Publications

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Journal articles: submission	2008   2007   2006   2005   2004   2003   2002
	2001   2000   1999   1998   1997   1996   1995

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	Books
			Infrared Ellipsometry on semiconductor layer structures: Phonons, Plasmons, and Polaritons Reihe: Springer Tracts in Modern Physics, Band 209 Schubert, Mathias 2004, XI, 193 p. 77 illus., Hardcover ISBN: 3-540-23249-4 Infos and contents: www.spingeronline.de
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	Bookchapters
			Theory and Application of Generalized Ellipsometry M. Schubert In Handbook of Ellipsometry Harland Tompkins and Eugene Irene (Editors) William Andrews Publications, Norwich, NY 2005, 875 p., 6 x 9 Paperback ISBN: 0-8155-1499-9 Infos and contents: http://www.williamandrew.com/
			Generalized Ellipsometry M. Schubert In Introduction to Complex Mediums for Optics and Electromagnetics Werner S. Weiglhofer and Akhlesh Lakhtakia (Editors) SPIE, Bellingham, Vol. PM123 2003, 776 p., Hardcover Infos and contents: http://bookstore.spie.org/
			MOVPE growth, Phonons, Band-to-Band Transitions and Dielectric Functions of InGaNAs/GaAs Superlattices and Quantum Wells G. Leibiger, V. Gottschalch,G. Benndorf, J. Sik, M. Schubert In Compound semiconductor heterojunctions: physics and applications edited by W. Cay and others Transworld Research Network (2003)
			Metalorganic chemical vapor phase epitaxy of gallium-nitride on silicon A. Dadgar, A. Strittmatter, A. Bläsing, M. Poschenrieder, O. Contreras, P. Veit, T. Riemann, F. Bertram, A. Reiher, A. Krtschil, A. Diez, T. Hempel, T. Finger, A. Kasic, M.Schubert, D. Bimberg, F.A. Ponce, J. Christen, and A. Krost In Group III-Nitrides and Their Heterostructres: Growth, Characterization and Applications edited by F. Bechstedt WILEY-VCH (2003)
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	Theses
			Phonons, free-carrier properties, and electronic interband transitions of binary, ternary, and quaternary group-III nitride layers measured by spectroscopic ellipsometry A. Kasic Shaker Verlag 2003, Paperback ISBN: 3-8322-2079-8 Infos and contents: http://www.shaker.de/
			AIIIBV-Mischkristallbildung mit Stickstoff und Bor G. Leibiger Shaker Verlag 2004, Paperback ISBN: 3-8322-2642-7 Infos and contents: http://www.shaker.de/
			Far-infrared spectroscopic ellipsometry on AIII BV semiconductor heterostructures T. Hofmann Shaker Verlag 2005, Paperback ISBN: 3-8322-3891-3 Infos and contents: http://www.shaker.de/
			Phonons and plasmons in ZnO-based alloy and doped ZnO thin films studied by infrared spectroscopic ellipsometry and Raman scattering spectroscopy C. Bundesmann Shaker Verlag 2006, Paperback ISBN: 3-8322-4730-0 Infos and contents: http://www.shaker.de/
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	Articles in submission:
	212.		Optical, electronic, and structural properties of NiO and NiMnO thin films grown on ZnO and sapphire substrates L. Hartmann, Q. Xu, H. Schmidt, H. Hochmuth, M. Lorenz, M. Grundmann, P. Esquinazi, M. Saenger, T. Hofmann, M.Schubert, and S.-H. Liou J. Appl. Phys. , (2008)
	211.		Bulk and surface electron-induced infrared magnetooptic response in InN: A possible evidence for a new defect-related doping mechanism T. Hofmann, H. Lu, W.J. Schaff, V. Darakchieva, and M. Schubert Phys. Rev. Lett. , (2008)
	210.		Terahertz Mueller matrix ellipsometry using a Smith-Purcell radiation source T. Hofmann, C. M. Herzinger, M. Mross, T. Lowell, and M. Schubert Rev. Sci. Inst. , (2008)
	209.		Magneto-optic generalized ellipsometry in Zn1-xMnxSe: sp-d exchange and effective Mn concentration M. Saenger, M. Hetterich, T. Hofmann, R. D. Kirby, D. J. Sellmyer, and M.Schubert Appl. Phys. Lett. XX, XXX (2008) [DOI-link]
	208.		Polaron and Phonon properties in WO3 thin films M. Saenger, T. Höing, T. Hofmann, and M. Schubert Phys. Rev. B , (2008)
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	2008:
	207.		Optical Hall-effect in hexagonal InN T. Hofmann, V. Darakchieva, B. Monemar, H. Lu, W. J. Schaff, and M. Schubert J. Electron. Mater 37, 611-615 (2008) [View PDF (420 kB)] [DOI-link]
	206.		Infrared behavior of aluminum nanostructure sculptured thin films T. Hofmann, M. Schubert, D. Schmidt, and E. Schubert Mat. Res. Soc. Symp. Proc. 1080E, 1080-O04-16 (2008) [View PDF (598 kB)]
	205.		The optical Hall effect T. Hofmann, C.M. Herzinger, C. Krahmer, K. Streubel, and M. Schubert phys. stat. sol. (a) 205, 779 (2008) [View PDF (2.7 MB)] [DOI-link]
	204.		Optical Hall effect studies on modulation-doped AlxGa1-xAs:Si/GaAs quantum wells T. Hofmann, C. von Middendorff, V. Gottschalch, and M. Schubert phys. stat. sol. (c) 5, 1386 - 1390 (2008) [View PDF (407 kB)] [DOI-link]
	203.		Polaron transitions in charge intercalated amorphous tungsten oxide thin films M. F. Saenger, T. Höing, T. Hofmann, and M. Schubert phys. stat. sol. (a) 205, 914 (2008) [View PDF (379 kB)] [DOI-link]
	202.		Dielectric and magnetic birefringence in low-chlorine-doped n-type Zn1-xMnxSe M. F. Saenger, M. Hetterich, R. D. Kirby, D. J. Sellmyer, and M. Schubert phys. stat. sol. (c) 5, 1007 (2008) [View PDF (500 kB)] [DOI-link]
	201.		Vacuum Ultraviolet Dielectric Function and Band Structure of ZnO R. Schmidt-Grund, B. Rheinländer, E. M. Kaidashev, M. Lorenz, M. Grundmann, D. Fritsch, M. Schubert, H. Schmidt, and C. M. Herzinger Journal of the Korean Physical Society 53, 88-93 (2008) [View PDF (568 kB)]
	200.		Generalized Ellipsometry Determination of Non-reciprocity in Chiral Silicon Sculptured Thin Films D. Schmidt, E. Schubert, and M. Schubert phys. stat. sol. (a) 205, 748 (2008) [View PDF (1.0 MB)] [DOI-link]
	199.		Epitaxial Deposition of SiC onto 4H SiC using a Hollow Cathode R. J. Soukup, N. J. Ianno, J. L. Huguenin-Love, N. T. Lauer, T. Hofmann, and Z. Hubi?k ECS Transactions , (2008)
	198.		Investigation of the free charge carrier properties at the ZnO sapphire interface in a-plane ZnO films studied by generalized infrared ellipsometry Ch. Sturm, T. Chavdarov, R. Schmidt-Grund, B. Rheinlaeander, C. Bundesmann, H. Hochmuth, M. Lorenz, M. Schubert, and M. Grundmann phys. stat. sol. (c) , (2008) [View PDF (392 kB)] [DOI-link]
	197.		Interface-charge-coupled polarization response of Pt-BaTiO3-ZnO-Pt heterojunctions: A physical model approach V. M. Voora, T. Hofmann, M. Brandt, M. Lorenz, M. Grundmann, N. Ashkenov, and M. Schubert J. Electron. Mater 37, 1029-1034 (2008) [View PDF (397 kB)] [DOI-link]
	196.		Interface-charge-coupled polarization response model of Pt-BaTiO3-ZnO-Pt heterojunctions: Physical parameters variation V. M. Voora, T. Hofmann, A. C. Kjerstad, M. Brandt, M. Lorenz, M. Grundmann, and M. Schubert Mat. Res. Soc. Symp. Proc. 1074E, 1074-I01-11 (2008) [View PDF (87 kB)]
	195.		Electrooptic ellipsometry study of piezoelectric BaTiO3-ZnO heterostructures V. M. Voora, T. Hofmann, M. Brandt, M. Lorenz, M. Grundmann, and M. Schubert phys. stat. sol. (c) 5, 1328 (2008) [View PDF (433 kB)] [DOI-link]
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	2007:
	194.		Dielectric constants and phonon modes of amorphous hafnium aluminate deposited by metal organic chemical vapor deposition C. Bundesmann, O. Buiu, S. Hall, and M. Schubert Appl. Phys. Lett. 91, 121916 (2007) [View PDF (139 kB)] [DOI-link]
	193.		Anisotropic strain and phonon deformation potentials in GaN V. Darakchieva, T. Paskova, M. Schubert, H. Arwin, P. P. Paskov, B. Monemar, D. Homme, M. Heuken, J. Off, F. Scholz, B. A. Haskell, P. T. Fini, J. S. Speck, and S. Nakamura Phys. Rev. B 75, 195217 (2007) [View PDF (850 kB)] [DOI-link]
	192.		Effect of anisotropic strain on phonons in a-plane and c-plane GaN layers V. Darakehieva, T. Paskova, M. Schubert, P. P. Paskov, H. Arwin, B. Monemar, D. Hommel, M. Heuken, J. Off, B. A. Haskell, P. T. Fini, J. S. Speck, and S. Nakamura J. Cryst. Growth 300, 233-238 (2007) [DOI-link]
	191.		Electron effective mass and phonon modes in GaAs incorporating boron and indium T. Hofmann, M. Schubert, G. Leibiger, and V. Gottschalch Appl. Phys. Lett. 90, 182110 (2007) [View PDF (96 kB)] [DOI-link]
	190.		Dielectric anisotropy and phonon modes of ordered indirect-gap Al0.52In0.48P studied by far-infrared ellipsometry T. Hofmann, V. Gottschalch, and M. Schubert Appl. Phys. Lett. 91, 121908 (2007) [View PDF (217 kB)] [DOI-link]
	189.		Demonstration of an ultraviolet ZnO-based optically pumped third order distributed feedback laser D. Hofstetter, Y. Bonetti,, F. R. Giorgetta, A-H El-Shaer, A. Bakin, A. Waag, R. Schmidt-Grund, M. Schubert, and M. Grundmann Appl. Phys. Lett. 91, 111108 (2007) [View PDF (423 kB)] [DOI-link]
	188.		MOVPE growth investigations of doping and ordering in AlGaAs and GaInP with reflectance anisotropy spectroscopy C. Krahmer, M. Philippens, M. Schubert, and K. Streubel J. Cryst. Growth 289, 18-22 (2007) [DOI-link]
	187.		Polarization coupling in epitaxial ZnO / BaTiO3 thin film heterostructures on SrTiO3 (100) substrates M. Lorenz, M. Brandt, J. Schubert, H. Hochmuth, H. von Wenckstern, M. Schubert, and M. Grundmann SPIE Vol. 6474, 64741S (2007) [DOI-link]
	186.		Ion beam assisted growth of sculptured thin films: Structure alignment and optical fingerprints E. Schubert, F. Frost, H. Neumann, B. Rauschenbach, B. Fuhrmann, F. Heyroth, J. Rivory, B. Gallas, and M. Schubert Adv. Solid State Phys. 46, 309-320 (2007) [DOI-link]
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	2006:
	185.		Phonon properties and doping of ZnMnSe epilayers grown by molecular beam epitaxy K. C. Agarwal, B. Daniel, T. Hofmann, M. Schubert, C. Klingshirn, and M. Hetterich phys. stat. sol. b 243, 914 (2006) [DOI-link]
	184.		Infrared optical properties of MgxZn1-xO thin films: Long-wavelength optical phonons and dielectric constants C. Bundesmann, A. Rahm, M. Lorenz, M. Grundmann, and M. Schubert J. App. Phys. 99, 113504 (2006) [View PDF (339 kB)] [DOI-link]
	183.		Phonon modes, dielectric constants, and exciton mass parameters in ternary MgxZn1-xO C. Bundesmann, M. Lorenz, M. Grundmann, and M. Schubert Mat. Res. Soc. Symp. Proc. 928E, GG05-03 (2006)
	182.		Assessment of phonon mode characteristics via infrared spectroscopic ellipsometry on a-plane GaN V. Darakchieva, T. Paskova, P. P. Paskov, H. Arwin, M. Schubert, B. Monemar, S. Figge, D. Hommel, B. A. Haskell, P. T. Fini, and S. Nakamura phys. stat. sol. b 243, 1594-1598 (2006) [DOI-link]
	181.		Properties of (InGa)As/GaAs QW (\lamda~1.2µm) Facet-Coated Edge Emitting Diode Laser T. Gühne, V. Gottschalch, G. Leibiger, H. Herrnberger, J. Kovác, J. Kovác, Jr., R. Schmidt-Grund, B. Rheinländer, and D. Pudis Laser Physics 16, 441-446 (2006) [View PDF (75 kB)] [DOI-link]
	180.		Low temperature photoluminescence and infrared dielectric functions of pulsed laser deposited ZnO thin films on silicon S. Heitsch, C. Bundesmann, G. Wagner, G. Zimmermann, A. Rahm, H. Hochmuth, G. Benndorf, H. Schmid t, M. Schubert, M. Lorenz, and M. Grundmann Thin Solid Films 496, 234-239 (2006) [View PDF (351 kB)] [DOI-link]
	179.		Conduction-band electron effective mass in Zn0.87Mn0.13Se measured by terahertz and far-infrared magnetooptic ellipsometry T. Hofmann, U. Schade, K. C. Agarwal, B. Daniel, C. Klingshirn, M. Hetterich, C. M. Herzinger, and M. Schubert Appl. Phys. Lett. 88, 042105 (2006) [View PDF (85 kB)] [DOI-link]
	178.		Terahertz magnetooptic generalized ellipsometry using synchrotron and black-body radiation T. Hofmann, U. Schade, W. Eberhardt, C. M. Herzinger, P. Esquinazi, and M. Schubert Rev. Sci. Inst. 77, 063902 (2006) [DOI-link]
	177.		Anisotropy of the Gamma-point effective mass and mobility in hexagonal InN T. Hofmann, T. Chavdarov, V. Darakchieva, H. Lu, W.J. Schaff, and M. Schubert phys. stat. sol. c 3, 1854-1857 (2006) [DOI-link]
	176.		Terahertz magnetooptic generalized ellipsometry using synchrotron and black-body radiation T. Hofmann, U. Schade, C. M. Herzinger, P. Esquinazi, and M. Schubert SPIE Vol. 6120, 88-94 (2006) [DOI-link]
	175.		Cathodoluminescence of large-area PLD grown ZnO thin films measured in transmission and reflection R. Johne, M. Lorenz, H. Hochmuth, J. Lenzner, H. von Wenckstern, G. Zimmermann, H. Schmidt, R. Schmidt-Grund, and M. Grundmann Appl. Phys. A 88, 89 (2006) [DOI-link]
	174.		In-situ monitoring of MOVPE growth with Reflectance Anisotropy Spectroscopy in an industrial used multi wafer reactor C. Krahmer, M. Philippens, M. Schubert, and K. Streubel phys. stat. sol. c 3, 655-658 (2006) [DOI-link]
	173.		RBS studies on coated micro-dimensional glass fibers used as micro-resonators Ch. Meinecke, J. Vogt, R. Schmidt-Grund, and T. Butz Nucl. Instr. and Meth. B 249, 387-389 (2006) [View PDF (183 kB)]
	172.		Effect of high-temperature annealing on the residual strain and bending of freestanding GaN films grown by hydride vapor phase epitaxy T. Paskova, D. Hommel, P. P. Paskov, V. Darakchieva, B. Monemar, M. Bockowski, T. Suski, I. Grzegory, F. Tuomisto, K. Saarinen, N. Ashkenov, and M. Schubert Appl. Phys. Lett. 88, 141909 (2006) [DOI-link]
	171.		Bending in HVPE GaN free-standing films: effects of laser lift-off, polishing and high-pressure annealing T. Paskova, V. Darakchieva, P. P. Paskov, B. Monemar, M. Bukowski, T. Suskiand N. Ashkenov, M. Schubert, and D. Hommel phys. stat. sol. c 3, 914 (2006)
	170.		Cylindric resonators with coaxial Bragg reflectors R. Schmidt-Grund, T. Gühne, H. Hochmuth, B. Rheinländer, A. Rahm, V. Gottschalch, J. Lenzner, and M. Grundmann SPIE Vol. 6038, 603827 (2006) [View PDF (1.7 MB)] [DOI-link]
	169.		Refractive indices and band-gap properties of rocksalt MgxZn1-xO (0.68 < x < 1) R. Schmidt-Grund, A. Carstens, B. Rheinländer, D. Spemann, H. Hochmut, G. Zimmermann, M. Lorenz, M. Schubert, C. M. Herzinger, and M. Grundmann J. App. Phys. 99, 123701 (2006) [View PDF (183 kB)] [DOI-link]
	168.		ZnO micro-pillar resonators with coaxial Bragg reflectors R. Schmidt-Grund, B. Rheinländer, T. Gühne, H. Hochmuth, V. Gottschalch, A. Rahm, J. Lenzner, and M. Grundmann AIP Conf. Proc. 893, 1137 (2006) [DOI-link]
	167.		Temperature-dependence of the refractive index and the optical transitions at the fundamental band-gap of ZnO R. Schmidt-Grund, N. Ashkenov, M. M. Schubert, W. Czakai, D. Faltermeier, G. Benndorf, H. Hochmuth, M. Lorenz, and M. Grundmann AIP Conf. Proc. 893, 271 (2006) [DOI-link]
	166.		Another century of ellipsometry (Special issue on Paul Karl Ludwig Drude) M. Schubert Annalen der Physik 15, 480-497 (2006) [DOI-link]
	165.		Recrystallization behavior in chiral sculptured thin films from silicon E. Schubert, J. Fahlteich, B. Rauschenbach, M. Schubert, M. Lorenz, M. Grundmann, and G. Wagner J. Appl. Phys. 100, 016107 (2006) [DOI-link]
	164.		Optical Properties of Cylindrite C. Sturm, R. Schmidt-Grund, R. Kaden, H. von Wenckstern, B. Rheinländer, K. Bente, and M. Grundmann AIP Conf. Proc. 893, 1483 (2006) [DOI-link]
	163.		Metal-insulator transition in Co-doped ZnO: Magnetotransport properties Qingyu Xu, Lars Hartmann, Heidemarie Schmidt, Holger Hochmuth, Michael Lorenz, Rüdiger Schmidt-Grund, Chris Sturm, Daniel Spemann, and Marius Grundmann Phys. Rev. B 73, 205342 (2006) [View PDF (155 kB)] [DOI-link]
	162.		Magnetoresistance effects in Zn(0.90)Co(0.10)O films Qingyu Xu, Lars Hartmann, Heidemarie Schmidt, Holger Hochmuth, Michael Lorenz, Rüdiger Schmidt-Grund, Daniel Spemann, and Marius Grundmann J. Appl. Phys. 100, 013904 (2006) [View PDF (90 kB)] [DOI-link]
	161.		Magnetoresistance in pulsed laser deposited 3d transition metal doped ZnO films Qingyu Xu, Lars Hartmann, Heidemarie Schmidt, Holger Hochmuth, Michael Lorenz, Rüdiger Schmidt-Grund, Daniel Spemann, Andreas Rahm, and Marius Grundmann Thin Solid Films 515, 2549 (2006) [View PDF (283 kB)] [DOI-link]
	160.		The magnetotransport properties of Co-doped ZnO films Q. Xu, L. Hartmann, H. Schmidt, H. Hochmuth, M. Lorenz, R. Schmidt-Grund, C. Sturm, D. Spemann, and M. Grundmann AIP Conf. Proc. 893, 1187 (2006) [DOI-link]
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	2005:
	159.		Rectifying semiconductor-ferro electric polarization loops and offsets in Pt-BaTiO3-ZnO-Pt thin film capacitor structures N. Ashkenov, M. Schubert , E. Twerdowski , H. von Wenckstern, B. N. Mbenkum, H. Hochmuth, M. Lorenz, W. Grill, and M. Grundmann Thin Solid Films 486, 153-157 (2005) [View PDF (283 kB)] [DOI-link]
	158.		Combined Raman scattering, X-ray fluorescence and ellipsometry in-situ growth monitoring of CuInSe2-based photoabsorber layers on polyimide substrates C. Bundesmann, M. Schubert, N. Ashkenov, M. Grundmann, G. Lippold, and J. Piltz AIP Conf. Proc. 772, 165 (2005) [View PDF (594 kB)]
	157.		Optische Bestimmung der Eigenschaften freier Ladungsträger in ZnO-Dünnfilmen mittels spektroskopischer Infrarotellipsometrie C. Bundesmann, M. Schubert, H. v. Wenckstern, M. Lorenz, and M. Grundmann Tagungsband des 3. TCO-Workshops des Forschungsverbundes Solarenergie, Freyburg/Unstrut , 34-36 (2005) [View PDF (87 kB)]
	156.		Structural characteristics and lattice parameters of hydride vapor phase epitaxial GaN free-standing quasisubstrates V. Darakchieva, T. Paskova, P. P. Paskov, B. Monemar, N. Ashkenov, and M. Schubert J. Appl. Phys. 97, 013517 (2005) [View PDF (98 kB)]
	155.		Phonon mode behavior of wurtzite AlN/GaN superlattices V. Darakchieva, E. Valcheva, P. P. Paskov, M. Schubert, T. Paskova, B. Monemar, H. Amano, and I. Akasaki Phys. Rev. B 71, 115329 (2005)
	154.		Roughness and damage of a GaAs surface after chemically assisted ion beam etching with Cl2/Ar^+ J. Dienelt, K. Zimmer, J. von Sonntag, B. Rauschenbach, and C. Bundesmann Microelectronic Engineering 78-79, 457-463 (2005)
	153.		Polarization-dependent optical transitions at the fundamental band gap and higher critical points of wurtzite ZnO D. Fritsch, R. Schmidt-Grund, H. Schmidt, C. M. Herzinger, and M. Grundmann IEEE Proceedings of the 5th Int. Conference on Numerical Simulation of Optoelectronic Devices , 69 (2005) [View PDF (326 kB)]
	152.		High-quality 2 '' bulk-like free-standing GaN grown by hydride vapour phase epitaxy on a Si-doped metal organic vapour phase epitaxial GaN template with an ultra low dislocation density D. Gogova, H. Larsson, A. Kasic, G. R. Yazdi, I. Ivanov, R. Yakimova, B. Monemar, E. Aujol, E. Frayssinet, J. P.Faurie, B. Beaumont, and P. Gibart P Jpn. J. Appl. Phys. 44, 1181-1185 (2005)
	151.		The inertial-mass scale for free-charge-carriers in semiconductor heterostructures T. Hofmann, M. Schubert, C. von Middendorff, G. Leibiger, V. Gottschalch, C. M. Herzinger, A. Lindsay, and E. O'Reilly AIP Conference Proceedings 772, 455-456 (2005)
	150.		Growth and annealing of GaInAsN: density-functional calculations on the reactions of surface and bulk structures A. Jenichen, C. Engler, G. Leibiger, and V. Gottschalch Surface Science 574, 144-152 (2005) [View PDF (282 kB)]
	149.		Nitrogen substitutions in GaAs(001) surfaces: Density-functional supercell calculations of the surface stability A. Jenichen, C. Engler, G. Leibiger, and V. Gottschalch phys. stat. sol. (b) 242, 2820-2832 (2005)
	148.		Performance of III-nitride epitaxy in a low V-to-III gas-flow ratio under nitrogen ambient in a hot-wall MOCVD system A. Kakanakova-Georgieva, A. Kasic, C. Hallin, B. Monemar, and E. Janzén phys. stat. sol. (c) 2, 960-963 (2005) [View PDF (167 kB)]
	147.		Adsorption of human serum albumin in porous silicon gradients monitored by spatially-resolved spectroscopic ellipsometry L. M. Karlsson, M. Schubert, N. Ashkenov, and H. Arwin phys. stat. sol. (c) 2, 3293 - 3297 (2005) [View PDF (230 kB)]
	146.		Characterization of crack-free relaxed GaN grown on 2''-sapphire A. Kasic, D. Gogova, H. Larsson, I. Ivanov, C. Hemmingsson, R. Yakimova, B. Monemar, and M. Heuken J. Appl. Phys. 98, 073525 (2005) [View PDF (364 kB)]
	145.		Characterization of crack-free relaxed GaN grown on 2('') sapphire A. Kasic, D. Gogova, H. Larsson, I. Ivanov, C. Hemmingsson, R. Yakimova, B. Monemar, and M. Heuken J. Appl. Phys. 98, 073525 (2005)
	144.		Luminescence of ZnO thin films grown by pulsed laser deposition on 3C-SiC buffered Si M. Lorenz, H. Hochmuth, A. Jammoul, G. Ferro, Ch. Förster, J. Pezoldt, J. Perez, G. Benndorf, J. Lenzner, R. Schmidt-Grund, and M. Grundmann Wissenschaftlich Technische Berichte des Forschungszentrums Rossendorf FZR 433, 74 (2005) [View PDF (550 kB)]
	143.		Composition and properties of ZnS thin films prepared by chemical bath deposition from acid and basic solutions L. V. Mahkova, I. Konovalov, R. Szargan, N. Ashkenov, M. Schubert, and T. Chassé phys. stat. sol. (c) 2, 1206 - 1211 (2005)
	142.		Electro-optic Raman observation of low temperature phase transitions in ZnO-BaTiO3-ZnO heterostructures B. N. Mbenkum, N. Ashkenov, M. Schubert, and M. Lorenz AIP Conf. Proc. 772, 401-402 (2005)
	141.		Temperature-dependent dielectric and electro-optic properties of a ZnO-BaTiO3-ZnO heterostructure grown by pulsed-laser deposition B. N. Mbenkum, N. Ashkenov, M. Schubert, M. Lorenz, H. Hochmuth, D. Michel, M. Grundmann, and G. Wagner Appl. Phys. Lett. 86, 091904 (2005) [View PDF (130 kB)]
	140.		Optical properties of InN - the bandgap question B. Monemar, P. P. Paskov, and A. Kasic Superlattices and microstructures 38, 38-56 (2005)
	139.		Growth of thick GaN layers by hydride vapor phase epitaxy B. Monemar, T. Paskova, C. Hemmingsson, H. Larsson, P. P. Paskov, I. G. Ivanov, and A. Kasic JOURNAL OF CERAMIC PROCESSING RESEARCH 6, 153-162 (2005)
	138.		High pressure annealing of HVPE GaN free-standing films: redistribution of defects and stress T. Paskova, T. Suski, M. Bockowski, P.P. Paskov, V. Darakchieva, B. Monemar, F. Tuomisto, K. Saarinen, N. Ashkenov, M. Schubert, C. Roder, and D. Hommel Mat. Res. Soc. Symp. Proc. 831, E8.18.1 (2005) [View PDF (273 kB)]
	137.		Band-to-band transitions and optical properties of MgxZn1-xO (0 < x < 1) films R. Schmidt-Grund, D. Fritsch, M. Schubert, B. Rheinländer, H. Schmidt, H. Hochmuth, M. Lorenz, C.M. Herzinger, and M. Grundmann AIP Conf. Proc. 772, 201 (2005) [View PDF (45 kB)]
	136.		a-Si/SiOx Bragg-reflectors on micro-structured InP R. Schmidt-Grund, T. Nobis, V. Gottschalch, B. Rheinländer, H. Herrnberger, and M. Grundmann Thin Solid Films 483, 257-260 (2005) [View PDF (238 kB)] [DOI-link]
	135.		Long-wavelength interface modes in semiconductor layer structures M. Schubert, T. Hofmann, and J. Sik Phys. Rev. B 71, 035324 (2005) [View PDF (382 kB)] [DOI-link]
	134.		Lichtstarke kompakte in-situ Ramansonde M. Schubert, C. Bundesmann, and G. Lippold Patent application , DE 10 2004 006 391 A1 (2005) [View PDF (165 kB)]
	133.		Erratum: Mie resonances, infrared emission, and the band gap of InN (vol 92, pg 117407, 2004) T. V. Shubina, S. V. Ivanov V. N. Jmerik, D. D. Solnyshkov, V. A. Vekshin, P. S. Kop'ev, A. Vasson, J. Leymarie, A. Kavokin, H. Amano, K. Shimono, A. Kasic, and B. Monemar Phys. Rev. Lett. 95, 209901 (2005)
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	2004:
	132.		Infrared dielectric functions and crystal orientation of a-plane ZnO thin films on r-plane sapphire determined by generalized ellipsometry C. Bundesmann, N. Ashkenov, M. Schubert, A. Rahm, H. v. Wenckstern, E. M. Kaidashev, M. Lorenz, and M. Grundmann Thin Solid Films 455-456, 161-166 (2004) [View PDF (158 kB)] [DOI-link]
	131.		Infrared dielectric function and phonon modes of Mg-rich cubic MgxZn1-xO (x > 0.67) thin films on sapphire [0001] C. Bundesmann, M. Schubert, D. Spemann, A. Rahm, H. Hochmuth, M. Lorenz, and M. Grundmann Appl. Phys. Lett. 85, 905 (2004) [View PDF (74 kB)]
	130.		Analysis of band anticrossing in GaNxP1-x alloys I. A. Buyanova, M. Izadifard, A. Kasic, H. Arwin, W. M. Chen, H. P. Xin, Y. G. Hong, and C. W. Tu Phys. Rev. B 70, 085209 (2004) [View PDF (82 kB)]
	129.		Strain related structural and vibrational properties of thin epitaxial AlN layers V. Darakchieva, J. Birch, M. Schubert, T. Paskova , S. Tungasmita, G. Wagner, A. Kasica, and B. Monemar Phys. Rev. B 70, 045411 (2004) [View PDF (359 kB)]
	128.		Infrared Ellipsometry and Raman Studies of hexagonal InN films: correlation between strain and vibrational properties V. Darakchieva, P. Paskov, E. Valcheva, T. Paskova, M. Schubert, C. Bundesmann, H. Lu, W. J. Schaff, and B. Monemar Superlattices and Microstructures 36, 573-580 (2004) [View PDF (331 kB)]
	127.		Deformation potentials of the E1(TO) and E2 modes of InN V. Darakchieva, P. P. Paskov, E. Valcheva, T. Paskova, B. Monemar, M. Schubert, H. Lu, and W. J. Schaff Appl. Phys. Lett. 84, 3636 (2004)
	126.		Strain evolution and phonons in AlN/GaN superlattices V. Darakchieva, P. P. Paskov, M. Schubert, E. Valcheva, T. Paskova, H. Arwin, B. Monemar, H. Amano, and I. Akasaki Mat. Res. Soc. Symp. 798, Y5.60 (2004)
	125.		Optical and structural characteristics of virtually unstrained bulk-like GaN D. Gogova, A. Kasic, H. Larsson, B. Pécz, R. Yakimova, B. Magnusson, B. Monemar, F. Tuomisto, K. Saarinen, C. R. Miskys, M. Stutzmann, C. Bundesmann, and M. Schubert Jpn. J. Appl. Phys. 43, 1264 (2004)
	124.		Strain-free bulk-like GaN grown by hydride-vapor-phase-epitaxy on two-step epitaxial lateral overgrown GaN template D. Gogova, A. Kasic, H. Larsson, C. Hemmingsson, B. Monemar, F. Tuomisto, K. Saarinen, L. Dobos, B. Pécz, P. Gibart, and B. Beaumont J. Appl. Phys. 96, 799-906 (2004)
	123.		Characterization of high-quality free-standing GaN grown by HVPE D. Gogova, A. Kasic, H. Larsson, B. Pécz, R. Yakimova, I. G. Ivanov, and B.Monemar Physica scripta , accepted (2004)
	122.		X-Ray Investigations of the intrinsic Carbon-Incorporation during the MOVPE Growth of AlGaAs V. Gottschalch, G. Leibiger, and D. Spemann Z. Anorg. Allg. Chemie 630, 1419-1422 (2004) [View PDF (92 kB)]
	121.		Intrinsic carbon doping of (AlGa)As for (InGa)As laser structures (~1.17 mm) V. Gottschalch, G. Leibiger, G. Benndorf, H. Herrnberger, and D. Spemann J. Cryst. Growth 272, 642 (2004) [View PDF (265 kB)]
	120.		Facet coating of edge emitting 1.2 µm-wavelength (InGa)As laser diodes T. Gühne, V. Gottschalch, G. Leibiger, H. Herrnberger, J. Kovac, J. Kovac jr., R. Schmidt-Grund, and B. Rheinländer Proceedings of the 28th Workshop on Compound Semiconductor Devices and Integrated Circuits Europe , WOCSDICE (2004) [View PDF (1.5 MB)]
	119.		Far-Infrared Dielectric Function and Phonon Modes of Sponateously Ordered (AlxGa1-x)0.52In0.48P T. Hofmann, M. Schubert, and V. Gottschalch Thin Solid Films 455-456, 601-604 (2004) [View PDF (154 kB)] [DOI-link]
	118.		Protein adsorption in porous silicon gradients monitored by spatially-resolved spectroscopic ellipsometry L. M. Karlsson, M. Schubert, N. Ashkenov, and H. Arwin Thin Solid Films 455-456, 726-730 (2004) [View PDF (386 kB)] [DOI-link]
	117.		Micro-Raman scattering profiling studies on HVPE-grown free-standing GaN A. Kasic, D. Gogova, H. Larsson, C. Hemmingsson, I. Ivanov, B. Monemar, C. Bundesmann, and M. Schubert phys. stat. sol. (a) 201, 2773-2776 (2004) [View PDF (123 kB)]
	116.		Highly homogeneous bulk-like 2´´ GaN grown by HVPE on MOCVD-GaN template A. Kasic, D. Gogova, H. Larsson, I. Ivanov, J. Birch, B. Monemar, M. Fehrer, and V. Härle J. Cryst. Growth , accepted (2004)
	115.		InN dielectric function from the mid-infrared to the ultra-violet range A. Kasic, E. Valcheva, B. Monemar, H. Lu, and W. J. Schaff Phys. Rev. B 70, 115217 (2004) [View PDF (115 kB)]
	114.		Optical properties of Zn1-xMnxSe epilayers determined by spectroscopic ellipsometry J. Kvietkova, B. Daniel, M. Hetterich, M. Schubert, D. Spemann, P. Pfundstein, and D. Gerthsen Thin Solid Films 455-456, 228-230 (2004) [View PDF (133 kB)] [DOI-link]
	113.		Near-band-gap dielectric function of Zn1-xMnxSe thin films determined by spectroscopic ellipsometry J. Kvietkova, B. Daniel, M. Hetterich, M. Schubert, D. Spemann, D. Litvinov, and D. Gerthsen Phys. Rev. B 70, 045316 (2004)
	112.		Hydrogen implantation in InGaNAs studied by spectroscopic ellipsometry G. Leibiger, V. Gottschalch, N. Razek, A. Schindler, and M. Schubert Thin Solid Films 455-456, 231-234 (2004) [View PDF (106 kB)] [DOI-link]
	111.		Solar cells with (BGaIn)As and (InGa)(NAs) as absorption layers G. Leibiger, C. Krahmer, J. Bauer, H. Herrnberger, and V. Gottschalch J. Cryst. Growth 272, 732 (2004) [View PDF (244 kB)]
	110.		Infrared to Vacuum Ultraviolet Optical Properties of 3C, 4H and 6H Silicon Carbide Measured by Spectroscopic Ellipsometry O. P. A. Lindquist, Schubert, H. Arwin, and K. Järrendahl Thin Solid Films 455-456, 235-238 (2004) [View PDF (116 kB)] [DOI-link]
	109.		Advances of pulsed laser deposition of ZnO thin films M. Lorenz, H. Hochmuth, R. Schmidt-Grund, E.M. Kaidashev, and M. Grundmann Ann. Phys. 13, 59-61 (2004) [View PDF (131 kB)]
	108.		Radiative recombination processes in Al0.07Ga0.93N/GaN multiple quantum well structures, role of hole localisation B. Monemar, H. Haradizadeh, P. P. Paskov, J. P. Bergman, E. Valcheva, B. Arnadov, A. Kasic, P. O. Holtz, G. Pozina, S. Kamiyama, M. Iwaya, H. Amano, and I. Akasaki phys. stat. sol. (c) 1, 2500 (2004)
	107.		Polar and nonpolar GaN grown by HVPE: Preferable substrates for nitride-based emitting devices T. Paskova, P. P. Paskov, E. Valcheva, V. Darakchieva, J. Birch, A. Kasic, B. Arnaudov, S. Tungasmita, and B. Monemar phys. stat. sol. (a) 201, 2265 (2004) [View PDF (275 kB)]
	106.		Optical modelling of a layered photovoltaic device with a polyfluorene-copolymer as the active layer Nils-Krister Persson, M. Schubert, and O. Inganäs Solar Energy Materials and Solar Cells 83, 169-186 (2004) [DOI-link]
	105.		UV-VUV Spectroscopic ellipsometry of ternary MgxZn1-xO (x<0.53) thin films R. Schmidt-Grund, M. Schubert, B. Rheinländer, D. Fritsch, H. Schmidt, E. M. Kaidashev, M. Lorenz, C. M. Herzinger, and M. Grundmann Thin Solid Films 455-456, 500-504 (2004) [View PDF (259 kB)]
	104.		Carrier redistribution in organic/inorganic (poly(3,4-ethylenedioxy thiophene/poly(styrenesulfonate)polymer)-Si) heterojunction determined from infrared ellipsometry M. Schubert, C. Bundesmann, H. v. Wenckstern, G. Jakopic, A. Haase, N.-K. Persson, F. Zhang, H. Arwin, and O. Inganäs Appl. Phys. Lett. 84, 1311-1313 (2004) [View PDF (63 kB)]
	103.		Infrared dielectric function and vibrational modes of pentacene thin films M. Schubert, C. Bundesmann, G. Jakopic, and H. Arwin Appl. Phys. Lett. 84, 200-202 (2004) [View PDF (54 kB)]
	102.		Infrared ellipsometry characterization of conducting thin organic films M. Schubert, C. Bundesmann, G. Jakopic, H. Maresch, H. Arwin, N.-C. Persson, F. Zhang, and O. Inganäs Thin Solid Films 455-456, 295-300 (2004) [View PDF (136 kB)] [DOI-link]
	101.		Generalized ellipsometry for orthorhombic, absorbing materials: Dielectric functions, phonon modes, and band-to-band transitions of Sb2S3 M. Schubert, T. Hofmann, C. M. Herzinger, and W. Dollase Thin Solid Films 455-456, 619-623 (2004) [DOI-link]
	100.		Far-infrared magnetooptic generalized ellipsometry: determination of free-charge-carrier parameters in semiconductor thin film structures M. Schubert, T. Hofmann, and C. M. Herzinger Thin Solid Films 455-456, 563-570 (2004) [View PDF (239 kB)] [DOI-link]
	99.		Electro-optical properties of ZnO-BaTiO3-ZnO heterostructures grown by pulsed laser deposition M. Schubert, N. Ashkenov, T. Hofmann, H. Hochmuth, M. Lorenz, M. Grundmann, and G. Wagner Ann. Phys. 13, 61-62 (2004) [View PDF (213 kB)] [DOI-link]
	98.		Mie-resonances, infrared emission, and band gap of InN T. V. Shubina, S. V. Ivanov, V. N. Jmerik, D. D. Solnyshkov, V. A. Vekshin, P. S. Kop´ev, A. Vasson, J. Leymarie, A. Kavokin, H. Amano, K. Shimono, A. Kasic, and B. Monemar Phys. Rev. Lett. 92, 117407 (2004) [View PDF (592 kB)]
	97.		Enhanced weak Anderson localization phenomena in the magnetoresistance of n-type (Ga,In)(N,As) J. Teubert, P. J. Klar, W. Heimbrodt, K. Volz, W. Stolz, P. Thomas, G. Leibiger, and V. Gottschalch Appl. Phys. Lett. 84, 747 (2004) [View PDF (83 kB)]
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	2003:
	96.		Infrared dielectric functions and phonon modes of high-quality ZnO films N. Ashkenov, B. N. Mbenkum, C. Bundesmann, V. Riede, M. Lorenz, E. M. Kaidashev, A. Kasic, M. Schubert, M. Grundmann, G. Wagner, and H. Neumann J. Appl. Phys. 93, 126 (2003) [View PDF (189 kB)]
	95.		Raman scattering in ZnO thin films doped with Fe, Sb, Ga and Li C. Bundesmann, N. Ashkenov, M. Schubert, D. Spemann, T. Butz, M. Lorenz, E. M. Kaidashev, and M. Grundmann Appl. Phys. Lett. 83, 1974-1976 (2003) [View PDF (59 kB)]
	94.		Metalorganic chemical vapor phase epitaxy of gallium-nitride on silicon A. Dadgar, A. Strittmatter, J. Bläsing, M. Poschenrieder, O. Contreras, P. Veit, T. Riemann, F. Bertram, A. Reiher, A. Krtschil, A. Diez, T. Hempel, T. Finger, A. Kasic, M. Schubert, D. Bimberg, F. A. Ponce, J. Christen, and A. Krost phys. stat. sol. (c) 0, 1583-1606 (2003) [View PDF (3.1 MB)]
	93.		Residual strain in HVPE GaN free-standing and re-grown homoepitaxial layers V. Darakchieva, T. Paskova, P.P. Paskov, B. Monemar, N. Ashkenov, and M. Schubert phys. stat. sol. (a) 195, 516-522 (2003) [View PDF (484 kB)]