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Journal articles: submission   2008   2007   2006   2005   2004   2003   2002  
  2001   2000   1999   1998   1997   1996   1995  

Electronic documents are intended for internal use only.
Corrections are added for misprints where known.

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Books

        Infrared Ellipsometry on semiconductor layer structures:
Phonons, Plasmons, and Polaritons
Reihe: Springer Tracts in Modern Physics, Band 209
Schubert, Mathias
2004, XI, 193 p. 77 illus., Hardcover
ISBN: 3-540-23249-4
Infos and contents: www.spingeronline.de


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Bookchapters

        Theory and Application of Generalized Ellipsometry
M. Schubert
In Handbook of Ellipsometry
Harland Tompkins and Eugene Irene (Editors)
William Andrews Publications, Norwich, NY
2005, 875 p., 6 x 9 Paperback
ISBN: 0-8155-1499-9
Infos and contents: http://www.williamandrew.com/


        Generalized Ellipsometry
M. Schubert
In Introduction to Complex Mediums for Optics and Electromagnetics
Werner S. Weiglhofer and Akhlesh Lakhtakia (Editors)
SPIE, Bellingham, Vol. PM123
2003, 776 p., Hardcover
Infos and contents: http://bookstore.spie.org/


        MOVPE growth, Phonons, Band-to-Band Transitions and Dielectric Functions of InGaNAs/GaAs Superlattices and Quantum Wells
G. Leibiger, V. Gottschalch,G. Benndorf, J. Sik, M. Schubert
In Compound semiconductor heterojunctions: physics and applications
edited by W. Cay and others
Transworld Research Network (2003)


        Metalorganic chemical vapor phase epitaxy of gallium-nitride on silicon
A. Dadgar, A. Strittmatter, A. Bläsing, M. Poschenrieder,
O. Contreras, P. Veit, T. Riemann, F. Bertram,
A. Reiher, A. Krtschil, A. Diez, T. Hempel, T. Finger, A. Kasic,
M.Schubert, D. Bimberg, F.A. Ponce, J. Christen, and A. Krost
In Group III-Nitrides and Their Heterostructres:
Growth, Characterization and Applications
edited by F. Bechstedt
WILEY-VCH (2003)


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Theses

        Phonons, free-carrier properties, and electronic interband transitions of binary, ternary, and quaternary group-III nitride layers measured by spectroscopic ellipsometry
A. Kasic
Shaker Verlag
2003, Paperback
ISBN: 3-8322-2079-8
Infos and contents: http://www.shaker.de/


        AIIIBV-Mischkristallbildung mit Stickstoff und Bor
G. Leibiger
Shaker Verlag
2004, Paperback
ISBN: 3-8322-2642-7
Infos and contents: http://www.shaker.de/


        Far-infrared spectroscopic ellipsometry on AIII BV semiconductor heterostructures
T. Hofmann
Shaker Verlag
2005, Paperback
ISBN: 3-8322-3891-3
Infos and contents: http://www.shaker.de/


        Phonons and plasmons in ZnO-based alloy and doped ZnO thin films studied by infrared spectroscopic ellipsometry and Raman scattering spectroscopy
C. Bundesmann
Shaker Verlag
2006, Paperback
ISBN: 3-8322-4730-0
Infos and contents: http://www.shaker.de/


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Articles in submission:

    212. Optical, electronic, and structural properties of NiO and NiMnO thin films grown on ZnO and sapphire substrates
L. Hartmann, Q. Xu, H. Schmidt, H. Hochmuth, M. Lorenz, M. Grundmann, P. Esquinazi, M. Saenger, T. Hofmann, M.Schubert, and S.-H. Liou
J. Appl. Phys. , (2008)


    211. Bulk and surface electron-induced infrared magnetooptic response in InN: A possible evidence for a new defect-related doping mechanism
T. Hofmann, H. Lu, W.J. Schaff, V. Darakchieva, and M. Schubert
Phys. Rev. Lett. , (2008)


    210. Terahertz Mueller matrix ellipsometry using a Smith-Purcell radiation source
T. Hofmann, C. M. Herzinger, M. Mross, T. Lowell, and M. Schubert
Rev. Sci. Inst. , (2008)


    209. Magneto-optic generalized ellipsometry in Zn1-xMnxSe: sp-d exchange and effective Mn concentration
M. Saenger, M. Hetterich, T. Hofmann, R. D. Kirby, D. J. Sellmyer, and M.Schubert
Appl. Phys. Lett. XX, XXX (2008) [DOI-link]


    208. Polaron and Phonon properties in WO3 thin films
M. Saenger, T. Höing, T. Hofmann, and M. Schubert
Phys. Rev. B , (2008)


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2008:

    207. Optical Hall-effect in hexagonal InN
T. Hofmann, V. Darakchieva, B. Monemar, H. Lu, W. J. Schaff, and M. Schubert
J. Electron. Mater 37, 611-615 (2008) [View PDF (420 kB)] [DOI-link]


    206. Infrared behavior of aluminum nanostructure sculptured thin films
T. Hofmann, M. Schubert, D. Schmidt, and E. Schubert
Mat. Res. Soc. Symp. Proc. 1080E, 1080-O04-16 (2008) [View PDF (598 kB)]


    205. The optical Hall effect
T. Hofmann, C.M. Herzinger, C. Krahmer, K. Streubel, and M. Schubert
phys. stat. sol. (a) 205, 779 (2008) [View PDF (2.7 MB)] [DOI-link]


    204. Optical Hall effect studies on modulation-doped AlxGa1-xAs:Si/GaAs quantum wells
T. Hofmann, C. von Middendorff, V. Gottschalch, and M. Schubert
phys. stat. sol. (c) 5, 1386 - 1390 (2008) [View PDF (407 kB)] [DOI-link]


    203. Polaron transitions in charge intercalated amorphous tungsten oxide thin films
M. F. Saenger, T. Höing, T. Hofmann, and M. Schubert
phys. stat. sol. (a) 205, 914 (2008) [View PDF (379 kB)] [DOI-link]


    202. Dielectric and magnetic birefringence in low-chlorine-doped n-type Zn1-xMnxSe
M. F. Saenger, M. Hetterich, R. D. Kirby, D. J. Sellmyer, and M. Schubert
phys. stat. sol. (c) 5, 1007 (2008) [View PDF (500 kB)] [DOI-link]


    201. Vacuum Ultraviolet Dielectric Function and Band Structure of ZnO
R. Schmidt-Grund, B. Rheinländer, E. M. Kaidashev, M. Lorenz, M. Grundmann, D. Fritsch, M. Schubert, H. Schmidt, and C. M. Herzinger
Journal of the Korean Physical Society 53, 88-93 (2008) [View PDF (568 kB)]


    200. Generalized Ellipsometry Determination of Non-reciprocity in Chiral Silicon Sculptured Thin Films
D. Schmidt, E. Schubert, and M. Schubert
phys. stat. sol. (a) 205, 748 (2008) [View PDF (1.0 MB)] [DOI-link]


    199. Epitaxial Deposition of SiC onto 4H SiC using a Hollow Cathode
R. J. Soukup, N. J. Ianno, J. L. Huguenin-Love, N. T. Lauer, T. Hofmann, and Z. Hubi?k
ECS Transactions , (2008)


    198. Investigation of the free charge carrier properties at the ZnO sapphire interface in a-plane ZnO films studied by generalized infrared ellipsometry
Ch. Sturm, T. Chavdarov, R. Schmidt-Grund, B. Rheinlaeander, C. Bundesmann, H. Hochmuth, M. Lorenz, M. Schubert, and M. Grundmann
phys. stat. sol. (c) , (2008) [View PDF (392 kB)] [DOI-link]


    197. Interface-charge-coupled polarization response of Pt-BaTiO3-ZnO-Pt heterojunctions: A physical model approach
V. M. Voora, T. Hofmann, M. Brandt, M. Lorenz, M. Grundmann, N. Ashkenov, and M. Schubert
J. Electron. Mater 37, 1029-1034 (2008) [View PDF (397 kB)] [DOI-link]


    196. Interface-charge-coupled polarization response model of Pt-BaTiO3-ZnO-Pt heterojunctions: Physical parameters variation
V. M. Voora, T. Hofmann, A. C. Kjerstad, M. Brandt, M. Lorenz, M. Grundmann, and M. Schubert
Mat. Res. Soc. Symp. Proc. 1074E, 1074-I01-11 (2008) [View PDF (87 kB)]


    195. Electrooptic ellipsometry study of piezoelectric BaTiO3-ZnO heterostructures
V. M. Voora, T. Hofmann, M. Brandt, M. Lorenz, M. Grundmann, and M. Schubert
phys. stat. sol. (c) 5, 1328 (2008) [View PDF (433 kB)] [DOI-link]


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2007:

    194. Dielectric constants and phonon modes of amorphous hafnium aluminate deposited by metal organic chemical vapor deposition
C. Bundesmann, O. Buiu, S. Hall, and M. Schubert
Appl. Phys. Lett. 91, 121916 (2007) [View PDF (139 kB)] [DOI-link]


    193. Anisotropic strain and phonon deformation potentials in GaN
V. Darakchieva, T. Paskova, M. Schubert, H. Arwin, P. P. Paskov, B. Monemar, D. Homme, M. Heuken, J. Off, F. Scholz, B. A. Haskell, P. T. Fini, J. S. Speck, and S. Nakamura
Phys. Rev. B 75, 195217 (2007) [View PDF (850 kB)] [DOI-link]


    192. Effect of anisotropic strain on phonons in a-plane and c-plane GaN layers
V. Darakehieva, T. Paskova, M. Schubert, P. P. Paskov, H. Arwin, B. Monemar, D. Hommel, M. Heuken, J. Off, B. A. Haskell, P. T. Fini, J. S. Speck, and S. Nakamura
J. Cryst. Growth 300, 233-238 (2007) [DOI-link]


    191. Electron effective mass and phonon modes in GaAs incorporating boron and indium
T. Hofmann, M. Schubert, G. Leibiger, and V. Gottschalch
Appl. Phys. Lett. 90, 182110 (2007) [View PDF (96 kB)] [DOI-link]


    190. Dielectric anisotropy and phonon modes of ordered indirect-gap Al0.52In0.48P studied by far-infrared ellipsometry
T. Hofmann, V. Gottschalch, and M. Schubert
Appl. Phys. Lett. 91, 121908 (2007) [View PDF (217 kB)] [DOI-link]


    189. Demonstration of an ultraviolet ZnO-based optically pumped third order distributed feedback laser
D. Hofstetter, Y. Bonetti,, F. R. Giorgetta, A-H El-Shaer, A. Bakin, A. Waag, R. Schmidt-Grund, M. Schubert, and M. Grundmann
Appl. Phys. Lett. 91, 111108 (2007) [View PDF (423 kB)] [DOI-link]


    188. MOVPE growth investigations of doping and ordering in AlGaAs and GaInP with reflectance anisotropy spectroscopy
C. Krahmer, M. Philippens, M. Schubert, and K. Streubel
J. Cryst. Growth 289, 18-22 (2007) [DOI-link]


    187. Polarization coupling in epitaxial ZnO / BaTiO3 thin film heterostructures on SrTiO3 (100) substrates
M. Lorenz, M. Brandt, J. Schubert, H. Hochmuth, H. von Wenckstern, M. Schubert, and M. Grundmann
SPIE Vol. 6474, 64741S (2007) [DOI-link]


    186. Ion beam assisted growth of sculptured thin films: Structure alignment and optical fingerprints
E. Schubert, F. Frost, H. Neumann, B. Rauschenbach, B. Fuhrmann, F. Heyroth, J. Rivory, B. Gallas, and M. Schubert
Adv. Solid State Phys. 46, 309-320 (2007) [DOI-link]


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2006:

    185. Phonon properties and doping of ZnMnSe epilayers grown by molecular beam epitaxy
K. C. Agarwal, B. Daniel, T. Hofmann, M. Schubert, C. Klingshirn, and M. Hetterich
phys. stat. sol. b 243, 914 (2006) [DOI-link]


    184. Infrared optical properties of MgxZn1-xO thin films: Long-wavelength optical phonons and dielectric constants
C. Bundesmann, A. Rahm, M. Lorenz, M. Grundmann, and M. Schubert
J. App. Phys. 99, 113504 (2006) [View PDF (339 kB)] [DOI-link]


    183. Phonon modes, dielectric constants, and exciton mass parameters in ternary MgxZn1-xO
C. Bundesmann, M. Lorenz, M. Grundmann, and M. Schubert
Mat. Res. Soc. Symp. Proc. 928E, GG05-03 (2006)


    182. Assessment of phonon mode characteristics via infrared spectroscopic ellipsometry on a-plane GaN
V. Darakchieva, T. Paskova, P. P. Paskov, H. Arwin, M. Schubert, B. Monemar, S. Figge, D. Hommel, B. A. Haskell, P. T. Fini, and S. Nakamura
phys. stat. sol. b 243, 1594-1598 (2006) [DOI-link]


    181. Properties of (InGa)As/GaAs QW (\lamda~1.2µm) Facet-Coated Edge Emitting Diode Laser
T. Gühne, V. Gottschalch, G. Leibiger, H. Herrnberger, J. Kovác, J. Kovác, Jr., R. Schmidt-Grund, B. Rheinländer, and D. Pudis
Laser Physics 16, 441-446 (2006) [View PDF (75 kB)] [DOI-link]


    180. Low temperature photoluminescence and infrared dielectric functions of pulsed laser deposited ZnO thin films on silicon
S. Heitsch, C. Bundesmann, G. Wagner, G. Zimmermann, A. Rahm, H. Hochmuth, G. Benndorf, H. Schmid t, M. Schubert, M. Lorenz, and M. Grundmann
Thin Solid Films 496, 234-239 (2006) [View PDF (351 kB)] [DOI-link]


    179. Conduction-band electron effective mass in Zn0.87Mn0.13Se measured by terahertz and far-infrared magnetooptic ellipsometry
T. Hofmann, U. Schade, K. C. Agarwal, B. Daniel, C. Klingshirn, M. Hetterich, C. M. Herzinger, and M. Schubert
Appl. Phys. Lett. 88, 042105 (2006) [View PDF (85 kB)] [DOI-link]


    178. Terahertz magnetooptic generalized ellipsometry using synchrotron and black-body radiation
T. Hofmann, U. Schade, W. Eberhardt, C. M. Herzinger, P. Esquinazi, and M. Schubert
Rev. Sci. Inst. 77, 063902 (2006) [DOI-link]


    177. Anisotropy of the Gamma-point effective mass and mobility in hexagonal InN
T. Hofmann, T. Chavdarov, V. Darakchieva, H. Lu, W.J. Schaff, and M. Schubert
phys. stat. sol. c 3, 1854-1857 (2006) [DOI-link]


    176. Terahertz magnetooptic generalized ellipsometry using synchrotron and black-body radiation
T. Hofmann, U. Schade, C. M. Herzinger, P. Esquinazi, and M. Schubert
SPIE Vol. 6120, 88-94 (2006) [DOI-link]


    175. Cathodoluminescence of large-area PLD grown ZnO thin films measured in transmission and reflection
R. Johne, M. Lorenz, H. Hochmuth, J. Lenzner, H. von Wenckstern, G. Zimmermann, H. Schmidt, R. Schmidt-Grund, and M. Grundmann
Appl. Phys. A 88, 89 (2006) [DOI-link]


    174. In-situ monitoring of MOVPE growth with Reflectance Anisotropy Spectroscopy in an industrial used multi wafer reactor
C. Krahmer, M. Philippens, M. Schubert, and K. Streubel
phys. stat. sol. c 3, 655-658 (2006) [DOI-link]


    173. RBS studies on coated micro-dimensional glass fibers used as micro-resonators
Ch. Meinecke, J. Vogt, R. Schmidt-Grund, and T. Butz
Nucl. Instr. and Meth. B 249, 387-389 (2006) [View PDF (183 kB)]


    172. Effect of high-temperature annealing on the residual strain and bending of freestanding GaN films grown by hydride vapor phase epitaxy
T. Paskova, D. Hommel, P. P. Paskov, V. Darakchieva, B. Monemar, M. Bockowski, T. Suski, I. Grzegory, F. Tuomisto, K. Saarinen, N. Ashkenov, and M. Schubert
Appl. Phys. Lett. 88, 141909 (2006) [DOI-link]


    171. Bending in HVPE GaN free-standing films: effects of laser lift-off, polishing and high-pressure annealing
T. Paskova, V. Darakchieva, P. P. Paskov, B. Monemar, M. Bukowski, T. Suskiand N. Ashkenov, M. Schubert, and D. Hommel
phys. stat. sol. c 3, 914 (2006)


    170. Cylindric resonators with coaxial Bragg reflectors
R. Schmidt-Grund, T. Gühne, H. Hochmuth, B. Rheinländer, A. Rahm, V. Gottschalch, J. Lenzner, and M. Grundmann
SPIE Vol. 6038, 603827 (2006) [View PDF (1.7 MB)] [DOI-link]


    169. Refractive indices and band-gap properties of rocksalt MgxZn1-xO (0.68 < x < 1)
R. Schmidt-Grund, A. Carstens, B. Rheinländer, D. Spemann, H. Hochmut, G. Zimmermann, M. Lorenz, M. Schubert, C. M. Herzinger, and M. Grundmann
J. App. Phys. 99, 123701 (2006) [View PDF (183 kB)] [DOI-link]


    168. ZnO micro-pillar resonators with coaxial Bragg reflectors
R. Schmidt-Grund, B. Rheinländer, T. Gühne, H. Hochmuth, V. Gottschalch, A. Rahm, J. Lenzner, and M. Grundmann
AIP Conf. Proc. 893, 1137 (2006) [DOI-link]


    167. Temperature-dependence of the refractive index and the optical transitions at the fundamental band-gap of ZnO
R. Schmidt-Grund, N. Ashkenov, M. M. Schubert, W. Czakai, D. Faltermeier, G. Benndorf, H. Hochmuth, M. Lorenz, and M. Grundmann
AIP Conf. Proc. 893, 271 (2006) [DOI-link]


    166. Another century of ellipsometry (Special issue on Paul Karl Ludwig Drude)
M. Schubert
Annalen der Physik 15, 480-497 (2006) [DOI-link]


    165. Recrystallization behavior in chiral sculptured thin films from silicon
E. Schubert, J. Fahlteich, B. Rauschenbach, M. Schubert, M. Lorenz, M. Grundmann, and G. Wagner
J. Appl. Phys. 100, 016107 (2006) [DOI-link]


    164. Optical Properties of Cylindrite
C. Sturm, R. Schmidt-Grund, R. Kaden, H. von Wenckstern, B. Rheinländer, K. Bente, and M. Grundmann
AIP Conf. Proc. 893, 1483 (2006) [DOI-link]


    163. Metal-insulator transition in Co-doped ZnO: Magnetotransport properties
Qingyu Xu, Lars Hartmann, Heidemarie Schmidt, Holger Hochmuth, Michael Lorenz, Rüdiger Schmidt-Grund, Chris Sturm, Daniel Spemann, and Marius Grundmann
Phys. Rev. B 73, 205342 (2006) [View PDF (155 kB)] [DOI-link]


    162. Magnetoresistance effects in Zn(0.90)Co(0.10)O films
Qingyu Xu, Lars Hartmann, Heidemarie Schmidt, Holger Hochmuth, Michael Lorenz, Rüdiger Schmidt-Grund, Daniel Spemann, and Marius Grundmann
J. Appl. Phys. 100, 013904 (2006) [View PDF (90 kB)] [DOI-link]


    161. Magnetoresistance in pulsed laser deposited 3d transition metal doped ZnO films
Qingyu Xu, Lars Hartmann, Heidemarie Schmidt, Holger Hochmuth, Michael Lorenz, Rüdiger Schmidt-Grund, Daniel Spemann, Andreas Rahm, and Marius Grundmann
Thin Solid Films 515, 2549 (2006) [View PDF (283 kB)] [DOI-link]


    160. The magnetotransport properties of Co-doped ZnO films
Q. Xu, L. Hartmann, H. Schmidt, H. Hochmuth, M. Lorenz, R. Schmidt-Grund, C. Sturm, D. Spemann, and M. Grundmann
AIP Conf. Proc. 893, 1187 (2006) [DOI-link]


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2005:

    159. Rectifying semiconductor-ferro electric polarization loops and offsets in Pt-BaTiO3-ZnO-Pt thin film capacitor structures
N. Ashkenov, M. Schubert , E. Twerdowski , H. von Wenckstern, B. N. Mbenkum, H. Hochmuth, M. Lorenz, W. Grill, and M. Grundmann
Thin Solid Films 486, 153-157 (2005) [View PDF (283 kB)] [DOI-link]


    158. Combined Raman scattering, X-ray fluorescence and ellipsometry in-situ growth monitoring of CuInSe2-based photoabsorber layers on polyimide substrates
C. Bundesmann, M. Schubert, N. Ashkenov, M. Grundmann, G. Lippold, and J. Piltz
AIP Conf. Proc. 772, 165 (2005) [View PDF (594 kB)]


    157. Optische Bestimmung der Eigenschaften freier Ladungsträger in ZnO-Dünnfilmen mittels spektroskopischer Infrarotellipsometrie
C. Bundesmann, M. Schubert, H. v. Wenckstern, M. Lorenz, and M. Grundmann
Tagungsband des 3. TCO-Workshops des Forschungsverbundes Solarenergie, Freyburg/Unstrut , 34-36 (2005) [View PDF (87 kB)]


    156. Structural characteristics and lattice parameters of hydride vapor phase epitaxial GaN free-standing quasisubstrates
V. Darakchieva, T. Paskova, P. P. Paskov, B. Monemar, N. Ashkenov, and M. Schubert
J. Appl. Phys. 97, 013517 (2005) [View PDF (98 kB)]


    155. Phonon mode behavior of wurtzite AlN/GaN superlattices
V. Darakchieva, E. Valcheva, P. P. Paskov, M. Schubert, T. Paskova, B. Monemar, H. Amano, and I. Akasaki
Phys. Rev. B 71, 115329 (2005)


    154. Roughness and damage of a GaAs surface after chemically assisted ion beam etching with Cl2/Ar^+
J. Dienelt, K. Zimmer, J. von Sonntag, B. Rauschenbach, and C. Bundesmann
Microelectronic Engineering 78-79, 457-463 (2005)


    153. Polarization-dependent optical transitions at the fundamental band gap and higher critical points of wurtzite ZnO
D. Fritsch, R. Schmidt-Grund, H. Schmidt, C. M. Herzinger, and M. Grundmann
IEEE Proceedings of the 5th Int. Conference on Numerical Simulation of Optoelectronic Devices , 69 (2005) [View PDF (326 kB)]


    152. High-quality 2 '' bulk-like free-standing GaN grown by hydride vapour phase epitaxy on a Si-doped metal organic vapour phase epitaxial GaN template with an ultra low dislocation density
D. Gogova, H. Larsson, A. Kasic, G. R. Yazdi, I. Ivanov, R. Yakimova, B. Monemar, E. Aujol, E. Frayssinet, J. P.Faurie, B. Beaumont, and P. Gibart P
Jpn. J. Appl. Phys. 44, 1181-1185 (2005)


    151. The inertial-mass scale for free-charge-carriers in semiconductor heterostructures
T. Hofmann, M. Schubert, C. von Middendorff, G. Leibiger, V. Gottschalch, C. M. Herzinger, A. Lindsay, and E. O'Reilly
AIP Conference Proceedings 772, 455-456 (2005)


    150. Growth and annealing of GaInAsN: density-functional calculations on the reactions of surface and bulk structures
A. Jenichen, C. Engler, G. Leibiger, and V. Gottschalch
Surface Science 574, 144-152 (2005) [View PDF (282 kB)]


    149. Nitrogen substitutions in GaAs(001) surfaces: Density-functional supercell calculations of the surface stability
A. Jenichen, C. Engler, G. Leibiger, and V. Gottschalch
phys. stat. sol. (b) 242, 2820-2832 (2005)


    148. Performance of III-nitride epitaxy in a low V-to-III gas-flow ratio under nitrogen ambient in a hot-wall MOCVD system
A. Kakanakova-Georgieva, A. Kasic, C. Hallin, B. Monemar, and E. Janzén
phys. stat. sol. (c) 2, 960-963 (2005) [View PDF (167 kB)]


    147. Adsorption of human serum albumin in porous silicon gradients monitored by spatially-resolved spectroscopic ellipsometry
L. M. Karlsson, M. Schubert, N. Ashkenov, and H. Arwin
phys. stat. sol. (c) 2, 3293 - 3297 (2005) [View PDF (230 kB)]


    146. Characterization of crack-free relaxed GaN grown on 2''-sapphire
A. Kasic, D. Gogova, H. Larsson, I. Ivanov, C. Hemmingsson, R. Yakimova, B. Monemar, and M. Heuken
J. Appl. Phys. 98, 073525 (2005) [View PDF (364 kB)]


    145. Characterization of crack-free relaxed GaN grown on 2('') sapphire
A. Kasic, D. Gogova, H. Larsson, I. Ivanov, C. Hemmingsson, R. Yakimova, B. Monemar, and M. Heuken
J. Appl. Phys. 98, 073525 (2005)


    144. Luminescence of ZnO thin films grown by pulsed laser deposition on 3C-SiC buffered Si
M. Lorenz, H. Hochmuth, A. Jammoul, G. Ferro, Ch. Förster, J. Pezoldt, J. Perez, G. Benndorf, J. Lenzner, R. Schmidt-Grund, and M. Grundmann
Wissenschaftlich Technische Berichte des Forschungszentrums Rossendorf FZR 433, 74 (2005) [View PDF (550 kB)]


    143. Composition and properties of ZnS thin films prepared by chemical bath deposition from acid and basic solutions
L. V. Mahkova, I. Konovalov, R. Szargan, N. Ashkenov, M. Schubert, and T. Chassé
phys. stat. sol. (c) 2, 1206 - 1211 (2005)


    142. Electro-optic Raman observation of low temperature phase transitions in ZnO-BaTiO3-ZnO heterostructures
B. N. Mbenkum, N. Ashkenov, M. Schubert, and M. Lorenz
AIP Conf. Proc. 772, 401-402 (2005)


    141. Temperature-dependent dielectric and electro-optic properties of a ZnO-BaTiO3-ZnO heterostructure grown by pulsed-laser deposition
B. N. Mbenkum, N. Ashkenov, M. Schubert, M. Lorenz, H. Hochmuth, D. Michel, M. Grundmann, and G. Wagner
Appl. Phys. Lett. 86, 091904 (2005) [View PDF (130 kB)]


    140. Optical properties of InN - the bandgap question
B. Monemar, P. P. Paskov, and A. Kasic
Superlattices and microstructures 38, 38-56 (2005)


    139. Growth of thick GaN layers by hydride vapor phase epitaxy
B. Monemar, T. Paskova, C. Hemmingsson, H. Larsson, P. P. Paskov, I. G. Ivanov, and A. Kasic
JOURNAL OF CERAMIC PROCESSING RESEARCH 6, 153-162 (2005)


    138. High pressure annealing of HVPE GaN free-standing films: redistribution of defects and stress
T. Paskova, T. Suski, M. Bockowski, P.P. Paskov, V. Darakchieva, B. Monemar, F. Tuomisto, K. Saarinen, N. Ashkenov, M. Schubert, C. Roder, and D. Hommel
Mat. Res. Soc. Symp. Proc. 831, E8.18.1 (2005) [View PDF (273 kB)]


    137. Band-to-band transitions and optical properties of MgxZn1-xO (0 < x < 1) films
R. Schmidt-Grund, D. Fritsch, M. Schubert, B. Rheinländer, H. Schmidt, H. Hochmuth, M. Lorenz, C.M. Herzinger, and M. Grundmann
AIP Conf. Proc. 772, 201 (2005) [View PDF (45 kB)]


    136. a-Si/SiOx Bragg-reflectors on micro-structured InP
R. Schmidt-Grund, T. Nobis, V. Gottschalch, B. Rheinländer, H. Herrnberger, and M. Grundmann
Thin Solid Films 483, 257-260 (2005) [View PDF (238 kB)] [DOI-link]


    135. Long-wavelength interface modes in semiconductor layer structures
M. Schubert, T. Hofmann, and J. Sik
Phys. Rev. B 71, 035324 (2005) [View PDF (382 kB)] [DOI-link]


    134. Lichtstarke kompakte in-situ Ramansonde
M. Schubert, C. Bundesmann, and G. Lippold
Patent application , DE 10 2004 006 391 A1 (2005) [View PDF (165 kB)]


    133. Erratum: Mie resonances, infrared emission, and the band gap of InN (vol 92, pg 117407, 2004)
T. V. Shubina, S. V. Ivanov V. N. Jmerik, D. D. Solnyshkov, V. A. Vekshin, P. S. Kop'ev, A. Vasson, J. Leymarie, A. Kavokin, H. Amano, K. Shimono, A. Kasic, and B. Monemar
Phys. Rev. Lett. 95, 209901 (2005)


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2004:

    132. Infrared dielectric functions and crystal orientation of a-plane ZnO thin films on r-plane sapphire determined by generalized ellipsometry
C. Bundesmann, N. Ashkenov, M. Schubert, A. Rahm, H. v. Wenckstern, E. M. Kaidashev, M. Lorenz, and M. Grundmann
Thin Solid Films 455-456, 161-166 (2004) [View PDF (158 kB)] [DOI-link]


    131. Infrared dielectric function and phonon modes of Mg-rich cubic MgxZn1-xO (x > 0.67) thin films on sapphire [0001]
C. Bundesmann, M. Schubert, D. Spemann, A. Rahm, H. Hochmuth, M. Lorenz, and M. Grundmann
Appl. Phys. Lett. 85, 905 (2004) [View PDF (74 kB)]


    130. Analysis of band anticrossing in GaNxP1-x alloys
I. A. Buyanova, M. Izadifard, A. Kasic, H. Arwin, W. M. Chen, H. P. Xin, Y. G. Hong, and C. W. Tu
Phys. Rev. B 70, 085209 (2004) [View PDF (82 kB)]


    129. Strain related structural and vibrational properties of thin epitaxial AlN layers
V. Darakchieva, J. Birch, M. Schubert, T. Paskova , S. Tungasmita, G. Wagner, A. Kasica, and B. Monemar
Phys. Rev. B 70, 045411 (2004) [View PDF (359 kB)]


    128. Infrared Ellipsometry and Raman Studies of hexagonal InN films: correlation between strain and vibrational properties
V. Darakchieva, P. Paskov, E. Valcheva, T. Paskova, M. Schubert, C. Bundesmann, H. Lu, W. J. Schaff, and B. Monemar
Superlattices and Microstructures 36, 573-580 (2004) [View PDF (331 kB)]


    127. Deformation potentials of the E1(TO) and E2 modes of InN
V. Darakchieva, P. P. Paskov, E. Valcheva, T. Paskova, B. Monemar, M. Schubert, H. Lu, and W. J. Schaff
Appl. Phys. Lett. 84, 3636 (2004)


    126. Strain evolution and phonons in AlN/GaN superlattices
V. Darakchieva, P. P. Paskov, M. Schubert, E. Valcheva, T. Paskova, H. Arwin, B. Monemar, H. Amano, and I. Akasaki
Mat. Res. Soc. Symp. 798, Y5.60 (2004)


    125. Optical and structural characteristics of virtually unstrained bulk-like GaN
D. Gogova, A. Kasic, H. Larsson, B. Pécz, R. Yakimova, B. Magnusson, B. Monemar, F. Tuomisto, K. Saarinen, C. R. Miskys, M. Stutzmann, C. Bundesmann, and M. Schubert
Jpn. J. Appl. Phys. 43, 1264 (2004)


    124. Strain-free bulk-like GaN grown by hydride-vapor-phase-epitaxy on two-step epitaxial lateral overgrown GaN template
D. Gogova, A. Kasic, H. Larsson, C. Hemmingsson, B. Monemar, F. Tuomisto, K. Saarinen, L. Dobos, B. Pécz, P. Gibart, and B. Beaumont
J. Appl. Phys. 96, 799-906 (2004)


    123. Characterization of high-quality free-standing GaN grown by HVPE
D. Gogova, A. Kasic, H. Larsson, B. Pécz, R. Yakimova, I. G. Ivanov, and B.Monemar
Physica scripta , accepted (2004)


    122. X-Ray Investigations of the intrinsic Carbon-Incorporation during the MOVPE Growth of AlGaAs
V. Gottschalch, G. Leibiger, and D. Spemann
Z. Anorg. Allg. Chemie 630, 1419-1422 (2004) [View PDF (92 kB)]


    121. Intrinsic carbon doping of (AlGa)As for (InGa)As laser structures (~1.17 mm)
V. Gottschalch, G. Leibiger, G. Benndorf, H. Herrnberger, and D. Spemann
J. Cryst. Growth 272, 642 (2004) [View PDF (265 kB)]


    120. Facet coating of edge emitting 1.2 µm-wavelength (InGa)As laser diodes
T. Gühne, V. Gottschalch, G. Leibiger, H. Herrnberger, J. Kovac, J. Kovac jr., R. Schmidt-Grund, and B. Rheinländer
Proceedings of the 28th Workshop on Compound Semiconductor Devices and Integrated Circuits Europe , WOCSDICE (2004) [View PDF (1.5 MB)]


    119. Far-Infrared Dielectric Function and Phonon Modes of Sponateously Ordered (AlxGa1-x)0.52In0.48P
T. Hofmann, M. Schubert, and V. Gottschalch
Thin Solid Films 455-456, 601-604 (2004) [View PDF (154 kB)] [DOI-link]


    118. Protein adsorption in porous silicon gradients monitored by spatially-resolved spectroscopic ellipsometry
L. M. Karlsson, M. Schubert, N. Ashkenov, and H. Arwin
Thin Solid Films 455-456, 726-730 (2004) [View PDF (386 kB)] [DOI-link]


    117. Micro-Raman scattering profiling studies on HVPE-grown free-standing GaN
A. Kasic, D. Gogova, H. Larsson, C. Hemmingsson, I. Ivanov, B. Monemar, C. Bundesmann, and M. Schubert
phys. stat. sol. (a) 201, 2773-2776 (2004) [View PDF (123 kB)]


    116. Highly homogeneous bulk-like 2´´ GaN grown by HVPE on MOCVD-GaN template
A. Kasic, D. Gogova, H. Larsson, I. Ivanov, J. Birch, B. Monemar, M. Fehrer, and V. Härle
J. Cryst. Growth , accepted (2004)


    115. InN dielectric function from the mid-infrared to the ultra-violet range
A. Kasic, E. Valcheva, B. Monemar, H. Lu, and W. J. Schaff
Phys. Rev. B 70, 115217 (2004) [View PDF (115 kB)]


    114. Optical properties of Zn1-xMnxSe epilayers determined by spectroscopic ellipsometry
J. Kvietkova, B. Daniel, M. Hetterich, M. Schubert, D. Spemann, P. Pfundstein, and D. Gerthsen
Thin Solid Films 455-456, 228-230 (2004) [View PDF (133 kB)] [DOI-link]


    113. Near-band-gap dielectric function of Zn1-xMnxSe thin films determined by spectroscopic ellipsometry
J. Kvietkova, B. Daniel, M. Hetterich, M. Schubert, D. Spemann, D. Litvinov, and D. Gerthsen
Phys. Rev. B 70, 045316 (2004)


    112. Hydrogen implantation in InGaNAs studied by spectroscopic ellipsometry
G. Leibiger, V. Gottschalch, N. Razek, A. Schindler, and M. Schubert
Thin Solid Films 455-456, 231-234 (2004) [View PDF (106 kB)] [DOI-link]


    111. Solar cells with (BGaIn)As and (InGa)(NAs) as absorption layers
G. Leibiger, C. Krahmer, J. Bauer, H. Herrnberger, and V. Gottschalch
J. Cryst. Growth 272, 732 (2004) [View PDF (244 kB)]


    110. Infrared to Vacuum Ultraviolet Optical Properties of 3C, 4H and 6H Silicon Carbide Measured by Spectroscopic Ellipsometry
O. P. A. Lindquist, Schubert, H. Arwin, and K. Järrendahl
Thin Solid Films 455-456, 235-238 (2004) [View PDF (116 kB)] [DOI-link]


    109. Advances of pulsed laser deposition of ZnO thin films
M. Lorenz, H. Hochmuth, R. Schmidt-Grund, E.M. Kaidashev, and M. Grundmann
Ann. Phys. 13, 59-61 (2004) [View PDF (131 kB)]


    108. Radiative recombination processes in Al0.07Ga0.93N/GaN multiple quantum well structures, role of hole localisation
B. Monemar, H. Haradizadeh, P. P. Paskov, J. P. Bergman, E. Valcheva, B. Arnadov, A. Kasic, P. O. Holtz, G. Pozina, S. Kamiyama, M. Iwaya, H. Amano, and I. Akasaki
phys. stat. sol. (c) 1, 2500 (2004)


    107. Polar and nonpolar GaN grown by HVPE: Preferable substrates for nitride-based emitting devices
T. Paskova, P. P. Paskov, E. Valcheva, V. Darakchieva, J. Birch, A. Kasic, B. Arnaudov, S. Tungasmita, and B. Monemar
phys. stat. sol. (a) 201, 2265 (2004) [View PDF (275 kB)]


    106. Optical modelling of a layered photovoltaic device with a polyfluorene-copolymer as the active layer
Nils-Krister Persson, M. Schubert, and O. Inganäs
Solar Energy Materials and Solar Cells 83, 169-186 (2004) [DOI-link]


    105. UV-VUV Spectroscopic ellipsometry of ternary MgxZn1-xO (x<0.53) thin films
R. Schmidt-Grund, M. Schubert, B. Rheinländer, D. Fritsch, H. Schmidt, E. M. Kaidashev, M. Lorenz, C. M. Herzinger, and M. Grundmann
Thin Solid Films 455-456, 500-504 (2004) [View PDF (259 kB)]


    104. Carrier redistribution in organic/inorganic (poly(3,4-ethylenedioxy thiophene/poly(styrenesulfonate)polymer)-Si) heterojunction determined from infrared ellipsometry
M. Schubert, C. Bundesmann, H. v. Wenckstern, G. Jakopic, A. Haase, N.-K. Persson, F. Zhang, H. Arwin, and O. Inganäs
Appl. Phys. Lett. 84, 1311-1313 (2004) [View PDF (63 kB)]


    103. Infrared dielectric function and vibrational modes of pentacene thin films
M. Schubert, C. Bundesmann, G. Jakopic, and H. Arwin
Appl. Phys. Lett. 84, 200-202 (2004) [View PDF (54 kB)]


    102. Infrared ellipsometry characterization of conducting thin organic films
M. Schubert, C. Bundesmann, G. Jakopic, H. Maresch, H. Arwin, N.-C. Persson, F. Zhang, and O. Inganäs
Thin Solid Films 455-456, 295-300 (2004) [View PDF (136 kB)] [DOI-link]


    101. Generalized ellipsometry for orthorhombic, absorbing materials: Dielectric functions, phonon modes, and band-to-band transitions of Sb2S3
M. Schubert, T. Hofmann, C. M. Herzinger, and W. Dollase
Thin Solid Films 455-456, 619-623 (2004) [DOI-link]


    100. Far-infrared magnetooptic generalized ellipsometry: determination of free-charge-carrier parameters in semiconductor thin film structures
M. Schubert, T. Hofmann, and C. M. Herzinger
Thin Solid Films 455-456, 563-570 (2004) [View PDF (239 kB)] [DOI-link]


    99. Electro-optical properties of ZnO-BaTiO3-ZnO heterostructures grown by pulsed laser deposition
M. Schubert, N. Ashkenov, T. Hofmann, H. Hochmuth, M. Lorenz, M. Grundmann, and G. Wagner
Ann. Phys. 13, 61-62 (2004) [View PDF (213 kB)] [DOI-link]


    98. Mie-resonances, infrared emission, and band gap of InN
T. V. Shubina, S. V. Ivanov, V. N. Jmerik, D. D. Solnyshkov, V. A. Vekshin, P. S. Kop´ev, A. Vasson, J. Leymarie, A. Kavokin, H. Amano, K. Shimono, A. Kasic, and B. Monemar
Phys. Rev. Lett. 92, 117407 (2004) [View PDF (592 kB)]


    97. Enhanced weak Anderson localization phenomena in the magnetoresistance of n-type (Ga,In)(N,As)
J. Teubert, P. J. Klar, W. Heimbrodt, K. Volz, W. Stolz, P. Thomas, G. Leibiger, and V. Gottschalch
Appl. Phys. Lett. 84, 747 (2004) [View PDF (83 kB)]


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2003:

    96. Infrared dielectric functions and phonon modes of high-quality ZnO films
N. Ashkenov, B. N. Mbenkum, C. Bundesmann, V. Riede, M. Lorenz, E. M. Kaidashev, A. Kasic, M. Schubert, M. Grundmann, G. Wagner, and H. Neumann
J. Appl. Phys. 93, 126 (2003) [View PDF (189 kB)]


    95. Raman scattering in ZnO thin films doped with Fe, Sb, Ga and Li
C. Bundesmann, N. Ashkenov, M. Schubert, D. Spemann, T. Butz, M. Lorenz, E. M. Kaidashev, and M. Grundmann
Appl. Phys. Lett. 83, 1974-1976 (2003) [View PDF (59 kB)]


    94. Metalorganic chemical vapor phase epitaxy of gallium-nitride on silicon
A. Dadgar, A. Strittmatter, J. Bläsing, M. Poschenrieder, O. Contreras, P. Veit, T. Riemann, F. Bertram, A. Reiher, A. Krtschil, A. Diez, T. Hempel, T. Finger, A. Kasic, M. Schubert, D. Bimberg, F. A. Ponce, J. Christen, and A. Krost
phys. stat. sol. (c) 0, 1583-1606 (2003) [View PDF (3.1 MB)]


    93. Residual strain in HVPE GaN free-standing and re-grown homoepitaxial layers
V. Darakchieva, T. Paskova, P.P. Paskov, B. Monemar, N. Ashkenov, and M. Schubert
phys. stat. sol. (a) 195, 516-522 (2003) [View PDF (484 kB)]