedt, B. K. Meyer and M. Stutzmann (Wiley-VCH, Berlin, 2003) ISBN 3-527-40475-9
[View PDF (2183kB)]
also in: phys. stat. sol. c 0, 1583 - 1606 (2003)
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Generalized Ellipsometry
M. Schubert
In Introduction to Complex Mediums for Optics and Electromagnetics edited by W. S. Weiglhofer and A. Lakhtakia
(SPIE, Bellingham, WA, 2003) ISBN 0819449474 [View PDF (852kB)]
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MOVPE growth, Phonons, Band-to-Band Transitions and Dielectric Functions of InGaNAs/GaAs Superlattices and Quantum Wells
G. Leibiger, V. Gottschalch, G. Benndorf, J. Šik, M. Schubert
In Compound semiconductor heterojunctions: physics and applications edited by W. Cay and others
(Research Signpost, Kerala, 2003) ISBN 8177361708
[View PDF part 1 (2049kB)]
[View PDF part 2 (1946kB)]
[View PDF part 3 (1842kB)]
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Articles in submission: |
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412. |
 | The optical Hall effect - Experiment
M. Schubert, P. Kuehne, V. Darakchieva, S. Schoeche, S. Knight, and C. M. Herzinger
J. Opt. Soc. Am. A , (2020) |
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411. |
| The influence of strain and composition on the infrared active phonons in epitaxial β-(AlxGa1-x)2O3 deposited onto (010) β-Ga2O3
M. Stokey, R. Korlacki, S. Knight, M. Hilfiker, V. Darakchieva, A. Mauze, Y. Zhang, J. Speck, and M. Schubert
TBA XXX, (2021) |
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410. |
| Strain and stress relationships for longitudinal optical phonon modes in β-Ga2O3
R. Korlacki, J. Knudtson, M. Stokey, A. Mock, S. Knight, A. Papamichail, V. Darakchieva, and M. Schubert
TBA XX, XX (2022) |
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409. |
 | Dielectric function, band-to-band transitions, and exciton properties of bulk single-crystal In2O3 from room-temperature to 600^\circC determined by \textitin-situ spectroscopic ellipsometry
S. G. Kilic, U. Kilic, M. Hilfiker, E. Schubert, Z. Galazka, and M. Schubert
J. Appl. Phys. X, X (2026) |
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408. |
 | Dielectric functions of bulk single-crystal NdGaO3 determined by Mueller matrix spectroscopic ellipsometry
Y. Traouli, U. Kilic, R. Korlacki, A. Mock, M. Stokey, E. Schubert, and M. Schubert
Phys. Rev. B , (2025) |
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407. |
| Evolution of the near-infrared-to-ultraviolet model dielectric function of InAs from room temperature to 250^\circC determined by spectroscopic ellipsometry
P. R. Sorensen, U. Kilic, Y. Traouli, R. Korlacki, E. Schubert, and M. Schubert
J. Appl. Phys. , (2025) |
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406. |
| Unlocking versatility of interface controlled hybrid nanocolumnar metamaterial platforms for engineered magnetic and optical properties
U. Kilic, C. Briley, A. Ullah, R. Feder, D. Sekora, A. Mock, C. Binek, R. Skomski, H. Schmidt, C. Argyropoulos, E. Schubert, and M. Schubert
TBD , () |
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2008: |
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405. |
 | The optical Hall effect
T. Hofmann, C.M. Herzinger, C. Krahmer, K. Streubel, and M. Schubert
phys. stat. sol. (a) 205, 779 (2008) [View PDF (2.7 MB)] [DOI-link] |
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404. |
 | Dielectric and magnetic birefringence in low-chlorine-doped n-type Zn1-xMnxSe
M. F. Saenger, M. Hetterich, R. D. Kirby, D. J. Sellmyer, and M. Schubert
phys. stat. sol. (c) 5, 1007 (2008) [View PDF (493 kB)] [DOI-link] |
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403. |
| Investigation of the free charge carrier properties at the ZnO sapphire interface in a-plane ZnO films studied by generalized infrared ellipsometry
Ch. Sturm, T. Chavdarov, R. Schmidt-Grund, B. Rheinlaeander, C. Bundesmann, H. Hochmuth, M. Lorenz, M. Schubert, and M. Grundmann
phys. stat. sol. (c) , (2008) [View PDF (392 kB)] [DOI-link] |
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402. |
| Generalized Ellipsometry Determination of Non-reciprocity in Chiral Silicon Sculptured Thin Films
D. Schmidt, E. Schubert, and M. Schubert
phys. stat. sol. (a) 205, 748 (2008) [View PDF (1.0 MB)] [DOI-link] |
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401. |
| Electrooptic ellipsometry study of piezoelectric BaTiO3-ZnO heterostructures
V. M. Voora, T. Hofmann, M. Brandt, M. Lorenz, M. Grundmann, and M. Schubert
phys. stat. sol. (c) 5, 1328 (2008) [View PDF (424 kB)] [DOI-link] |
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400. |
| Polaron transitions in charge intercalated amorphous tungsten oxide thin films
M. F. Saenger, T. Höing, T. Hofmann, and M. Schubert
phys. stat. sol. (a) 205, 914 (2008) [View PDF (580 kB)] [DOI-link] |
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399. |
 | Optical Hall-effect in hexagonal InN
T. Hofmann, V. Darakchieva, B. Monemar, H. Lu, W. J. Schaff, and M. Schubert
J. Electron. Mater 37, 611-615 (2008) [View PDF (420 kB)] [DOI-link] |
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398. |
| Interface-charge-coupled polarization response of Pt-BaTiO3-ZnO-Pt heterojunctions:
A physical model approach
V. M. Voora, T. Hofmann, M. Brandt, M. Lorenz, M. Grundmann, N. Ashkenov, and M. Schubert
J. Electron. Mater 37, 1029-1034 (2008) [View PDF (397 kB)] [DOI-link] |
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397. |
| Optical Hall effect studies on modulation-doped AlxGa1-xAs:Si/GaAs quantum wells
T. Hofmann, C. von Middendorff, V. Gottschalch, and M. Schubert
phys. stat. sol. (c) 5, 1386 - 1390 (2008) [View PDF (400 kB)] [DOI-link] |
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396. |
 | Vacuum Ultraviolet Dielectric Function and Band Structure of ZnO
R. Schmidt-Grund, B. Rheinländer, E. M. Kaidashev, M. Lorenz, M. Grundmann, D. Fritsch, M. Schubert, H. Schmidt, and C. M. Herzinger
Journal of the Korean Physical Society 53, 88-93 (2008) [View PDF (568 kB)] |
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395. |
| Polaron and Phonon properties in proton intercalated amorphous tungsten oxide thin films
M. F. Saenger, T. Höing, B. W. Robertson, R. B. Billa, T. Hofmann, E. Schubert, and M. Schubert
Phys. Rev. B 75, 245205 (2008) [View PDF (987 kB)] [DOI-link] |
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394. |
 | Interface-charge-coupled polarization response model of Pt-BaTiO3-ZnO-Pt heterojunctions: Physical parameters variation
V. M. Voora, T. Hofmann, A. C. Kjerstad, M. Brandt, M. Lorenz,
M. Grundmann, and M. Schubert
Mat. Res. Soc. Symp. Proc. 1074E, 1074-I01-11 (2008) [View PDF (87 kB)] |
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393. |
| Infrared behavior of aluminum nanostructure sculptured thin films
T. Hofmann, M. Schubert, D. Schmidt, and E. Schubert
Mat. Res. Soc. Symp. Proc. 1080E, 1080-O04-16 (2008) [View PDF (598 kB)] [DOI-link] |
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392. |
 | Lattice parameters of bulk GaN fabricated by halide vapor phase epitaxy
V. Darakchieva, B. Monemar, A. Usui, M. F. Saenger, and M. Schubert
J. Cryst. Growth 310, 959-965 (2008) [DOI-link] |
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391. |
 | Kramers-Kronig-consistent optical functions of anisotropic crystals: generalized spectroscopic ellipsometry on pentacene
M. Dressel, B. Gompf, D. Faltermeier, A. K. Tripathi, J. Pflaum, and M. Schubert
Opt. Express 16, 19770 (2008) [View PDF (265 kB)] [DOI-link] |
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390. |
| In-situ monitoring of the p- and n-type doping in AlGaInP
C. Krahmer, A. Behres, M. Schubert, and K. Streubel
J. Cryst. Growth 310, 4727 (2008) [DOI-link] |
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389. |
 | Characterization of an optically pumped ZnO-based 3rd order distributed feedback laser
D. Hofstetter, Y. Bonetti, E. BaumannF, R. Giorgetta, A.-H. El-Shaer, A. Bakin, A. Waag, R. Schmidt-Grund, M. Grundmann, and M. Schubert
SPIE Vol. 6895, 68950J (2008) [DOI-link] |
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388. |
 | Unravelling the free electron behavior in InN
V. Darakchieva, T. Hofmann, M. Schubert, B.E. Sernelius, F. Giuliani, M.-Y. Xie, P.O.A. Persson, B. Monemar, W.J. Schaff, C.-L. Hsiao, L.-C. Chen, and Y. Nanishi
Conference on Optoelectronic and Microelectronic Materials and Devices ISBN 978-1-4244-2716-1, 90-97 (2008) [View PDF (718 kB)] [DOI-link] |
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387. |
| Preface: phys. stat. sol. (c) 5/5 pages 1000-1002 (4th International Conference on Spectroscopic Ellipsometry Stockholm 2007)
H. Arwin, U. Beck, and M. Schubert
phys. stat. sol. c 5, 1000–1002 (2008) [View PDF (269 kB)] [DOI-link] |
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2007: |
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386. |
 | Demonstration of an ultraviolet ZnO-based optically pumped third order distributed feedback laser
D. Hofstetter, Y. Bonetti,, F. R. Giorgetta, A-H El-Shaer, A. Bakin, A. Waag, R. Schmidt-Grund, M. Schubert, and M. Grundmann
Appl. Phys. Lett. 91, 111108 (2007) [View PDF (423 kB)] [DOI-link] |
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385. |
| Dielectric constants and phonon modes of amorphous hafnium aluminate deposited by metal organic chemical vapor deposition
C. Bundesmann, O. Buiu, S. Hall, and M. Schubert
Appl. Phys. Lett. 91, 121916 (2007) [View PDF (139 kB)] [DOI-link] |
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384. |
| Electron effective mass and phonon modes in GaAs incorporating boron and indium
T. Hofmann, M. Schubert, G. Leibiger, and V. Gottschalch
Appl. Phys. Lett. 90, 182110 (2007) [View PDF (96 kB)] [DOI-link] |
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383. |
| Polarization coupling in epitaxial ZnO / BaTiO3 thin film heterostructures on SrTiO3 (100) substrates
M. Lorenz, M. Brandt, J. Schubert, H. Hochmuth, H. von Wenckstern, M. Schubert, and M. Grundmann
SPIE Vol. 6474, 64741S (2007) [DOI-link] |
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382. |
| Anisotropic strain and phonon deformation potentials in GaN
V. Darakchieva, T. Paskova, M. Schubert, H. Arwin, P. P. Paskov, B. Monemar, D. Homme, M. Heuken, J. Off,
F. Scholz, B. A. Haskell, P. T. Fini, J. S. Speck, and S. Nakamura
Phys. Rev. B 75, 195217 (2007) [View PDF (850 kB)] [DOI-link] |
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381. |
 | Ion beam assisted growth of sculptured thin films: Structure alignment and optical fingerprints
E. Schubert, F. Frost, H. Neumann, B. Rauschenbach, B. Fuhrmann, F. Heyroth, J. Rivory, B. Gallas, and M. Schubert
Adv. Solid State Phys. 46, 309-320 (2007) [View PDF (1.1 MB)] [DOI-link] |
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380. |
| Dielectric anisotropy and phonon modes of ordered indirect-gap Al0.52In0.48P studied by far-infrared ellipsometry
T. Hofmann, V. Gottschalch, and M. Schubert
Appl. Phys. Lett. 91, 121908 (2007) [View PDF (217 kB)] [DOI-link] |
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379. |
| Effect of anisotropic strain on phonons in a-plane and c-plane GaN layers
V. Darakehieva, T. Paskova, M. Schubert, P. P. Paskov, H. Arwin, B. Monemar, D. Hommel, M. Heuken, J. Off, B. A. Haskell, P. T. Fini, J. S. Speck, and S. Nakamura
J. Cryst. Growth 300, 233-238 (2007) [DOI-link] |
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378. |
| MOVPE growth investigations of doping and ordering in AlGaAs and GaInP with reflectance anisotropy spectroscopy
C. Krahmer, M. Philippens, M. Schubert, and K. Streubel
J. Cryst. Growth 298, 18-22 (2007) [DOI-link] |
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377. |
 | RAPID MATERIAL OPTICAL DIAGNOSTICS METHOD
M. Schubert
U. S. Pat. App. Publ. 20070229826, (2007) |
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2006: |
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376. |
| Terahertz generalized Mueller-matrix ellipsometry
T. Hofmann, U. Schade, C. M. Herzinger, P. Esquinazi, and M. Schubert
SPIE Vol. 6120, 61200D (2006) [DOI-link] |
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375. |
 | Temperature-dependence of the refractive index and the
optical transitions at the fundamental band-gap of ZnO
R. Schmidt-Grund, N. Ashkenov, M. Schubert, W. Czakai, D. Faltermeier, G. Benndorf, H. Hochmuth, M. Lorenz, and M. Grundmann
AIP Conf. Proc. 893, 271 (2006) [DOI-link] |
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374. |
| Phonon modes, dielectric constants, and exciton mass parameters in ternary MgxZn1-xO
C. Bundesmann, M. Lorenz, M. Grundmann, and M. Schubert
Mat. Res. Soc. Symp. Proc. 928E, GG05-03 (2006) [View PDF (114 kB)] |
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373. |
 | Assessment of phonon mode characteristics via infrared spectroscopic ellipsometry on a-plane GaN
V. Darakchieva, T. Paskova, P. P. Paskov, H. Arwin, M. Schubert, B. Monemar, S. Figge, D. Hommel, B. A. Haskell, P. T. Fini, and S. Nakamura
phys. stat. sol. b 243, 1594-1598 (2006) [View PDF (244 kB)] [DOI-link] |
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372. |
| Refractive indices and band-gap properties of rocksalt MgxZn1-xO (0.68 < x < 1)
R. Schmidt-Grund, A. Carstens, B. Rheinländer, D. Spemann, H. Hochmut, G. Zimmermann, M. Lorenz, M. Schubert, C. M. Herzinger, and M. Grundmann
J. App. Phys. 99, 123701 (2006) [View PDF (183 kB)] [DOI-link] |
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371. |
 | Terahertz magnetooptic generalized ellipsometry using synchrotron and black-body radiation
T. Hofmann, U. Schade, W. Eberhardt, C. M. Herzinger, P. Esquinazi, and M. Schubert
Rev. Sci. Inst. 77, 063902 (2006) [View PDF (313 kB)] [DOI-link] |
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370. |
| Infrared optical properties of MgxZn1-xO thin films: Long-wavelength optical phonons and dielectric constants
C. Bundesmann, A. Rahm, M. Lorenz, M. Grundmann, and M. Schubert
J. App. Phys. 99, 113504 (2006) [View PDF (339 kB)] [DOI-link] |
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369. |
| Conduction-band electron effective mass in Zn0.87Mn0.13Se measured by terahertz and far-infrared magnetooptic ellipsometry
T. Hofmann, U. Schade, K. C. Agarwal, B. Daniel, C. Klingshirn, M. Hetterich, C. M. Herzinger, and M. Schubert
Appl. Phys. Lett. 88, 042105 (2006) [View PDF (85 kB)] [DOI-link] |
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368. |
| Anisotropy of the Gamma-point effective mass and mobility in hexagonal InN
T. Hofmann, T. Chavdarov, V. Darakchieva, H. Lu, W.J. Schaff, and M. Schubert
phys. stat. sol. c 3, 1854-1857 (2006) [View PDF (252 kB)] [DOI-link] |
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367. |
| Phonon properties and doping of ZnMnSe epilayers grown by molecular beam epitaxy
K. C. Agarwal, B. Daniel, T. Hofmann, M. Schubert, C. Klingshirn, and M. Hetterich
phys. stat. sol. b 243, 914 (2006) [View PDF (268 kB)] [DOI-link] |
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366. |
| Bending in HVPE GaN free-standing films: effects of laser lift-off, polishing and high-pressure annealing
T. Paskova, V. Darakchieva, P. P. Paskov, B. Monemar, M. Bukowski, T. Suskiand N. Ashkenov, M. Schubert, and D. Hommel
phys. stat. sol. c 3, 1475 (2006) [DOI-link] |
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365. |
| Recrystallization behavior in chiral sculptured thin films from silicon
E. Schubert, J. Fahlteich, B. Rauschenbach, M. Schubert, M. Lorenz, M. Grundmann, and G. Wagner
J. Appl. Phys. 100, 016107 (2006) [View PDF (217 kB)] [DOI-link] |
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364. |
| Effect of high-temperature annealing on the residual strain and bending of freestanding GaN films grown by hydride vapor phase epitaxy
T. Paskova, D. Hommel, P. P. Paskov, V. Darakchieva, B. Monemar, M. Bockowski, T. Suski, I. Grzegory, F. Tuomisto, K. Saarinen, N. Ashkenov, and M. Schubert
Appl. Phys. Lett. 88, 141909 (2006) [View PDF (535 kB)] [DOI-link] |
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363. |
| In-situ monitoring of MOVPE growth with Reflectance Anisotropy Spectroscopy in an industrial used multi wafer reactor
C. Krahmer, M. Philippens, M. Schubert, and K. Streubel
phys. stat. sol. c 3, 655-658 (2006) [View PDF (237 kB)] [DOI-link] |
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362. |
 | Another century of ellipsometry (Special issue on Paul Karl Ludwig Drude)
M. Schubert
Annalen der Physik 15, 480-497 (2006) [View PDF (1.8 MB)] [DOI-link] |
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361. |
 | Low temperature photoluminescence and infrared dielectric functions of pulsed laser deposited ZnO thin films on silicon
S. Heitsch, C. Bundesmann, G. Wagner, G. Zimmermann, A. Rahm, H. Hochmuth, G. Benndorf, H. Schmid t, M. Schubert, M. Lorenz, and M. Grundmann
Thin Solid Films 496, 234-239 (2006) [View PDF (351 kB)] [DOI-link] |
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2005: |
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360. |
 | Optische Bestimmung der Eigenschaften freier Ladungsträger in ZnO-Dünnfilmen mittels spektroskopischer Infrarotellipsometrie
C. Bundesmann, M. Schubert, H. v. Wenckstern, M. Lorenz, and M. Grundmann
Tagungsband des 3. TCO-Workshops des Forschungsverbundes Solarenergie, Freyburg/Unstrut , 34-36 (2005) [View PDF (87 kB)] |
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359. |
| Composition and properties of ZnS thin films prepared by chemical bath deposition from acid and basic solutions
L. V. Mahkova, I. Konovalov, R. Szargan, N. Ashkenov, M. Schubert, and T. Chassé
phys. stat. sol. (c) 2, 1206 - 1211 (2005) [View PDF (280 kB)] [DOI-link] |
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358. |
| Adsorption of human serum albumin in porous silicon gradients monitored by spatially-resolved spectroscopic ellipsometry
L. M. Karlsson, M. Schubert, N. Ashkenov, and H. Arwin
phys. stat. sol. (c) 2, 3293 - 3297 (2005) [View PDF (230 kB)] [DOI-link] |
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357. |
| Rectifying semiconductor-ferro electric polarization loops and offsets in Pt-BaTiO3-ZnO-Pt thin film capacitor structures
N. Ashkenov, M. Schubert , E. Twerdowski , H. von Wenckstern, B. N. Mbenkum, H. Hochmuth, M. Lorenz, W. Grill, and M. Grundmann
Thin Solid Films 486, 153-157 (2005) [View PDF (283 kB)] [DOI-link] |
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356. |
| Phonon mode behavior of wurtzite AlN/GaN superlattices
V. Darakchieva, E. Valcheva, P. P. Paskov, M. Schubert, T. Paskova, B. Monemar, H. Amano, and I. Akasaki
Phys. Rev. B 71, 115329 (2005) [View PDF (188 kB)] [DOI-link] |
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355. |
| Temperature-dependent dielectric and electro-optic properties of a ZnO-BaTiO3-ZnO heterostructure grown by pulsed-laser deposition
B. N. Mbenkum, N. Ashkenov, M. Schubert, M. Lorenz, H. Hochmuth, D. Michel, M. Grundmann, and G. Wagner
Appl. Phys. Lett. 86, 091904 (2005) [View PDF (130 kB)] [DOI-link] |
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354. |
| Structural characteristics and lattice parameters of hydride vapor phase epitaxial GaN free-standing quasisubstrates
V. Darakchieva, T. Paskova, P. P. Paskov, B. Monemar, N. Ashkenov, and M. Schubert
J. Appl. Phys. 97, 013517 (2005) [View PDF (98 kB)] [DOI-link] |
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353. |
| Long-wavelength interface modes in semiconductor layer structures
M. Schubert, T. Hofmann, and J. Sik
Phys. Rev. B 71, 035324 (2005) [View PDF (382 kB)] [DOI-link] |
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352. |
| The inertial-mass scale for free-charge-carriers in semiconductor heterostructures
T. Hofmann, M. Schubert, C. von Middendorff, G. Leibiger, V. Gottschalch, C. M. Herzinger, A. Lindsay, and E. O'Reilly
AIP Conference Proceedings 772, 455-456 (2005) [DOI-link] |
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351. |
| Electro-optic Raman observation of low temperature phase transitions in ZnO-BaTiO3-ZnO heterostructures
B. N. Mbenkum, N. Ashkenov, M. Schubert, and M. Lorenz
AIP Conf. Proc. 772, 401-402 (2005) [DOI-link] |
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350. |
| Combined Raman scattering, X-ray fluorescence and ellipsometry in-situ growth monitoring of CuInSe2-based photoabsorber layers on polyimide substrates
C. Bundesmann, M. Schubert, N. Ashkenov, M. Grundmann, G. Lippold, and J. Piltz
AIP Conf. Proc. 772, 165 (2005) [View PDF (594 kB)] [DOI-link] |
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349. |
| Band-to-band transitions and optical properties of MgxZn1-xO (0 < x < 1) films
R. Schmidt-Grund, D. Fritsch, M. Schubert, B. Rheinländer, H. Schmidt, H. Hochmuth, M. Lorenz, C.M. Herzinger, and M. Grundmann
AIP Conf. Proc. 772, 201 (2005) [View PDF (45 kB)] [DOI-link] |
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348. |
 | Lichtstarke kompakte in-situ Ramansonde
M. Schubert, C. Bundesmann, and G. Lippold
Patent application , DE 10 2004 006 391 A1 (2005) [View PDF (165 kB)] |
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2004: |
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347. |
| High pressure annealing of HVPE GaN free-standing films: redistribution of defects and stress
T. Paskova, T. Suski, M. Bockowski, P.P. Paskov, V. Darakchieva, B. Monemar, F. Tuomisto, K. Saarinen, N. Ashkenov, M. Schubert, C. Roder, and D. Hommel
Mat. Res. Soc. Symp. Proc. 831, E8.18.1 (2004) [View PDF (273 kB)] [DOI-link] |
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346. |
 | Infrared Ellipsometry and Raman Studies of hexagonal InN films: correlation between strain and vibrational properties
V. Darakchieva, P. Paskov, E. Valcheva, T. Paskova, M. Schubert, C. Bundesmann, H. Lu, W. J. Schaff, and B. Monemar
Superlattices and Microstructures 36, 573-580 (2004) [View PDF (331 kB)] [DOI-link] |
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345. |
| Micro-Raman scattering profiling studies on HVPE-grown free-standing GaN
A. Kasic, D. Gogova, H. Larsson, C. Hemmingsson, I. Ivanov, B. Monemar, C. Bundesmann, and M. Schubert
phys. stat. sol. (a) 201, 2773-2776 (2004) [View PDF (123 kB)] |
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344. |
| Infrared dielectric function and phonon modes of Mg-rich cubic MgxZn1-xO (x > 0.67) thin films on sapphire [0001]
C. Bundesmann, M. Schubert, D. Spemann, A. Rahm, H. Hochmuth, M. Lorenz, and M. Grundmann
Appl. Phys. Lett. 85, 905 (2004) [View PDF (74 kB)] [DOI-link] |
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343. |
| Strain related structural and vibrational properties of thin epitaxial AlN layers
V. Darakchieva, J. Birch, M. Schubert, T. Paskova , S. Tungasmita, G. Wagner, A. Kasica, and B. Monemar
Phys. Rev. B 70, 045411 (2004) [View PDF (359 kB)] [DOI-link] |
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342. |
| Near-band-gap dielectric function of Zn1-xMnxSe thin films determined by spectroscopic ellipsometry
J. Kvietkova, B. Daniel, M. Hetterich, M. Schubert, D. Spemann, D. Litvinov, and D. Gerthsen
Phys. Rev. B 70, 045316 (2004) [DOI-link] |
|
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341. |
| Deformation potentials of the E1(TO) and E2 modes of InN
V. Darakchieva, P. P. Paskov, E. Valcheva, T. Paskova, B. Monemar, M. Schubert, H. Lu, and W. J. Schaff
Appl. Phys. Lett. 84, 3636 (2004) [View PDF (57 kB)] [DOI-link] |
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340. |
 | Optical modelling of a layered photovoltaic device with a polyfluorene-copolymer as the active layer
Nils-Krister Persson, M. Schubert, and O. Inganäs
Solar Energy Materials and Solar Cells 83, 169-186 (2004) [View PDF (612 kB)] [DOI-link] |
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339. |
| Optical properties of Zn1-xMnxSe epilayers determined by spectroscopic ellipsometry
J. Kvietkova, B. Daniel, M. Hetterich, M. Schubert, D. Spemann, P. Pfundstein, and D. Gerthsen
Thin Solid Films 455-456, 228-230 (2004) [View PDF (133 kB)] [DOI-link] |
|
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338. |
| Infrared to Vacuum Ultraviolet Optical Properties of 3C, 4H and 6H Silicon Carbide Measured by Spectroscopic Ellipsometry
O. P. A. Lindquist, M. Schubert, H. Arwin, and K. Järrendahl
Thin Solid Films 455-456, 235-238 (2004) [View PDF (116 kB)] [DOI-link] |
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337. |
| Protein adsorption in porous silicon gradients monitored by spatially-resolved spectroscopic ellipsometry
L. M. Karlsson, M. Schubert, N. Ashkenov, and H. Arwin
Thin Solid Films 455-456, 726-730 (2004) [View PDF (386 kB)] [DOI-link] |
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336. |
| Hydrogen implantation in InGaNAs studied by spectroscopic ellipsometry
G. Leibiger, V. Gottschalch, N. Razek, A. Schindler, and M. Schubert
Thin Solid Films 455-456, 231-234 (2004) [View PDF (106 kB)] [DOI-link] |
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335. |
| UV-VUV Spectroscopic ellipsometry of ternary MgxZn1-xO (x<0.53) thin films
R. Schmidt-Grund, M. Schubert, B. Rheinländer, D. Fritsch, H. Schmidt, E. M. Kaidashev, M. Lorenz, C. M. Herzinger, and M. Grundmann
Thin Solid Films 455-456, 500-504 (2004) [View PDF (259 kB)] |
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334. |
| Far-Infrared Dielectric Function and Phonon Modes of Sponateously Ordered (AlxGa1-x)0.52In0.48P
T. Hofmann, M. Schubert, and V. Gottschalch
Thin Solid Films 455-456, 601-604 (2004) [View PDF (154 kB)] [DOI-link] |
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333. |
| Generalized ellipsometry for orthorhombic, absorbing materials: Dielectric functions, phonon modes, and band-to-band transitions of Sb2S3
M. Schubert, T. Hofmann, C. M. Herzinger, and W. Dollase
Thin Solid Films 455-456, 619-623 (2004) [View PDF (282 kB)] [DOI-link] |
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332. |
| Infrared dielectric functions and crystal orientation of a-plane ZnO thin films on r-plane sapphire determined by generalized ellipsometry
C. Bundesmann, N. Ashkenov, M. Schubert, A. Rahm, H. v. Wenckstern, E. M. Kaidashev, M. Lorenz, and M. Grundmann
Thin Solid Films 455-456, 161-166 (2004) [View PDF (158 kB)] [DOI-link] |
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331. |
| Infrared ellipsometry characterization of conducting thin organic films
M. Schubert, C. Bundesmann, G. Jakopic, H. Maresch, H. Arwin, N.-C. Persson, F. Zhang, and O. Inganäs
Thin Solid Films 455-456, 295-300 (2004) [View PDF (136 kB)] [DOI-link] |
|
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330. |
| Far-infrared magnetooptic generalized ellipsometry: determination of free-charge-carrier parameters in semiconductor thin film structures
M. Schubert, T. Hofmann, and C. M. Herzinger
Thin Solid Films 455-456, 563-570 (2004) [View PDF (239 kB)] [DOI-link] |
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329. |
 | Optical and structural characteristics of virtually unstrained bulk-like GaN
D. Gogova, A. Kasic, H. Larsson, B. Pécz, R. Yakimova, B. Magnusson, B. Monemar, F. Tuomisto, K. Saarinen, C. R. Miskys, M. Stutzmann, C. Bundesmann, and M. Schubert
Jpn. J. Appl. Phys. 43, 1264 (2004) [DOI-link] |
|
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328. |
| Carrier redistribution in organic/inorganic (poly(3,4-ethylenedioxy
thiophene/poly(styrenesulfonate)polymer)-Si) heterojunction
determined from infrared ellipsometry
M. Schubert, C. Bundesmann, H. v. Wenckstern, G. Jakopic, A. Haase, N.-K. Persson, F. Zhang, H. Arwin, and O. Inganäs
Appl. Phys. Lett. 84, 1311-1313 (2004) [View PDF (63 kB)] |
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327. |
 | Strain evolution and phonons in AlN/GaN superlattices
V. Darakchieva, P. P. Paskov, M. Schubert, E. Valcheva, T. Paskova, H. Arwin, B. Monemar, H. Amano, and I. Akasaki
Mat. Res. Soc. Symp. 798, Y5.60 (2004) [DOI-link] |
|
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326. |
 | Electro-optical properties of ZnO-BaTiO3-ZnO heterostructures grown by pulsed laser deposition
M. Schubert, N. Ashkenov, T. Hofmann, H. Hochmuth, M. Lorenz, M. Grundmann, and G. Wagner
Ann. Phys. 13, 61-62 (2004) [View PDF (213 kB)] [DOI-link] |
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325. |
| Infrared dielectric function and vibrational modes of pentacene thin films
M. Schubert, C. Bundesmann, G. Jakopic, and H. Arwin
Appl. Phys. Lett. 84, 200-202 (2004) [View PDF (54 kB)] |
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2003: |
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324. |
| Metalorganic chemical vapor phase epitaxy of gallium-nitride on silicon
A. Dadgar, A. Strittmatter, J. Bläsing, M. Poschenrieder, O. Contreras, P. Veit, T. Riemann, F. Bertram, A. Reiher, A. Krtschil, A. Diez, T. Hempel, T. Finger, A. Kasic, M. Schubert, D. Bimberg, F. A. Ponce, J. Christen, and A. Krost
phys. stat. sol. (c) 0, 1583-1606 (2003) [View PDF (3.1 MB)] |
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323. |
| Phonons and free-carrier properties of binary, ternary, and quaternary group-III nitride layers measured by Infrared Spectroscopic Ellipsometry
A. Kasic, M. Schubert, J. Off, B. Kuhn, F. Scholz, S. Einfeldt, T. Böttcher, D. Hommel, D. J. As, U. Köhler, A. Dadgar, A. Krost, Y. Saito, Y. Nanishi, M. R. Correia, S. Pereira, V. Darakchieva, B. Monemar, H. Amano, I. Akasaki, and G. Wagner
phys. stat. sol. (c) 0, 1750 (2003) [View PDF (1.3 MB)] |
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322. |
| Phonons and polaritons in semiconductor layer structures
M. Schubert , and T. Hofmann
SPIE Vol. 5218, 210-222 (2003) [DOI-link] |
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321. |
 | Generalized infrared ellipsometry study of thin epitaxial AlN layers with complex strain behavior
V. Darakchieva, M. Schubert, J. Birch, A. Kasic, S. Tungasmita, T. Paskova, and B. Monemar
Physica B 340-342, 416 (2003) [View PDF (568 kB)] |
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320. |
| Optical properties of undoped AlN/GaN superlattices grown by metal orgaic vapor phase epitaxy
V. Darakchieva, P. P. Paskov, M. Schubert, T. Paskova, B. Monemar, S. Kamiyama, M. Iwaya, H. Amano, and I. Akasaki
phys. stat. sol. c 0, 2614–2617 (2003) [View PDF (191 kB)] [DOI-link] |
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319. |
| Raman scattering in ZnO thin films doped with Fe, Sb, Ga and Li
C. Bundesmann, N. Ashkenov, M. Schubert, D. Spemann, T. Butz, M. Lorenz, E. M. Kaidashev, and M. Grundmann
Appl. Phys. Lett. 83, 1974-1976 (2003) [View PDF (59 kB)] |
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318. |
| Interband transitions and phonon modes in GaBxAs1-x (0 <= x < 0.33) and GaNxAs1-x (0 <= x < 0.29)
G. Leibiger, V. Gottschalch, V. Riede, M. Schubert, J. N. Hilfiker, and T. E. Tiwald
Phys. Rev. B 67, 195205 (2003) [View PDF (120 kB)] [DOI-link] |
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317. |
 | Optical properties of ternary MgZnO thin films
R. Schmidt, C. Bundesmann, N. Ashkenov, B. Rheinländer, M. Schubert, M. Lorenz, E. M. Kaidashev, D. Spemann, T. Butz, J. Lenzner, and M. Grundmann
IoP Conf. Series 171, P11 (2003) [View PDF (291 kB)] |
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316. |
| Far-infrared magnetooptical generalized ellipsometry determination of free-carrier parameters in semiconductor thin film structures
T. Hofmann, M. Grundmann, C. M. Herzinger, M. Schubert, and W. Grill
Mat. Res. Soc. Symp. Proc. 744, M5.32.1-6 (2003) [View PDF (154 kB)] |
|
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315. |
| Far-Infrared dielectric function and phonon modes of spontaneously ordered (AlxGa1-x)0.52In0.48P
T. Hofmann, V. Gottschalch, and M. Schubert
Mat. Res. Soc. Symp. Proc. 744, M5.33.1-6 (2003) [View PDF (129 kB)] |
|
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314. |
| Far-infrared-magneto-optic Ellipsometry characterization of free-charge-carrier properties in highly disordered n-type Al0.19Ga0.33In0.48P
T. Hofmann, M. Schubert, C. M. Herzinger, and I. Pietzonka
Appl. Phys. Lett. 82, 3463-3465 (2003) [View PDF (55 kB)] [DOI-link] |
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313. |
| Residual strain in HVPE GaN free-standing and re-grown homoepitaxial layers
V. Darakchieva, T. Paskova, P.P. Paskov, B. Monemar, N. Ashkenov, and M. Schubert
phys. stat. sol. (a) 195, 516-522 (2003) [View PDF (484 kB)] |
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312. |
| Dielectric functions (1 to 5 eV) of wurtzite MgxZn1-xO (x<0.29) thin films
R. Schmidt, B. Rheinländer, M. Schubert, D. Spemann, T. Butz, J. Lenzner, E. M. Kaidashev, M. Lorenz, A. Rahm, H. C. Semmelhack, and M. Grundmann
Appl. Phys. Lett. 82, 2260-2262 (2003) [View PDF (75 kB)] |
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311. |
| Infrared dielectric functions and phonon modes of high-quality ZnO films
N. Ashkenov, B. N. Mbenkum, C. Bundesmann, V. Riede, M. Lorenz, E. M. Kaidashev, A. Kasic, M. Schubert, M. Grundmann, G. Wagner, and H. Neumann
J. Appl. Phys. 93, 126 (2003) [View PDF (189 kB)] |
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310. |
| Generalized far-infrared magneto-optic ellipsometry for semiconductor layer structures: Determination of free-carrier effective mass, mobility and concentration parameters in n-type GaAs
M. Schubert, T. Hofmann, and C. M. Herzinger
J. Opt. Soc. Am. A 20, 347-356 (2003) [View PDF (257 kB)] [DOI-link] |
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2002: |
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309. |
| Optical phonons in hexagonal AlxInyGa1-x-yN (y ~ 0.12)
A. Kasic, M. Schubert, J. Off, F. Scholz, S. Einfeldt, and D. Hommel
phys. stat. sol. (b) 234, 970 (2002) [View PDF (239 kB)] |
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308. |
| Far-Infrared dielectric anisotropy and phonon modes in spontaneously CuPt-ordered Ga0.52In0.48P
T. Hofmann, V. Gottschalch, and M. Schubert
Phys. Rev. B 66, 195204 1-10 (2002) [View PDF (255 kB)] [DOI-link] |
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307. |
 | Generalized ellipsometry for biaxial absorbing materials: determination of crystal orientation and optical constants of Sb2S3
M. Schubert, and W. Dollase
Opt. Lett. 27, 2073 - 2075 (2002) [View PDF (115 kB)] |
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306. |
| Infrared dielectric functions and phonon modes of wurtzite MgxZn1-xO (x <= 0.2)
C. Bundesmann, M. Schubert, D. Spemann, T. Butz, M. Lorenz, E. M. Kaidashev, M. Grundmann, N. Ashkenov, H. Neumann, and G. Wagner
Appl. Phys. Lett. 81, 2376 - 2378 (2002) [View PDF (142 kB)] |
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305. |
| Far-infrared Magneto-Optical Generalized Ellipsometry determination of free-carrier parameters in semiconductor thin film structures
T. Hofmann, M. Schubert, and C. M. Herzinger
SPIE Vol. 4779, 90-97 (2002) [DOI-link] |
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304. |
| Evolution of the optical properties of III-V Nitride alloys: Band-to-Band transitions in GaPN
G. Leibiger, M. Schubert, V. Gottschalch, G. Benndorf, and R. Schwabe
Phys. Rev. B 65, 245207 1-6 (2002) [View PDF (98 kB)] [DOI-link] |
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303. |
| Generalized ellipsometry of complex mediums in layered systems
M. Schubert, A. Kasic, T. Hofmann, V. Gottschalch, J. Off, F. Scholz, E. Schubert, H. Neumann, I. Hodgkinson, M. Arnold, W. Dollase, and C. M. Herzinger
SPIE Vol. 4806, 264 (2002) [View PDF (608 kB)] [DOI-link] |
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302. |
| Optical phonon modes and interband transitions in cubic AlxGa1-xN films
A. Kasic, M. Schubert, T. Frey, U. Köhler, D. J. As, and C. M. Herzinger
Phys. Rev. B 65, 184302 (2002) [View PDF (210 kB)] [DOI-link] |
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301. |
 | Low-orbit-environment protective coating for all-solid-state electrochromic surface heat radiation control devices
E. Franke, H. Neumann, M. Schubert, C. L. Trimble, and J. A. Woollam
Surf. Coat. Techn. 151-152, 285 - 288 (2002) [View PDF (141 kB)] [DOI-link] |
|
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300. |
 | Infrared spectroscopic ellipsometry - a new tool for characterization of semiconductor heterostructures
A. Kasic, M. Schubert, S. Einfeldt, and D. Hommel
Vib. Spectrosc. 29, 121 (2002) [View PDF (100 kB)] [DOI-link] |
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299. |
| Effective electron mass and phonon modes in n-type hexagonal InN
A. Kasic, M. Schubert, Y. Saito, Y. Nanishi, and G. Wagner
Phys. Rev. B 65, 115206 (2002) [View PDF (156 kB)] [DOI-link] |
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298. |
 | Interband transitions in [001]-(GaP)1(InP)m superlattices
M. Schubert, H. Schmi dt, J. \vSik, T. Hofmann, V. Gottschalch, W. Grill, G. Böhm, and G. Wagner
Mat. Sci. Eng. B 88, 125 - 128 (2002) [View PDF (144 kB)] [DOI-link] |
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2001: |
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297. |
| Phonon modes of GaP1-yNy measured by mid-infrared spectroscopic ellipsometry
G. Leibiger, V. Gottschalch, A. Kasic, and M. Schubert
Appl. Phys. Lett. 79, 3407 (2001) [View PDF (60 kB)] |
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296. |
| Optical functions, phonon properties, and composition of InGaAsN single layers derived from far - and near - infrared spectroscopic ellipsometry
G. Leibiger, V. Gottschalch, and M. Schubert
J. Appl. Phys 90, 5951 - 5958 (2001) [View PDF (127 kB)] |
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295. |
| Ellipsometry on anisotropic materials: Bragg conditions and phonons in dielectric helical thin films
M. Schubert, and C. M. Herzinger
phys. stat. sol. (a) 188, 1563 - 1575 (2001) [View PDF (365 kB)] |
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294. |
| Phonon modes and critical points of GaNP
G. Leibiger, V. Gottschalch, G. Benndorf, R. Schwabe, and M. Schubert
phys. stat. sol. (a) 228, 279 - 282 (2001) [View PDF (79 kB)] |
|
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293. |
| Phonon modes of InGaAsN measured by far infrared spectroscopic ellipsometry
G. Leibiger, V. Gottschalch, and M. Schubert
phys. stat. sol. (a) 228, 259 - 262 (2001) [View PDF (88 kB)] |
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292. |
| Infrared Ellipsometry- a novel tool for characterization of group-III-Nitride Heterostructrues for optoelectronic device applications
M. Schubert, A. Kasic, S. Einfeldt, D. Hommel, U. Köhler, D. J. As, J. Off, B. Kuhn, F. Scholz, and J. A. Woollam
phys. stat. sol. (a) 228, 437 (2001) [View PDF (462 kB)] |
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291. |
| Infrared Spectroscopic Ellipsometry for nondestructive characterization of free-carrier and crystal-structure properties of group-III-nitride semiconductor device heterostructures
M. Schubert, A. Kasic, S. Figge, M. Diesselberg, S. Einfeldt, D. Hommel, U. Köhler, D. J. As, J. Off, B. Kuhn, F. Scholz, J. A. Woollam, and C. M. Herzinger
SPIE Vol. 4449, -8 (2001) [View PDF (901 kB)] |
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290. |
| Infrared dielectric function and phonon modes of highly disordered (AlxGa1-x)0.52In0.48P
T. Hofmann, G. Leibiger, V. Gottschalch, Ines Pietzonka, and M. Schubert
Phys. Rev. B 64, 155206 (2001) [View PDF (297 kB)] [DOI-link] |
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289. |
| Disorder-activated infrared modes and surface depletion layer in highly Si-doped hexagonal GaN
A. Kasic, M. Schubert, B. Kuhn, F. Scholz, S. Einfeldt, and D. Hommel
J. Appl. Phys. 87, 3720 (2001) [View PDF (85 kB)] |
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288. |
 | Infrared Ellipsometry characterization of porous silicon Bragg reflectors
S. Zangooie, M. Schubert, C. Trimble, D. W. Thompson, and J. A. Woollam
Appl. Opt. 40, 906-912 (2001) [View PDF (302 kB)] [DOI-link] |
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287. |
| Optical properties of amorphous and crystalline tantalum oxide thin films measured by IR-VIS-VUV (0.03eV-8.5eV) spectroscopic ellipsometry
E. Franke, M. Schubert, C.L. Trimble, and J.A. Woollam
Thin Solid Films 388, 283-289 (2001) [View PDF (201 kB)] [DOI-link] |
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286. |
| Band-gap energies, optical constants, phonons and free carrier properties in GaNAs/InAs/GaAs superlattice heterostructures measured by spectroscopic ellipsometry
J. Sik, M. Schubert, G. Leibiger, and V. Gottschalch
J. Appl. Phys. 89, 294-305 (2001) [View PDF (321 kB)] |
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285. |
| Anisotropic dielectric function spectra from single crystal CuInSe2with orientation domains
A. Kreuter, K. Otte, G. Lippold, G. Wagner, A. Schindler, and M. Schubert
Appl. Phys. Lett. 78, 195-197 (2001) [View PDF (109 kB)] |
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284. |
| IR-VUV Dielectric Function of Al1-xInxN determined by spectroscopic ellipsometry
A. Kasic, M. Schubert, B. Rheinländer, J. Off, F. Scholz, and C. M. Herzinger
Mat. Res. Soc. Symp. 639, G6.13 (2001) [View PDF (106 kB)] |
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283. |
| Optical Constants, Critical Points, and Phonon Modes of GaAsN Single Layers
G. Leibiger, V. Gottschalch, A. Kasic, B. Rheinländer, J. Sik, and M. Schubert
Mat. Res. Soc. Symp. 639, G6.35 (2001) [View PDF (162 kB)] |
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282. |
| Strain and composition dependence of the E1(TO) mode in hexagonal AlxIn1-xN thin films
A. Kasic, M. Schubert, J. Off, and F. Scholz
Appl. Phys. Lett. 78, 1526 (2001) [View PDF (61 kB)] |
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281. |
| Model dielectric function spectra of GaAsN for far-infrared and near-infrared to ultra violet wavelengths
G. Leibiger, V. Gottschalch, B. Rheinländer, J. Sik, and M. Schubert
J. Appl. Phys. 89, 4927-4938 (2001) [View PDF (194 kB)] |
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280. |
 | Infrared optical properties of aged porous GaAs
S. Zangooie, T. E. Tiwald, M. Schubert, and J. A. Woollam
J. Mat. Res. 16, 1241-1244 (2001) [View PDF (84 kB)] [DOI-link] |
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279. |
| Infrared response of multiple-component free-carrier plasma in heavily doped p-type GaAs
S. Zangooie, M. Schubert, D.W. Thompson, and J.A. Woollam
Appl. Phys. Lett. 78, 937 (2001) [View PDF (58 kB)] |
|
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278. |
| Phonons and free carriers in strained hexagonal GaN/AlGaN superlattices measured by Infrared ellipsometry and Raman spectroscopy
M. Schubert, A. Kasic, J. Sik, S. Einfeldt, D. Hommel, V. Haerle, J. Off, and F. Scholz
Mat. Sci. Eng. B 82, 178 (2001) [View PDF (204 kB)] |
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277. |
| Effective carrier mass and mobility versus carrier concentration in p- and n-type α-GaN determined by infrared ellipsometry and Hall resistivity measurements
A. Kasic, M. Schubert, B. Rheinländer, V. Riede, S. Einfeldt, D. Hommel, B. Kuhn, J. Off, and F. Scholz
Mat. Sci. Eng. B 82, 74 (2001) [View PDF (79 kB)] |
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2000: |
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276. |
 | Optical constants, critical points, free carrier effects, and phonon modes of GaAsN single layers and GaAsN/InAs/GaAs superlattices
G. Leibiger, V. Gottschalch, B. Rheinländer, A. Kasic, M. Schubert, and J. Sik
IEEE International Symposium on Compound Semiconductors , 7-12 (2000) [View PDF (317 kB)] [DOI-link] |
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275. |
| Optical properties of AlxIn1-xN thin films determined by spectroscopic ellipsometry
A. Kasic, M. Schubert, B. Rheinländer, J. Off, F. Scholz, and C. M. Herzinger
IEEE International Symposium on Compound Semiconductors , 513-518 (2000) [View PDF (367 kB)] [DOI-link] |
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274. |
| Measurement of rutile TiO2 dielectric tensor from 0.148 to 33 \mum using generalized ellipsometry
T. E. Tiwald, and M. Schubert
SPIE Vol. 4103, 19-29 (2000) [View PDF (677 kB)] |
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273. |
 | Optical properties of GaAs1-yNy
G. Leibiger, B. Rheinländer, V. Gottschalch, M. Schubert, J. Sik, and G. Lippold
Advanced Semiconductor Devices and Microsystems ISBN 0-7803-5939-9, 171-174 (2000) [DOI-link] |
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272. |
| Infrared switching electrochromic devices based on tungsten oxide
E. Franke, C.L. Trimble, J.S. Hale, M. Schubert, and J.A. Woollam
J. Appl. Phys. 88, 5777-5784 (2000) [View PDF (126 kB)] |
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271. |
| Dielectric function of amorphous tantalum oxide from the far infrared to the deep ultraviolet spectral region measured by spectroscopic ellipsometry
E. Franke, M. Schubert, C.L. Trimble, M.J. DeVries, J.A. Woollam, and F. Frost
J. Appl. Phys. 88, 5166-5174 (2000) [View PDF (255 kB)] |
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270. |
| Nitrogen dependence of the GaAsN interband critical points E1 and E1 + Δ1 determined by spectroscopic ellipsomety
G. Leibiger, V. Gottschalch, B. Rheinländer, J. Sik, and M. Schubert
Appl. Phys. Lett. 77, 1650-1652 (2000) [View PDF (62 kB)] |
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269. |
| All-Solid state electrochromic device for emittance modulation in the infrared spectral region
E. Franke, C.L. Trimble, J.S. Hale, M. Schubert, and J. A. Woollam
Appl. Phys. Lett. 77, 930-932 (2000) [View PDF (46 kB)] |
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268. |
| Near-band-gap optical functions spectra and band-gap energies of GaNAs/GaAs superlattice heterostructures measured by spectroscopic ellipsometry
J. Sik, M. Schubert, G. Leibiger, G. Kirpal, V. Gottschalch, and J. Humli\vcek
Appl. Phys. Lett. 76, 2859-2861 (2000) [View PDF (121 kB)] |
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267. |
 | Free-carrier effects and optical phonons in GaNAs/GaAs superlattice heterostructures measured by infrared spectroscopic ellipsometry
J. \v Sik, M. Schubert, T. Hofmann, and V. Gottschalch
MRS Internet J. Nitride Semicond. Res. 5, 3 (2000) |
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266. |
| Phonons and free carriers in a strained hexagonal GaN-AlN superlattice measured by Infrared Ellipsometry and Raman spectroscopy
M. Schubert, A. Kasic, T.E. Tiwald, J.A. Woollam, V. Härle, and F. Scholz
MRS Internet J. Nitride Semicond. Res. 5S1, W11.39 (2000) [View PDF (108 kB)] |
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265. |
| Free-carrier and phonon properties of n- and p-type hexagonal GaN films measured by infrared ellipsometry
A. Kasic, M. Schubert, S. Einfeldt, D. Hommel, and T. E. Tiwald
Phys. Rev. B 62, 7365 (2000) [View PDF (187 kB)] [DOI-link] |
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264. |
| In-situ ellipsometry growth characterization of dual ion beam deposited boron nitride thin films
E. Franke, M. Schubert, J. A. Woollam, J.-D. Hecht, H. Neumann, G. Wagner, and F. Bigl
J. Appl. Phys. 87, 2593-2599 (2000) [View PDF (632 kB)] |
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263. |
| Infrared dielectric anisotropy and phonon modes of sapphire
M. Schubert, Tiwald, T. E., and Herzinger, C. M.
Phys. Rev. B 61, 8187-8201 (2000) [View PDF (294 kB)] [DOI-link] |
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1999: |
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262. |
| Optical phonons and free-carrier effects in MOVPE grown AlxGa1-xN measured by infrared ellipsometry
M. Schubert, A. Kasic, T. E. Tiwald, J. Off, B. Kuhn, and F. Scholz
MRS Internet J. Nitride Semicond. Res. 4, 11 (1999) [View PDF (309 kB)] |
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261. |
| Isotropic dielectric functions of highly disordered AlxGa1-xInP (0 < x < 1) lattice matched to GaAs
M. Schubert, Woollam, J. A., Leibiger, G., Rheinländer, B., Pietzonka, I., Saß, T., and Gottschalch, V.
J. Appl. Phys. 86, 2025-2033 (1999) [View PDF (146 kB)] |
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260. |
| Free-carrier response and lattice modes of group III-nitride heterostructures measured by infrared ellipsometry
M. Schubert, J. A. Woollam, A. Kasic, B. Rheinländer, J. Off, B. Kuhn, and F. Scholz
phys. stat. sol. (b) 216, 655 (1999) [View PDF (175 kB)] |
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259. |
| Near-band-gap CuPt order birefringence in Al0.48Ga0.52InP2
M. Schubert, T. Hofmann, B. Rheinländer, I. Pietzonka, T. Saß, V. Gottschalch, and J. A. Woollam
Phys. Rev. B 60, 16618 - 16634 (1999) [View PDF (337 kB)] [DOI-link] |
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258. |
| Explicit solutions for the optical properties of arbitrary magneto-optic materials in generalized ellipsometry
M. Schubert, T.E. Tiwald, and J.A. Woollam
Appl. Opt. 38, 177-187 (1999) [View PDF (1.6 MB)] [DOI-link] |
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1998: |
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257. |
 | Spectroscopic ellipsometry: Application to complex optoelectronic layer systems
B. Rheinländer, M. Schubert, and H. Schmidt
Heterostructure Epitaxy and Devices ISBN 978-0-7923-5012-5, 151-154 (1998) |
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256. |
| In-situ infrared and visible-light ellipsometric investigations of boron nitride thin films at elevated temperatures
E. Franke, M. Schubert, J.-D. Hecht, H. Neumann, T. E. Tiwald, H. Yao, J. A. Woollam, and J. Hahn
J. Appl. Phys. 84, 526-532 (1998) [View PDF (158 kB)] |
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255. |
| Birefringence and reflectivity of single crystal CdAl2Se4 by generalized ellipsometry
J.-D. Hecht, A. Eifler, V. Riede, M. Schubert, G. Krauß, and V. Krämer
Phys. Rev. B 57, 7037-7042 (1998) [View PDF (159 kB)] [DOI-link] |
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254. |
| Optical investigations of mixed-phase boron nitride thin films by infrared spectroscopic ellipsometry
M. Schubert, E. Franke, H. Neumann, T. E. Tiwald, D. Thompson, J. A. Woollam, and J. Hahn
Thin Solid Films 313-314, 692-696 (1998) [View PDF (246 kB)] [DOI-link] |
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253. |
| Generalized ellipsometry and complex optical systems
M. Schubert
Thin Solid Films 313-314, 323-332 (1998) [View PDF (282 kB)] [DOI-link] |
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1997: |
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252. |
| Phase and Microstructure investigations of boron nitride thin films by spectroscopic ellipsometry in the visible and infrared spectral range
E. Franke, M. Schubert, H. Neumann, T.E. Tiwald, D. Thompson, J.A. Woollam, J. Hahn, and F. Richter
J. Appl. Phys. 82, 2906-2911 (1997) [View PDF (154 kB)] |
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251. |
| Infrared optical properties of mixed-phase thin films studied by spectroscopic ellipsometry and boron nitride as an example
M. Schubert, B. Rheinländer, E. Franke, H. Neumann, T.E. Tiwald, J.A. Woollam, J. Hahn, and F. Richter
Phys. Rev. B 56, 13306-13313 (1997) [View PDF (209 kB)] |
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250. |
| Infrared-ellipsometry on hexagonal and cubic boron nitride thin films
E. Franke, H. Neumann, M. Schubert, T.E. Tiwald, J.A. Woollam, and J. Hahn
Appl. Phys. Lett. 70, 1668-1670 (1997) [View PDF (101 kB)] |
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249. |
| Anisotropy of boron nitride thin-film reflectivity spectra by generalized ellipsometry
M. Schubert, B. Rheinländer, E. Franke, H. Neumann, J. Hahn, M. Röder, and F. Richter
Appl. Phys. Lett. 70, 1819-1821 (1997) [View PDF (122 kB)] |
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248. |
| Application of generalized ellipsometry to complex optical systems
M. Schubert, B. Rheinländer, B. Johs, and J. A. Woollam
SPIE Vol. 3094, 255-265 (1997) |
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1996: |
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247. |
| Direct-gap reduction and valence-band splitting of ordered indirect-gap AlInP2 studied by dark-field spectroscopy
M. Schubert, B. Rheinländer, E. Franke, I. Pietzonka, J. \vSkriniarova, and V. Gottschalch
Phys. Rev. B 54, 17616-17619 (1996) [View PDF (147 kB)] [DOI-link] |
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246. |
 | Optical properties of microconfined liquid crystals
C. Cramer, H. Binder, M. Schubert, B. Rheinländer, and H. Schmiedel
Molecular Crystals and Liquid Crystals 282, 395-405 (1996) [DOI-link] |
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245. |
| Generalized Transmission Ellipsometry for twisted biaxial dielectric media: Application to chiral liquid crystals
M. Schubert, B. Rheinländer, C. Cramer, H. Schmiedel, B. Johs, C. M. Herzinger, and J.A.Woollam
J. Opt. Soc. Am. A 13, 1930-1940 (1996) [View PDF (2.5 MB)] [DOI-link] |
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244. |
| Extension of rotating-analyzer ellipsometry to generalized ellipsometry: determination of the dielectric function tensor from uniaxial TiO2
M. Schubert, B. Rheinländer, J.A. Woollam, B. Johs, and C.M. Herzinger
J. Opt. Soc. Am. A 13, 875-883 (1996) [View PDF (1.3 MB)] [DOI-link] |
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243. |
| Polarization-dependent optical parameters of arbitarily anisotropic homogeneous layered systems
M. Schubert
Phys. Rev. B 53, 4265-4274 (1996) [View PDF (187 kB)] [DOI-link] |
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1995: |
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242. |
| Dark-field-spectroscopy on spontaneously ordered GaInP2
B. Rheinländer, M. Schubert, and V. Gottschalch
phys. stat. sol. (a) 152, 287-292 (1995) [DOI-link] |
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241. |
 | Band-gap reduction and valence band splitting in spontaneously ordered GaInP2 studied by Dark-field-spectroscopy
M. Schubert, B. Rheinländer, and V. Gottschalch
Solid State Commun. 95, 723-726 (1995) [View PDF (515 kB)] [DOI-link] |
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240. |
| Optical constants of GaxIn1-xP lattice matched to GaAs
M. Schubert, V. Gottschalch, C. M. Herzinger, H. Yao, P. G. Snyder, and J. A. Woollam
J. Appl. Phys. 77, 3416-3419 (1995) [View PDF (850 kB)] [DOI-link] |
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h-index |
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M. Schubert's scientific output parameter h according to Hirsch
based on ISI (20.09.2005; Defined as the number of papers with citation number higher or equal to h.): 18
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generated using Sembib V0.1 © T. Hofmann (2003)
last database entry from 2025-08-14 |
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