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   Home > People > Schubert
Prof. Dr. Mathias Schubert
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Projects


Title

Optical measurement tools for automation of PVD deposition systems

Sponsor Roth und Rau AG, Hohenstein-Ernstthal, Germany (SME)
Grant
PI M. Schubert
Mueller Matrix ellipsometry analysis and control of incoherent film structures
Duration 01.03.2005 - 31.12.2005

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Title

Industrial in-situ Raman scattering tool

Sponsor Solarion GmbH, Leipzig, Germany (SME)
Grant
PI M. Schubert
Development of an interface for real-time analysis of composition and growth parameters fromo in-situ Raman measurement systems
Duration 01.04.2005 - 31.07.2005

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Title

Development of Raman tools for industrial in-line applications

Sponsor Chamber of Industry and Commerce of the City Leipzig and University Leipzig, Leipzig, Germany
Grant
PI M. Schubert
Duration 01.01.2005 - 30.06.2005

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Title

Electrical and optical properties of transparent conductive oxides

Sponsor von Ardenne Anlagenbau GmbH, Dresden, Germany (SME)
Grant
PI M. Schubert
Duration 01.10.2004 - 31.12.2004

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Title

Functional optical thin films II

Sponsor Flabeg GmbH & Co. KG, Furth im Wald, Germany (SME)
Grant
PI M. Schubert
Duration 01.08.2004 - 31.07.2005

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Title

Parallel in-line design for optical PVD process control

Sponsor von Ardenne Anlagenbau GmbH, Dresden, Germany (SME)
Grant
PI M. Schubert
Duration 01.08.2004 - 31.10.2004

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Title

Generalized far-infrared ellipsometry of magnetooptic free-carrier-effects in III-V semiconductor layer structures

Sponsor Deutsche Forschungsgemeinschaft (German National Science Foundation)
Grant Schu 1338/3-1
PI M. Schubert
The electron and hole effective mass and mobility, and their dependence on the carrier concentration shall be accurately determined using magnetooptic ellipsometry for exemplary multinary alloy zincblende group-III-group-V semiconductors. Materials of technological importance and current scientific interest investigated in this proposal are AlGaInP, and boron or nitrogen diluted InGaAs alloys, respectively.
Duration 01.01.2004 - 31.12.2005

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Title

Interface-induced electro-optic properties of oxide semiconductor - ferroelectrica heterostructures

Sponsor Deutsche Forschungsgemeinschaft, in Forschergruppe 404 "Oxidische Grenzflächen" (German National Science Foundation)
Grant Schu 1338/4-1,2
PI M. Schubert, M. Lorenz
Mit Hilfe der Laser-Plasmaabscheidung (PLD) werden Grenzflächen aus perowskitischen und wurtzitischen Materialien (Doppelheterostrukturen und Multischichten) hergestellt und bezüglich ihrer strukturellen, optischen und elektro-optischen Eigenschaften untersucht. Als Modellsystem wird in der ersten Phase Bariumtitanat (BaTiO3, Perowskit-Struktur) und Zinkoxid (ZnO, Wurtzit-Struktur) verwendet. Beide Systeme sind auf Grund ihrer besonderen materialphysikalischen Eigenschaften zukunftsorientierte Werkstoffe der Mikro- und Optoelektronik. Unser Ansatz besteht darin, schaltbare ionische Perowskit-Grenzflächenladungen mit nicht-schaltbaren ionischen Wurtzit-Grenzflächenladungen zu kombinieren, und deren Wechselwirkung zu studieren. Insbesondere soll der Einfluss der freien und gebundenen Grenzflächenladungen sowie der Realstruktur der Grenzflächen auf die Ausbildung ferroelektrischer Phasen innerhalb von Doppelheterostrukturen und Multischichten bestimmt werden. Fernziel ist die Exploration der neuartigen Materialkombinationen für Anwendungen in zukünftigen Bauelementstrukturen.
Duration 01.01.2004 - 31.12.2005(2006)

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Title

in-situ Analytik des Wachstums flexibler Solarzellen auf CuInSe2-Basis

Sponsor Solarion GmbH, Leipzig, Germany (SME)
Grant
PI M. Schubert
Optische und elektrische Eigenschaften von Dünnschichtsolarzellen auf flexiblen Substraten
Duration 01.01.2004 - 30.06.2004

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Title

Functional optical thin films

Sponsor Flabeg GmbH & Co. KG, Furth im Wald, Germany (SME)
Grant
PI M. Schubert
Control and optimization of functional optical coatings
Duration 01.09.2003 - 31.12.2003

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Title

In-situ-Ramanscattering and in-situ-Ellipsometry of flexible Cu-(In,Ga)-(Se,S)-thin-film solar cells

Sponsor Bundesministerium für Bildung und Forschung, in Wachstumskern INNOCIS
Grant 03WKI09 (subgrant FKO)
PI M. Schubert, V. Riede
The aim is the in-line, non-destructive, real-time control and feed-back for optimization of the optical and structural properties of the Cu-(In,Ga)-(Se,S)-thin-film solar cells during deposition at the Solarion GmbH Leipzig. A new combination of spectroscopic in-situ Raman scattering with in-situ spectroscopic ellipsometry shall be established.
Duration 01.08.2001 - 31.12.2003

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Title

Free-carrier properties and infrared dielectric functions of organic semiconductor layers

Sponsor JOANNEUM Research Forschungsgesellschaft mbH, Graz, Austria
Grant
PI M. Schubert
Infrared spectroscopic ellipsometry for wavenumbers from 333 cm-1 to 4000 cm-1 is used as unique technique for determination of free-carrier properties and phonon mode frequencies in organic semiconducting materials in layered structures. The ability of this non-contact optical tool to extract these information from extremely thin layers is tested. Hall effect measurements are performed in order to obatin complementary information. Model lineshape analysis of the ellipsometry data upon the classical Drude approach aimes at quantification of the free-carrier densitiy, mobility, and effective mass parameter information.
Duration 01.05.2001 - 31.12.2002

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Title

Generalized infrared ellipsometry characterization of lattice properties,
phonon modes and free-carrier parameters in group-III nitride heterostructures

Sponsor Deutsche Forschungsgemeinschaft, in Schwerpunktprogram SPP1032 (1997-2002) (German National Science Foundation)
Grant Rh 28/3-1, Rh 28/3-2
PI M. Schubert, B. Rheinländer
The group III-nitrides ((BN), GaN, AlN, InN, AlGaN, InGaN, AlInN) are promising materials for many optoelectronic device applications over a large spectral region (~ 1.9 eV ... 6 eV (~9 ... 10 eV)). Generalized infrared ellipsometry is used here to study anisotropy of phonon properties and free-carrier parameters of MBE and MOVPE grown group-III nitride single layers and heterostructurs. Special attention is drawn to the anisotropy of carrier effective mass and optical mobility parameters. The infrared ellipsometry technique is non-destructive, and is being uniquely employed for characterization of wide band gap materials in this proposal. Effects of strain and alloying in binary, ternary, and quaternary layers can be studied and separated. Composition and free-carrier parameters are accessible without sample contamination. For example, focus is directed on p and n-type doping in cubic and hexagonal GaN and AlGaN single layers and superlattices, 2DEG effects at the GaN-AlGaN interface, effects at the SiC/GaN interface, and correlation of electrical and optical carrier parameters.
Duration 01.01.1999 - 31.12.2002

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Title

Infrared Spectroscopic Ellipsometry

Sponsor National Science Foundation
Grant DMI-9901510 (subgrant)
PI M. Schubert, J. A. Woollam (University of Lincoln-Nebraska, U.S.A.)
This program investigates new applications of infrared ellipsometry with spectral range extension for characterization of microstructures in III-V materials. Lattice mode frequencies of Phosphides and Arsenides will be explored using a prototype rotating-analyzer spectroscopic ellipsometer setup. IR ellipsometry will be evaluated as a technique for studying spontaneously or synthetically ordered III- V semiconductors. In particular, spontaneous and synthetically ordering will be investigated in the (Al,Ga)InP and (Al,Ga)InAs systems. The investigations will aim to (1) measure and assign compound-material optical phonons and their polarization dependencies, (2) derive an anisotropic dielectric function model for the infrared response of ordered semiconductor compounds, and (3) compare the detected phonon modes with theoretical predictions. Synthetically ordered samples will cover a wide range of superlattice, and possibly embedded monolayer materials, with interest in characterization of the heterostructure optical properties and applicability for light emitting and detector systems.
Duration 01.10.1999 - 30.09.2001
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back to People last update 22. May 2006