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People Research Publications   - Papers   - Postergallery   - Conferences Teaching Internal Links News	Home > Publications > Papers Papers Papers:       2009   2008   2008   2007   2006   2005   2004   2003   2002   2001   2000   1999   1998   1997   1996   1995   Electronic documents are intended for internal use only. Corrections are added for misprints where known. Search in our Publication Database:        Articles in submission:     233. Role of impurities and dislocations for the unintentional n-type conductivity in InN V. Darakchieva, E. Alves, M.-Y. Xie, N. P. Barradas, K. Lorenz, M. Schubert, P.O.ºA. Persson, F. Giuliani, F. Munnik, C.-L. Hsiao, L.-C. Chen, and W. J. Schaff Phy. B , (2009) [View PDF (630 kB)]     232. Terahertz Mueller matrix ellipsometry using a Smith-Purcell radiation source T. Hofmann, C. M. Herzinger, M. Mross, T. Lowell, and M. Schubert Rev. Sci. Inst. , (2008)     231. Ab-initio calculations and ellipsometry measurements of the optical properties of the layered semiconductor In4Se3 L. Makinistian, E.A. Albanesi, N.V. Gonzalez Lemus, A.G. Petukhov, D. Schmidt, E. Schubert, M. Schubert, Ya.B. Losovyj, P. Galiy, and P. Dowben Phys. Rev. B xx, xx (2009)     230. In-situ Spectroscopic Ellipsometry and Quartz Crystal Microbalance Monitoring of Synperonic Polymer Thin Film Porosity Formation in Aqueous Environment A. Sarkar, T. Viitala, T. Hofmann, T. E. Tiwald, J. A. Woollam, A. Kjerstad and B. Laderian, and M. Schubert Langmuir , (2009)     229. Magneto-optical Properties of Cobalt Slanted Columnar Thin Films D. Schmidt, T. Hofmann, E. Schubert, and M. Schubert Appl. Phys. Lett. xx, xx (2009)     228. Characterizing antireflection coatings on textured mono-crystalline Si with spectroscopic ellipsometry J. Sun, M. F. Saenger, M. Schubert, J. N. Hilfiker, R. Synowicki, C. M. Herzinger, and J. A. Woollam IEEE 34th PVSC Proc. , (2009) top     2009:     227. Annealing effects on the optical properties of semiconducting boron carbide R.B. Billa, T. Hofmann, M. Schubert, and B.W. Robertson J. Appl. Phys. 106, 033515 (2009) [View PDF (239 kB)] [DOI-link]     226. Free electron behavior in InN: on the role of dislocations and surface electron accumulation V. Darakchieva, T. Hofmann, M. Schubert, B. E. Sernelius, B. Monemar, P. O. A. Persson, F. Giuliani, E. Alves, H. Lu, and W. J. Schaff Appl. Phys. Lett. 94, 022109 (2009) [View PDF (200 kB)] [DOI-link]     225. Electron accumulation at nonpolar and semi-polar surfaces of wurtzite InN from generalized infrared ellipsometry V. Darakchieva, M. Schubert, T. Hofmann, B. Monemar, Y. Takagi, and Y. Nanishi Appl. Phys. Lett. , (2009)     224. Terahertz Ellipsometry Using Electron-Beam Based Sources T. Hofmann, C. M. Herzinger, U. Schade, M. Mross, J. A. Woollam, and M. Schubert Mat. Res. Soc. Symp. 1108, A08-04 (2009) [DOI-link]     223. Hole diffusion profile in a p-p+ Silicon homojunction determined by terahertz and mid-infrared spectroscopic ellipsometry T. Hofmann, C.M. Herzinger, T.E. Tiwald, J.A. Woollam, and M. Schubert Appl. Phys. Lett. 95, 032102 (2009) [View PDF (230 kB)] [DOI-link]     222. Materials Characterization using THz Ellipsometry T. Hofmann, C.M. Herzinger, J.A. Woollam, and M. Schubert Mat. Res. Soc. Symp. Proc. 1163E, 1163-K08-04 (2009)     221. Infrared ellipsometric characterization of silicon nitride films on textured Si photovoltaic cells M. F. Saenger, M. Schädel, T. Hofmann, J. Hilfiker, J. Sun, T. Tiwald, M. Schubert, and J. A. Woollam Mat. Res. Soc. Symp. Proc. 1123, P02-02 (2009) [DOI-link]     220. Spectroscopic ellipsometry characterization of SiNx antireflection films on textured multicrystalline and monocrystalline silicon solar cells M. F. Saenger, J. Sun, M. Schädel, J. Hilfiker, M. Schubert, and J. A. Woollam Thin Solid Films , (2009)     219. In-situ Determination Of Water Content Of Synperonic Thin Film By Simultaneous Quartz Crystal Microbalance And Ellipsometry Measurements A. Sarkar, T. Viitala, T. Hofmann, T.E. Tiwald, J.A. Woollam, A. Kjerstad, B. Laderian, and M. Schubert Mat. Res. Soc. Symp. 1146E, 1146-NN09-02 (2009) [View PDF (216 kB)]     218. Monoclinic optical constants, birefringence, and dichroism of slanted titanium nanocolumns determined by generalized ellipsometry D. Schmidt, B. Booso, T. Hofmann, E. Schubert, A. Sarangen, and M. Schubert Appl. Phys. Lett. 94, 011914 (2009) [View PDF (381 kB)] [DOI-link]     217. Optical and magnetic properties of Co nanostructure thin films D. Schmidt, T. Hofmann, A. C. Kjerstad, M. Schubert, and E. Schubert Mat. Res. Soc. Symp. Proc. 1142, 1142-JJ09-04 (2009) [View PDF (502 kB)] [DOI-link]     216. Optical, structural, and magnetic properties of cobalt nanostructure thin films D. Schmidt, A. C. Kjerstad, T. Hofmann, R. Skomski, E. Schubert, and M. Schubert J. Appl. Phys. 105, 113508 (2009) [View PDF (656 kB)] [DOI-link]     215. Generalized ellipsometry for monoclinic absorbing materials: determination of optical constants of Cr columnar thin films D. Schmidt, B. Booso, T. Hofmann, E. Schubert, A. Sarangan, and M. Schubert Opt. Lett. 34, 992 (2009) [View PDF (300 kB)] [DOI-link]     214. Interface-charge-coupled polarization response of Pt-ZnO-BaTiO3-ZnO-Pt heterostructures: Three-layer model expansion V. M. Voora, T. Hofmann, M. Brandt, M. Lorenz, M. Grundmann, and M. Schubert Mat. Res. Soc. Symp. Proc. 1110, 1110-C06-14 (2009) [View PDF (177 kB)] [DOI-link]     213. Resistive hysteresis and interface charge coupling in BaTiO3-ZnO heterostructures V. M. Voora, T. Hofmann, M. Brandt, M. Lorenz, M. Grundmann, N. Ashkenov, and M. Schubert Appl. Phys. Lett. 94, 142904 (2009) [View PDF (536 kB)] [DOI-link]     212. Electrical properties of ZnO-BaTiO3-ZnO heterostructures with asymmetric interface charge distribution V. M. Voora, T. Hofmann, M. Brandt, M. Lorenz, M. Grundmann, N. Ashkenov, and M. Schubert Appl. Phys. Lett. 95, 082902 (2009) [View PDF (595 kB)] [DOI-link] top     2008:     211. Lattice parameters of bulk GaN fabricated by halide vapor phase epitaxy V. Darakchieva, B. Monemar, A. Usui, M. F. Saenger, and M. Schubert J. Cryst. Growth 310, 959-965 (2008) [DOI-link]     210. Kramers-Kronig-consistent optical functions of anisotropic crystals: generalized spectroscopic ellipsometry on pentacene M. Dressel, B. Gompf, D. Faltermeier, A. K. Tripathi, J. Pflaum, and M. Schubert Opt. Express 16, 19770 (2008) [View PDF (265 kB)] [DOI-link]     209. Optical Hall-effect in hexagonal InN T. Hofmann, V. Darakchieva, B. Monemar, H. Lu, W. J. Schaff, and M. Schubert J. Electron. Mater 37, 611-615 (2008) [View PDF (420 kB)] [DOI-link]     208. Infrared behavior of aluminum nanostructure sculptured thin films T. Hofmann, M. Schubert, D. Schmidt, and E. Schubert Mat. Res. Soc. Symp. Proc. 1080E, 1080-O04-16 (2008) [View PDF (598 kB)]     207. The optical Hall effect T. Hofmann, C.M. Herzinger, C. Krahmer, K. Streubel, and M. Schubert phys. stat. sol. (a) 205, 779 (2008) [View PDF (2.7 MB)] [DOI-link]     206. Optical Hall effect studies on modulation-doped AlxGa1-xAs:Si/GaAs quantum wells T. Hofmann, C. von Middendorff, V. Gottschalch, and M. Schubert phys. stat. sol. (c) 5, 1386 - 1390 (2008) [View PDF (407 kB)] [DOI-link]     205. Characterization of an optically pumped ZnO-based 3rd order distributed feedback laser D. Hofstetter, Y. Bonetti, E. BaumannF, R. Giorgetta, A.-H. El-Shaer, A. Bakin, A. Waag, R. Schmidt-Grund, M. Grundmann, and M. Schubert SPIE Vol. 6895, 68950J (2008) [DOI-link]     204. In-situ monitoring of the p- and n-type doping in AlGaInP C. Krahmer, A. Behres, M. Schubert, and K. Streubel J. Cryst. Growth 310, 4727 (2008) [DOI-link]     203. Polaron transitions in charge intercalated amorphous tungsten oxide thin films M. F. Saenger, T. Höing, T. Hofmann, and M. Schubert phys. stat. sol. (a) 205, 914 (2008) [View PDF (379 kB)] [DOI-link]     202. Dielectric and magnetic birefringence in low-chlorine-doped n-type Zn1-xMnxSe M. F. Saenger, M. Hetterich, R. D. Kirby, D. J. Sellmyer, and M. Schubert phys. stat. sol. (c) 5, 1007 (2008) [View PDF (500 kB)] [DOI-link]     201. Polaron and Phonon properties in proton intercalated amorphous tungsten oxide thin films M. F. Saenger, T. Höing, B. W. Robertson, R. B. Billa, T. Hofmann, E. Schubert, and M. Schubert Phys. Rev. B 75, 245205 (2008) [View PDF (987 kB)] [DOI-link]     200. Vacuum Ultraviolet Dielectric Function and Band Structure of ZnO R. Schmidt-Grund, B. Rheinländer, E. M. Kaidashev, M. Lorenz, M. Grundmann, D. Fritsch, M. Schubert, H. Schmidt, and C. M. Herzinger Journal of the Korean Physical Society 53, 88-93 (2008) [View PDF (568 kB)]     199. Generalized Ellipsometry Determination of Non-reciprocity in Chiral Silicon Sculptured Thin Films D. Schmidt, E. Schubert, and M. Schubert phys. stat. sol. (a) 205, 748 (2008) [View PDF (1.0 MB)] [DOI-link]     198. Epitaxial Deposition of SiC onto 4H SiC using a Hollow Cathode R. J. Soukup, N. J. Ianno, J. L. Huguenin-Love, N. T. Lauer, T. Hofmann, and Z. Hubicka ECS Transactions 16, 201 - 210 (2008)     197. Investigation of the free charge carrier properties at the ZnO sapphire interface in a-plane ZnO films studied by generalized infrared ellipsometry Ch. Sturm, T. Chavdarov, R. Schmidt-Grund, B. Rheinlaeander, C. Bundesmann, H. Hochmuth, M. Lorenz, M. Schubert, and M. Grundmann phys. stat. sol. (c) , (2008) [View PDF (392 kB)] [DOI-link]     196. Interface-charge-coupled polarization response of Pt-BaTiO3-ZnO-Pt heterojunctions: A physical model approach V. M. Voora, T. Hofmann, M. Brandt, M. Lorenz, M. Grundmann, N. Ashkenov, and M. Schubert J. Electron. Mater 37, 1029-1034 (2008) [View PDF (397 kB)] [DOI-link]     195. Interface-charge-coupled polarization response model of Pt-BaTiO3-ZnO-Pt heterojunctions: Physical parameters variation V. M. Voora, T. Hofmann, A. C. Kjerstad, M. Brandt, M. Lorenz, M. Grundmann, and M. Schubert Mat. Res. Soc. Symp. Proc. 1074E, 1074-I01-11 (2008) [View PDF (87 kB)]     194. Electrooptic ellipsometry study of piezoelectric BaTiO3-ZnO heterostructures V. M. Voora, T. Hofmann, M. Brandt, M. Lorenz, M. Grundmann, and M. Schubert phys. stat. sol. (c) 5, 1328 (2008) [View PDF (433 kB)] [DOI-link] top     2007:     193. Dielectric constants and phonon modes of amorphous hafnium aluminate deposited by metal organic chemical vapor deposition C. Bundesmann, O. Buiu, S. Hall, and M. Schubert Appl. Phys. Lett. 91, 121916 (2007) [View PDF (139 kB)] [DOI-link]     192. Anisotropic strain and phonon deformation potentials in GaN V. Darakchieva, T. Paskova, M. Schubert, H. Arwin, P. P. Paskov, B. Monemar, D. Homme, M. Heuken, J. Off, F. Scholz, B. A. Haskell, P. T. Fini, J. S. Speck, and S. Nakamura Phys. Rev. B 75, 195217 (2007) [View PDF (850 kB)] [DOI-link]     191. Effect of anisotropic strain on phonons in a-plane and c-plane GaN layers V. Darakehieva, T. Paskova, M. Schubert, P. P. Paskov, H. Arwin, B. Monemar, D. Hommel, M. Heuken, J. Off, B. A. Haskell, P. T. Fini, J. S. Speck, and S. Nakamura J. Cryst. Growth 300, 233-238 (2007) [DOI-link]     190. Electron effective mass and phonon modes in GaAs incorporating boron and indium T. Hofmann, M. Schubert, G. Leibiger, and V. Gottschalch Appl. Phys. Lett. 90, 182110 (2007) [View PDF (96 kB)] [DOI-link]     189. Dielectric anisotropy and phonon modes of ordered indirect-gap Al0.52In0.48P studied by far-infrared ellipsometry T. Hofmann, V. Gottschalch, and M. Schubert Appl. Phys. Lett. 91, 121908 (2007) [View PDF (217 kB)] [DOI-link]     188. Demonstration of an ultraviolet ZnO-based optically pumped third order distributed feedback laser D. Hofstetter, Y. Bonetti,, F. R. Giorgetta, A-H El-Shaer, A. Bakin, A. Waag, R. Schmidt-Grund, M. Schubert, and M. Grundmann Appl. Phys. Lett. 91, 111108 (2007) [View PDF (423 kB)] [DOI-link]     187. MOVPE growth investigations of doping and ordering in AlGaAs and GaInP with reflectance anisotropy spectroscopy C. Krahmer, M. Philippens, M. Schubert, and K. Streubel J. Cryst. Growth 298, 18-22 (2007) [DOI-link]     186. Polarization coupling in epitaxial ZnO / BaTiO3 thin film heterostructures on SrTiO3 (100) substrates M. Lorenz, M. Brandt, J. Schubert, H. Hochmuth, H. von Wenckstern, M. Schubert, and M. Grundmann SPIE Vol. 6474, 64741S (2007) [DOI-link]     185. Ion beam assisted growth of sculptured thin films: Structure alignment and optical fingerprints E. Schubert, F. Frost, H. Neumann, B. Rauschenbach, B. Fuhrmann, F. Heyroth, J. Rivory, B. Gallas, and M. Schubert Adv. Solid State Phys. 46, 309-320 (2007) [DOI-link] top     2006:     184. Phonon properties and doping of ZnMnSe epilayers grown by molecular beam epitaxy K. C. Agarwal, B. Daniel, T. Hofmann, M. Schubert, C. Klingshirn, and M. Hetterich phys. stat. sol. b 243, 914 (2006) [DOI-link]     183. Infrared optical properties of MgxZn1-xO thin films: Long-wavelength optical phonons and dielectric constants C. Bundesmann, A. Rahm, M. Lorenz, M. Grundmann, and M. Schubert J. App. Phys. 99, 113504 (2006) [View PDF (339 kB)] [DOI-link]     182. Phonon modes, dielectric constants, and exciton mass parameters in ternary MgxZn1-xO C. Bundesmann, M. Lorenz, M. Grundmann, and M. Schubert Mat. Res. Soc. Symp. Proc. 928E, GG05-03 (2006)     181. Assessment of phonon mode characteristics via infrared spectroscopic ellipsometry on a-plane GaN V. Darakchieva, T. Paskova, P. P. Paskov, H. Arwin, M. Schubert, B. Monemar, S. Figge, D. Hommel, B. A. Haskell, P. T. Fini, and S. Nakamura phys. stat. sol. b 243, 1594-1598 (2006) [DOI-link]     180. Properties of (InGa)As/GaAs QW (\lamda~1.2µm) Facet-Coated Edge Emitting Diode Laser T. Gühne, V. Gottschalch, G. Leibiger, H. Herrnberger, J. Kovác, J. Kovác, Jr., R. Schmidt-Grund, B. Rheinländer, and D. Pudis Laser Physics 16, 441-446 (2006) [View PDF (75 kB)] [DOI-link]     179. Low temperature photoluminescence and infrared dielectric functions of pulsed laser deposited ZnO thin films on silicon S. Heitsch, C. Bundesmann, G. Wagner, G. Zimmermann, A. Rahm, H. Hochmuth, G. Benndorf, H. Schmid t, M. Schubert, M. Lorenz, and M. Grundmann Thin Solid Films 496, 234-239 (2006) [View PDF (351 kB)] [DOI-link]     178. Conduction-band electron effective mass in Zn0.87Mn0.13Se measured by terahertz and far-infrared magnetooptic ellipsometry T. Hofmann, U. Schade, K. C. Agarwal, B. Daniel, C. Klingshirn, M. Hetterich, C. M. Herzinger, and M. Schubert Appl. Phys. Lett. 88, 042105 (2006) [View PDF (85 kB)] [DOI-link]     177. Terahertz magnetooptic generalized ellipsometry using synchrotron and black-body radiation T. Hofmann, U. Schade, W. Eberhardt, C. M. Herzinger, P. Esquinazi, and M. Schubert Rev. Sci. Inst. 77, 063902 (2006) [View PDF (313 kB)] [DOI-link]     176. Anisotropy of the Gamma-point effective mass and mobility in hexagonal InN T. Hofmann, T. Chavdarov, V. Darakchieva, H. Lu, W.J. Schaff, and M. Schubert phys. stat. sol. c 3, 1854-1857 (2006) [View PDF (252 kB)] [DOI-link]     175. Terahertz magnetooptic generalized ellipsometry using synchrotron and black-body radiation T. Hofmann, U. Schade, C. M. Herzinger, P. Esquinazi, and M. Schubert SPIE Vol. 6120, 88-94 (2006) [DOI-link]     174. Cathodoluminescence of large-area PLD grown ZnO thin films measured in transmission and reflection R. Johne, M. Lorenz, H. Hochmuth, J. Lenzner, H. von Wenckstern, G. Zimmermann, H. Schmidt, R. Schmidt-Grund, and M. Grundmann Appl. Phys. A 88, 89 (2006) [DOI-link]     173. In-situ monitoring of MOVPE growth with Reflectance Anisotropy Spectroscopy in an industrial used multi wafer reactor C. Krahmer, M. Philippens, M. Schubert, and K. Streubel phys. stat. sol. c 3, 655-658 (2006) [DOI-link]     172. RBS studies on coated micro-dimensional glass fibers used as micro-resonators Ch. Meinecke, J. Vogt, R. Schmidt-Grund, and T. Butz Nucl. Instr. and Meth. B 249, 387-389 (2006) [View PDF (183 kB)]     171. Effect of high-temperature annealing on the residual strain and bending of freestanding GaN films grown by hydride vapor phase epitaxy T. Paskova, D. Hommel, P. P. Paskov, V. Darakchieva, B. Monemar, M. Bockowski, T. Suski, I. Grzegory, F. Tuomisto, K. Saarinen, N. Ashkenov, and M. Schubert Appl. Phys. Lett. 88, 141909 (2006) [DOI-link]     170. Bending in HVPE GaN free-standing films: effects of laser lift-off, polishing and high-pressure annealing T. Paskova, V. Darakchieva, P. P. Paskov, B. Monemar, M. Bukowski, T. Suskiand N. Ashkenov, M. Schubert, and D. Hommel phys. stat. sol. c 3, 1475 (2006) [DOI-link]     169. Cylindric resonators with coaxial Bragg reflectors R. Schmidt-Grund, T. Gühne, H. Hochmuth, B. Rheinländer, A. Rahm, V. Gottschalch, J. Lenzner, and M. Grundmann SPIE Vol. 6038, 603827 (2006) [View PDF (1.7 MB)] [DOI-link]     168. Refractive indices and band-gap properties of rocksalt MgxZn1-xO (0.68 < x < 1) R. Schmidt-Grund, A. Carstens, B. Rheinländer, D. Spemann, H. Hochmut, G. Zimmermann, M. Lorenz, M. Schubert, C. M. Herzinger, and M. Grundmann J. App. Phys. 99, 123701 (2006) [View PDF (183 kB)] [DOI-link]     167. ZnO micro-pillar resonators with coaxial Bragg reflectors R. Schmidt-Grund, B. Rheinländer, T. Gühne, H. Hochmuth, V. Gottschalch, A. Rahm, J. Lenzner, and M. Grundmann AIP Conf. Proc. 893, 1137 (2006) [DOI-link]     166. Temperature-dependence of the refractive index and the optical transitions at the fundamental band-gap of ZnO R. Schmidt-Grund, N. Ashkenov, M. M. Schubert, W. Czakai, D. Faltermeier, G. Benndorf, H. Hochmuth, M. Lorenz, and M. Grundmann AIP Conf. Proc. 893, 271 (2006) [DOI-link]     165. Another century of ellipsometry (Special issue on Paul Karl Ludwig Drude) M. Schubert Annalen der Physik 15, 480-497 (2006) [View PDF (1.8 MB)] [DOI-link]     164. Recrystallization behavior in chiral sculptured thin films from silicon E. Schubert, J. Fahlteich, B. Rauschenbach, M. Schubert, M. Lorenz, M. Grundmann, and G. Wagner J. Appl. Phys. 100, 016107 (2006) [DOI-link]     163. Optical Properties of Cylindrite C. Sturm, R. Schmidt-Grund, R. Kaden, H. von Wenckstern, B. Rheinländer, K. Bente, and M. Grundmann AIP Conf. Proc. 893, 1483 (2006) [DOI-link]     162. Metal-insulator transition in Co-doped ZnO: Magnetotransport properties Qingyu Xu, Lars Hartmann, Heidemarie Schmidt, Holger Hochmuth, Michael Lorenz, Rüdiger Schmidt-Grund, Chris Sturm, Daniel Spemann, and Marius Grundmann Phys. Rev. B 73, 205342 (2006) [View PDF (155 kB)] [DOI-link]     161. Magnetoresistance effects in Zn(0.90)Co(0.10)O films Qingyu Xu, Lars Hartmann, Heidemarie Schmidt, Holger Hochmuth, Michael Lorenz, Rüdiger Schmidt-Grund, Daniel Spemann, and Marius Grundmann J. Appl. Phys. 100, 013904 (2006) [View PDF (90 kB)] [DOI-link]     160. Magnetoresistance in pulsed laser deposited 3d transition metal doped ZnO films Qingyu Xu, Lars Hartmann, Heidemarie Schmidt, Holger Hochmuth, Michael Lorenz, Rüdiger Schmidt-Grund, Daniel Spemann, Andreas Rahm, and Marius Grundmann Thin Solid Films 515, 2549 (2006) [View PDF (283 kB)] [DOI-link]     159. The magnetotransport properties of Co-doped ZnO films Q. Xu, L. Hartmann, H. Schmidt, H. Hochmuth, M. Lorenz, R. Schmidt-Grund, C. Sturm, D. Spemann, and M. Grundmann AIP Conf. Proc. 893, 1187 (2006) [DOI-link] top     2005:     158. Rectifying semiconductor-ferro electric polarization loops and offsets in Pt-BaTiO3-ZnO-Pt thin film capacitor structures N. Ashkenov, M. Schubert , E. Twerdowski , H. von Wenckstern, B. N. Mbenkum, H. Hochmuth, M. Lorenz, W. Grill, and M. Grundmann Thin Solid Films 486, 153-157 (2005) [View PDF (283 kB)] [DOI-link]     157. Combined Raman scattering, X-ray fluorescence and ellipsometry in-situ growth monitoring of CuInSe2-based photoabsorber layers on polyimide substrates C. Bundesmann, M. Schubert, N. Ashkenov, M. Grundmann, G. Lippold, and J. Piltz AIP Conf. Proc. 772, 165 (2005) [View PDF (594 kB)] [DOI-link]     156. Optische Bestimmung der Eigenschaften freier Ladungsträger in ZnO-Dünnfilmen mittels spektroskopischer Infrarotellipsometrie C. Bundesmann, M. Schubert, H. v. Wenckstern, M. Lorenz, and M. Grundmann Tagungsband des 3. TCO-Workshops des Forschungsverbundes Solarenergie, Freyburg/Unstrut , 34-36 (2005) [View PDF (87 kB)]     155. Structural characteristics and lattice parameters of hydride vapor phase epitaxial GaN free-standing quasisubstrates V. Darakchieva, T. Paskova, P. P. Paskov, B. Monemar, N. Ashkenov, and M. Schubert J. Appl. Phys. 97, 013517 (2005) [View PDF (98 kB)] [DOI-link]     154. Phonon mode behavior of wurtzite AlN/GaN superlattices V. Darakchieva, E. Valcheva, P. P. Paskov, M. Schubert, T. Paskova, B. Monemar, H. Amano, and I. Akasaki Phys. Rev. B 71, 115329 (2005) [DOI-link]     153. Roughness and damage of a GaAs surface after chemically assisted ion beam etching with Cl2/Ar^+ J. Dienelt, K. Zimmer, J. von Sonntag, B. Rauschenbach, and C. Bundesmann Microelectronic Engineering 78-79, 457-463 (2005) [DOI-link]     152. Polarization-dependent optical transitions at the fundamental band gap and higher critical points of wurtzite ZnO D. Fritsch, R. Schmidt-Grund, H. Schmidt, C. M. Herzinger, and M. Grundmann IEEE Proceedings of the 5th Int. Conference on Numerical Simulation of Optoelectronic Devices , 69 (2005) [View PDF (326 kB)] [DOI-link]     151. High-quality 2 '' bulk-like free-standing GaN grown by hydride vapour phase epitaxy on a Si-doped metal organic vapour phase epitaxial GaN template with an ultra low dislocation density D. Gogova, H. Larsson, A. Kasic, G. R. Yazdi, I. Ivanov, R. Yakimova, B. Monemar, E. Aujol, E. Frayssinet, J. P.Faurie, B. Beaumont, and P. Gibart P Jpn. J. Appl. Phys. 44, 1181-1185 (2005) [DOI-link]     150. The inertial-mass scale for free-charge-carriers in semiconductor heterostructures T. Hofmann, M. Schubert, C. von Middendorff, G. Leibiger, V. Gottschalch, C. M. Herzinger, A. Lindsay, and E. O'Reilly AIP Conference Proceedings 772, 455-456 (2005) [DOI-link]     149. Growth and annealing of GaInAsN: density-functional calculations on the reactions of surface and bulk structures A. Jenichen, C. Engler, G. Leibiger, and V. Gottschalch Surface Science 574, 144-152 (2005) [View PDF (282 kB)] [DOI-link]     148. Nitrogen substitutions in GaAs(001) surfaces: Density-functional supercell calculations of the surface stability A. Jenichen, C. Engler, G. Leibiger, and V. Gottschalch phys. stat. sol. (b) 242, 2820-2832 (2005) [DOI-link]     147. Performance of III-nitride epitaxy in a low V-to-III gas-flow ratio under nitrogen ambient in a hot-wall MOCVD system A. Kakanakova-Georgieva, A. Kasic, C. Hallin, B. Monemar, and E. Janzén phys. stat. sol. (c) 2, 960-963 (2005) [View PDF (167 kB)] [DOI-link]     146. Adsorption of human serum albumin in porous silicon gradients monitored by spatially-resolved spectroscopic ellipsometry L. M. Karlsson, M. Schubert, N. Ashkenov, and H. Arwin phys. stat. sol. (c) 2, 3293 - 3297 (2005) [View PDF (230 kB)] [DOI-link]     145. Characterization of crack-free relaxed GaN grown on 2''-sapphire A. Kasic, D. Gogova, H. Larsson, I. Ivanov, C. Hemmingsson, R. Yakimova, B. Monemar, and M. Heuken J. Appl. Phys. 98, 073525 (2005) [View PDF (364 kB)] [DOI-link]     144. Luminescence of ZnO thin films grown by pulsed laser deposition on 3C-SiC buffered Si M. Lorenz, H. Hochmuth, A. Jammoul, G. Ferro, Ch. Förster, J. Pezoldt, J. Perez, G. Benndorf, J. Lenzner, R. Schmidt-Grund, and M. Grundmann Wissenschaftlich Technische Berichte des Forschungszentrums Rossendorf FZR 433, 74 (2005) [View PDF (550 kB)]     143. Composition and properties of ZnS thin films prepared by chemical bath deposition from acid and basic solutions L. V. Mahkova, I. Konovalov, R. Szargan, N. Ashkenov, M. Schubert, and T. Chassé phys. stat. sol. (c) 2, 1206 - 1211 (2005) [DOI-link]     142. Electro-optic Raman observation of low temperature phase transitions in ZnO-BaTiO3-ZnO heterostructures B. N. Mbenkum, N. Ashkenov, M. Schubert, and M. Lorenz AIP Conf. Proc. 772, 401-402 (2005) [DOI-link]     141. Temperature-dependent dielectric and electro-optic properties of a ZnO-BaTiO3-ZnO heterostructure grown by pulsed-laser deposition B. N. Mbenkum, N. Ashkenov, M. Schubert, M. Lorenz, H. Hochmuth, D. Michel, M. Grundmann, and G. Wagner Appl. Phys. Lett. 86, 091904 (2005) [View PDF (130 kB)] [DOI-link]     140. Optical properties of InN - the bandgap question B. Monemar, P. P. Paskov, and A. Kasic Superlattices and microstructures 38, 38-56 (2005) [View PDF (1.1 MB)] [DOI-link]     139. Growth of thick GaN layers by hydride vapor phase epitaxy B. Monemar, T. Paskova, C. Hemmingsson, H. Larsson, P. P. Paskov, I. G. Ivanov, and A. Kasic JOURNAL OF CERAMIC PROCESSING RESEARCH 6, 153-162 (2005)     138. High pressure annealing of HVPE GaN free-standing films: redistribution of defects and stress T. Paskova, T. Suski, M. Bockowski, P.P. Paskov, V. Darakchieva, B. Monemar, F. Tuomisto, K. Saarinen, N. Ashkenov, M. Schubert, C. Roder, and D. Hommel Mat. Res. Soc. Symp. Proc. 831, E8.18.1 (2005) [View PDF (273 kB)]     137. Band-to-band transitions and optical properties of MgxZn1-xO (0 < x < 1) films R. Schmidt-Grund, D. Fritsch, M. Schubert, B. Rheinländer, H. Schmidt, H. Hochmuth, M. Lorenz, C.M. Herzinger, and M. Grundmann AIP Conf. Proc. 772, 201 (2005) [View PDF (45 kB)] [DOI-link]     136. a-Si/SiOx Bragg-reflectors on micro-structured InP R. Schmidt-Grund, T. Nobis, V. Gottschalch, B. Rheinländer, H. Herrnberger, and M. Grundmann Thin Solid Films 483, 257-260 (2005) [View PDF (238 kB)] [DOI-link]     135. Long-wavelength interface modes in semiconductor layer structures M. Schubert, T. Hofmann, and J. Sik Phys. Rev. B 71, 035324 (2005) [View PDF (382 kB)] [DOI-link]     134. Lichtstarke kompakte in-situ Ramansonde M. Schubert, C. Bundesmann, and G. Lippold Patent application , DE 10 2004 006 391 A1 (2005) [View PDF (165 kB)]     133. Erratum: Mie resonances, infrared emission, and the band gap of InN (vol 92, pg 117407, 2004) T. V. Shubina, S. V. Ivanov V. N. Jmerik, D. D. Solnyshkov, V. A. Vekshin, P. S. Kop'ev, A. Vasson, J. Leymarie, A. Kavokin, H. Amano, K. Shimono, A. Kasic, and B. Monemar Phys. Rev. Lett. 95, 209901 (2005) [View PDF (27 kB)] [DOI-link] top     2004:     132. Infrared dielectric functions and crystal orientation of a-plane ZnO thin films on r-plane sapphire determined by generalized ellipsometry C. Bundesmann, N. Ashkenov, M. Schubert, A. Rahm, H. v. Wenckstern, E. M. Kaidashev, M. Lorenz, and M. Grundmann Thin Solid Films 455-456, 161-166 (2004) [View PDF (158 kB)] [DOI-link]     131. Infrared dielectric function and phonon modes of Mg-rich cubic MgxZn1-xO (x > 0.67) thin films on sapphire [0001] C. Bundesmann, M. Schubert, D. Spemann, A. Rahm, H. Hochmuth, M. Lorenz, and M. Grundmann Appl. Phys. Lett. 85, 905 (2004) [View PDF (74 kB)] [DOI-link]     130. Analysis of band anticrossing in GaNxP1-x alloys I. A. Buyanova, M. Izadifard, A. Kasic, H. Arwin, W. M. Chen, H. P. Xin, Y. G. Hong, and C. W. Tu Phys. Rev. B 70, 085209 (2004) [View PDF (82 kB)] [DOI-link]     129. Strain related structural and vibrational properties of thin epitaxial AlN layers V. Darakchieva, J. Birch, M. Schubert, T. Paskova , S. Tungasmita, G. Wagner, A. Kasica, and B. Monemar Phys. Rev. B 70, 045411 (2004) [View PDF (359 kB)] [DOI-link]     128. Infrared Ellipsometry and Raman Studies of hexagonal InN films: correlation between strain and vibrational properties V. Darakchieva, P. Paskov, E. Valcheva, T. Paskova, M. Schubert, C. Bundesmann, H. Lu, W. J. Schaff, and B. Monemar Superlattices and Microstructures 36, 573-580 (2004) [View PDF (331 kB)] [DOI-link]     127. Deformation potentials of the E1(TO) and E2 modes of InN V. Darakchieva, P. P. Paskov, E. Valcheva, T. Paskova, B. Monemar, M. Schubert, H. Lu, and W. J. Schaff Appl. Phys. Lett. 84, 3636 (2004) [View PDF (57 kB)] [DOI-link]     126. Strain evolution and phonons in AlN/GaN superlattices V. Darakchieva, P. P. Paskov, M. Schubert, E. Valcheva, T. Paskova, H. Arwin, B. Monemar, H. Amano, and I. Akasaki Mat. Res. Soc. Symp. 798, Y5.60 (2004)     125. Optical and structural characteristics of virtually unstrained bulk-like GaN D. Gogova, A. Kasic, H. Larsson, B. Pécz, R. Yakimova, B. Magnusson, B. Monemar, F. Tuomisto, K. Saarinen, C. R. Miskys, M. Stutzmann, C. Bundesmann, and M. Schubert Jpn. J. Appl. Phys. 43, 1264 (2004) [DOI-link]     124. Strain-free bulk-like GaN grown by hydride-vapor-phase-epitaxy on two-step epitaxial lateral overgrown GaN template D. Gogova, A. Kasic, H. Larsson, C. Hemmingsson, B. Monemar, F. Tuomisto, K. Saarinen, L. Dobos, B. Pécz, P. Gibart, and B. Beaumont J. Appl. Phys. 96, 799-906 (2004) [DOI-link]     123. Characterization of high-quality free-standing GaN grown by HVPE D. Gogova, A. Kasic, H. Larsson, B. Pécz, R. Yakimova, I. G. Ivanov, and B.Monemar Physica scripta T114 , 18 (2004) [DOI-link]     122. X-Ray Investigations of the intrinsic Carbon-Incorporation during the MOVPE Growth of AlGaAs V. Gottschalch, G. Leibiger, and D. Spemann Z. Anorg. Allg. Chemie 630, 1419-1422 (2004) [View PDF (92 kB)]     121. Intrinsic carbon doping of (AlGa)As for (InGa)As laser structures (~1.17 mm) V. Gottschalch, G. Leibiger, G. Benndorf, H. Herrnberger, and D. Spemann J. Cryst. Growth 272, 642 (2004) [View PDF (265 kB)]     120. Facet coating of edge emitting 1.2 µm-wavelength (InGa)As laser diodes T. Gühne, V. Gottschalch, G. Leibiger, H. Herrnberger, J. Kovac, J. Kovac jr., R. Schmidt-Grund, and B. Rheinländer Proceedings of the 28th Workshop on Compound Semiconductor Devices and Integrated Circuits Europe , WOCSDICE (2004) [View PDF (1.5 MB)]     119. Far-Infrared Dielectric Function and Phonon Modes of Sponateously Ordered (AlxGa1-x)0.52In0.48P T. Hofmann, M. Schubert, and V. Gottschalch Thin Solid Films 455-456, 601-604 (2004) [View PDF (154 kB)] [DOI-link]     118. Protein adsorption in porous silicon gradients monitored by spatially-resolved spectroscopic ellipsometry L. M. Karlsson, M. Schubert, N. Ashkenov, and H. Arwin Thin Solid Films 455-456, 726-730 (2004) [View PDF (386 kB)] [DOI-link]     117. Micro-Raman scattering profiling studies on HVPE-grown free-standing GaN A. Kasic, D. Gogova, H. Larsson, C. Hemmingsson, I. Ivanov, B. Monemar, C. Bundesmann, and M. Schubert phys. stat. sol. (a) 201, 2773-2776 (2004) [View PDF (123 kB)]     116. Highly homogeneous bulk-like 2´´ GaN grown by HVPE on MOCVD-GaN template A. Kasic, D. Gogova, H. Larsson, I. Ivanov, J. Birch, B. Monemar, M. Fehrer, and V. Härle J. Cryst. Growth , accepted (2004)     115. InN dielectric function from the mid-infrared to the ultra-violet range A. Kasic, E. Valcheva, B. Monemar, H. Lu, and W. J. Schaff Phys. Rev. B 70, 115217 (2004) [View PDF (115 kB)] [DOI-link]     114. Optical properties of Zn1-xMnxSe epilayers determined by spectroscopic ellipsometry J. Kvietkova, B. Daniel, M. Hetterich, M. Schubert, D. Spemann, P. Pfundstein, and D. Gerthsen Thin Solid Films 455-456, 228-230 (2004) [View PDF (133 kB)] [DOI-link]     113. Near-band-gap dielectric function of Zn1-xMnxSe thin films determined by spectroscopic ellipsometry J. Kvietkova, B. Daniel, M. Hetterich, M. Schubert, D. Spemann, D. Litvinov, and D. Gerthsen Phys. Rev. B 70, 045316 (2004) [DOI-link]     112. Hydrogen implantation in InGaNAs studied by spectroscopic ellipsometry G. Leibiger, V. Gottschalch, N. Razek, A. Schindler, and M. Schubert Thin Solid Films 455-456, 231-234 (2004) [View PDF (106 kB)] [DOI-link]     111. Solar cells with (BGaIn)As and (InGa)(NAs) as absorption layers G. Leibiger, C. Krahmer, J. Bauer, H. Herrnberger, and V. Gottschalch J. Cryst. Growth 272, 732 (2004) [View PDF (244 kB)]     110. Infrared to Vacuum Ultraviolet Optical Properties of 3C, 4H and 6H Silicon Carbide Measured by Spectroscopic Ellipsometry O. P. A. Lindquist, Schubert, H. Arwin, and K. Järrendahl Thin Solid Films 455-456, 235-238 (2004) [View PDF (116 kB)] [DOI-link]     109. Advances of pulsed laser deposition of ZnO thin films M. Lorenz, H. Hochmuth, R. Schmidt-Grund, E.M. Kaidashev, and M. Grundmann Ann. Phys. 13, 59-61 (2004) [View PDF (131 kB)]     108. Radiative recombination processes in Al0.07Ga0.93N/GaN multiple quantum well structures, role of hole localisation B. Monemar, H. Haradizadeh, P. P. Paskov, J. P. Bergman, E. Valcheva, B. Arnadov, A. Kasic, P. O. Holtz, G. Pozina, S. Kamiyama, M. Iwaya, H. Amano, and I. Akasaki phys. stat. sol. (c) 1, 2500 (2004)     107. Polar and nonpolar GaN grown by HVPE: Preferable substrates for nitride-based emitting devices T. Paskova, P. P. Paskov, E. Valcheva, V. Darakchieva, J. Birch, A. Kasic, B. Arnaudov, S. Tungasmita, and B. Monemar phys. stat. sol. (a) 201, 2265 (2004) [View PDF (275 kB)]     106. Optical modelling of a layered photovoltaic device with a polyfluorene-copolymer as the active layer Nils-Krister Persson, M. Schubert, and O. Inganäs Solar Energy Materials and Solar Cells 83, 169-186 (2004) [DOI-link]     105. UV-VUV Spectroscopic ellipsometry of ternary MgxZn1-xO (x<0.53) thin films R. Schmidt-Grund, M. Schubert, B. Rheinländer, D. Fritsch, H. Schmidt, E. M. Kaidashev, M. Lorenz, C. M. Herzinger, and M. Grundmann Thin Solid Films 455-456, 500-504 (2004) [View PDF (259 kB)]     104. Carrier redistribution in organic/inorganic (poly(3,4-ethylenedioxy thiophene/poly(styrenesulfonate)polymer)-Si) heterojunction determined from infrared ellipsometry M. Schubert, C. Bundesmann, H. v. Wenckstern, G. Jakopic, A. Haase, N.-K. Persson, F. Zhang, H. Arwin, and O. Inganäs Appl. Phys. Lett. 84, 1311-1313 (2004) [View PDF (63 kB)]     103. Infrared dielectric function and vibrational modes of pentacene thin films M. Schubert, C. Bundesmann, G. Jakopic, and H. Arwin Appl. Phys. Lett. 84, 200-202 (2004) [View PDF (54 kB)]     102. Infrared ellipsometry characterization of conducting thin organic films M. Schubert, C. Bundesmann, G. Jakopic, H. Maresch, H. Arwin, N.-C. Persson, F. Zhang, and O. Inganäs Thin Solid Films 455-456, 295-300 (2004) [View PDF (136 kB)] [DOI-link]     101. Generalized ellipsometry for orthorhombic, absorbing materials: Dielectric functions, phonon modes, and band-to-band transitions of Sb2S3 M. Schubert, T. Hofmann, C. M. Herzinger, and W. Dollase Thin Solid Films 455-456, 619-623 (2004) [DOI-link]     100. Far-infrared magnetooptic generalized ellipsometry: determination of free-charge-carrier parameters in semiconductor thin film structures M. Schubert, T. Hofmann, and C. M. Herzinger Thin Solid Films 455-456, 563-570 (2004) [View PDF (239 kB)] [DOI-link]     99. Electro-optical properties of ZnO-BaTiO3-ZnO heterostructures grown by pulsed laser deposition M. Schubert, N. Ashkenov, T. Hofmann, H. Hochmuth, M. Lorenz, M. Grundmann, and G. Wagner Ann. Phys. 13, 61-62 (2004) [View PDF (213 kB)] [DOI-link]     98. Mie-resonances, infrared emission, and band gap of InN T. V. Shubina, S. V. Ivanov, V. N. Jmerik, D. D. Solnyshkov, V. A. Vekshin, P. S. Kop´ev, A. Vasson, J. Leymarie, A. Kavokin, H. Amano, K. Shimono, A. Kasic, and B. Monemar Phys. Rev. Lett. 92, 117407 (2004) [View PDF (592 kB)]     97. Enhanced weak Anderson localization phenomena in the magnetoresistance of n-type (Ga,In)(N,As) J. Teubert, P. J. Klar, W. Heimbrodt, K. Volz, W. Stolz, P. Thomas, G. Leibiger, and V. Gottschalch Appl. Phys. Lett. 84, 747 (2004) [View PDF (83 kB)] top     2003:     96. Infrared dielectric functions and phonon modes of high-quality ZnO films N. Ashkenov, B. N. Mbenkum, C. Bundesmann, V. Riede, M. Lorenz, E. M. Kaidashev, A. Kasic, M. Schubert, M. Grundmann, G. Wagner, and H. Neumann J. Appl. Phys. 93, 126 (2003) [View PDF (189 kB)]     95. Raman scattering in ZnO thin films doped with Fe, Sb, Ga and Li C. Bundesmann, N. Ashkenov, M. Schubert, D. Spemann, T. Butz, M. Lorenz, E. M. Kaidashev, and M. Grundmann Appl. Phys. Lett. 83, 1974-1976 (2003) [View PDF (59 kB)]     94. Metalorganic chemical vapor phase epitaxy of gallium-nitride on silicon A. Dadgar, A. Strittmatter, J. Bläsing, M. Poschenrieder, O. Contreras, P. Veit, T. Riemann, F. Bertram, A. Reiher, A. Krtschil, A. Diez, T. Hempel, T. Finger, A. Kasic, M. Schubert, D. Bimberg, F. A. Ponce, J. Christen, and A. Krost phys. stat. sol. (c) 0, 1583-1606 (2003) [View PDF (3.1 MB)]     93. Residual strain in HVPE GaN free-standing and re-grown homoepitaxial layers V. Darakchieva, T. Paskova, P.P. Paskov, B. Monemar, N. Ashkenov, and M. Schubert phys. stat. sol. (a) 195, 516-522 (2003) [View PDF (484 kB)]     92. Generalized infrared ellipsometry study of thin epitaxial AlN layers with complex strain behavior V. Darakchieva, M. Schubert, J. Birch, A. Kasic, S. Tungasmita, T. Paskova, and B. Monemar Physica B 340-342, 416 (2003) [View PDF (568 kB)]     91. Optical properties of undoped AlN/GaN superlattices grown by metal orgaic vapor phase epitaxy V. Darakchieva, P. P. Paskov, M. Schubert, T. Paskova, B. Monemar, S. Kamiyama, M. Iwaya, H. Amano, and I. Akasaki phys. stat. sol. c 0, 1-4 (2003)     90. MOVPE growth of BGaAs, BGaInAs, and BAlAs alloys on (001) GaAs V. Gottschalch, G. Leibiger, and G. Benndorf J. Cryst. Growth 248, 468 (2003) [View PDF (144 kB)]     89. Free-standing HVPE-GaN layers H. Larsson, D. Gogova, A. Kasic, R. Yakimova, B. Monemar, C. R. Miskys, and M. Stutzmann phys. stat. sol. (c) 0, 1985 (2003) [View PDF (686 kB)]     88. Far-infrared magnetooptical generalized ellipsometry determination of free-carrier parameters in semiconductor thin film structures T. Hofmann, M. Grundmann, C. M. Herzinger, M.Schubert, and W. Grill Mat. Res. Soc. Symp. Proc. 744, M5.32.1-6 (2003) [View PDF (154 kB)]     87. Far-Infrared dielectric function and phonon modes of spontaneously ordered (AlxGa1-x)0.52In0.48P T. Hofmann, V. Gottschalch, and M.Schubert Mat. Res. Soc. Symp. Proc. 744, M5.33.1-6 (2003) [View PDF (129 kB)]     86. Far-infrared-magneto-optic Ellipsometry characterization of free-charge-carrier properties in highly disordered n-type Al0.19Ga0.33In0.48P T. Hofmann, M. Schubert, C. M. Herzinger, and I. Pietzonka Appl. Phys. Lett. 82, 3463-3465 (2003) [View PDF (55 kB)] [DOI-link]     85. High electron mobility of epitaxial ZnO thin films on c-plane sapphire grown by multi-step pulsed laser deposition E. M. Kaidashev, M. Lorenz, H. von Wenckstern, A. Rahm, H.-C. Semmelhack, K.-H. Han, G. Benndorf, C. Bundesmann, H. Hochmuth, and M. Grundmann Appl. Phys. Lett. 82, 3901 (2003) [View PDF (146 kB)]     84. Phonons and free-carrier properties of binary, ternary, and quaternary group-III nitride layers measured by Infrared Spectroscopic Ellipsometry A. Kasic, M. Schubert, J. Off, B. Kuhn, F. Scholz, S. Einfeldt, T. Böttcher, D. Hommel, D. J. As, U. Köhler, A. Dadgar, A. Krost, Y. Saito, Y. Nanishi, M. R. Correia, S. Pereira, V. Darakchieva, B. Monemar, H. Amano, I. Akasaki, and G. Wagner phys. stat. sol. (c) 0, 1750 (2003) [View PDF (1.3 MB)]     83. Interband transitions and phonon modes in GaBxAs1-x (0 <= x < 0.33) and GaNxAs1-x (0 <= x < 0.29) G. Leibiger, V. Gottschalch, V. Riede, M. Schubert, J. N. Hilfiker, and T. E. Tiwald Phys. Rev. B 67, 195205 (2003) [View PDF (120 kB)] [DOI-link]     82. Si- and Zn-doping of InGaNAs and BGaInAs G. Leibiger, C. Krahmer, V. Gottschalch, G. Bennorf, and V. Riede Proceedings of the 10th European Workshop on Metalorganic Vapour-phase Epitaxy , 177 (2003)     81. Optical and electrical properties of epitaxial (Mg,Cd)xZn1-xO, ZnO, and ZnO:(Ga, Al) thin films on c-plane sapphire grown by pulsed laser deposition M. Lorenz, E. M. Kaidashev, H. von Wenckstern, V. Riede, C. Bundesmann, D. Spemann, G. Benndorf, H. Hochmuth, A. Rahm, H.-C. Semmelhack, and M. Grundmann Solid State Electronics 47, 2205-2209 (2003) [View PDF (293 kB)]     80. Optical properties of ternary MgZnO thin films R. Schmidt, C. Bundesmann, N. Ashkenov, B. Rheinländer, M. Schubert, M. Lorenz, E. M. Kaidashev, D. Spemann, T. Butz, J. Lenzner, and M. Grundmann IoP Conf. Series 171, P11 (2003) [View PDF (291 kB)]     79. Dielectric functions (1 to 5 eV) of wurtzite MgxZn1-xO (x<0.29) thin films R. Schmidt, B. Rheinländer, M. Schubert, D. Spemann, T. Butz, J. Lenzner, E. M. Kaidashev, M. Lorenz, A. Rahm, H. C. Semmelhack, and M. Grundmann Appl. Phys. Lett. 82, 2260-2262 (2003) [View PDF (75 kB)]     78. Generalized far-infrared magneto-optic ellipsometry for semiconductor layer structures: Determination of free-carrier effective mass, mobility and concentration parameters in n-type GaAs M. Schubert, T. Hofmann, and C. M. Herzinger J. Opt. Soc. Am. A 20, 347-356 (2003) [View PDF (257 kB)] [DOI-link]     77. Phonons and polaritons in semiconductor layer structures M. Schubert , and T. Hofmann SPIE Vol. 5218, 210-222 (2003) [DOI-link] top     2002:     76. Infrared dielectric functions and phonon modes of wurtzite MgxZn1-xO (x <= 0.2) C. Bundesmann, M. Schubert, D. Spemann, T. Butz, M. Lorenz, E. M. Kaidashev, M. Grundmann, N. Ashkenov, H. Neumann, and G. Wagner Appl. Phys. Lett. 81, 2376 - 2378 (2002) [View PDF (142 kB)]     75. Low-orbit-environment protective coating for all-solid-state electrochromic surface heat radiation control devices E. Franke, H. Neumann, M. Schubert, C. L. Trimble, and J. A. Woollam Surf. Coat. Techn. 151-152, 285 - 288 (2002) [View PDF (118 kB)]     74. Plasma-enhanced chemical vapor deposition of SiOx/SiNx Bragg reflectors V. Gottschalch, R. Schmidt, B. Rheinländer, D. Pudis, S. Hardt, J. Kvietkova, G. Wagner, and R. Franzheld Thin Solid Films 416, 224-232 (2002) [View PDF (816 kB)]     73. AIII-BV-Mischkristallbildung bei der metallorganischen Gasphasenepitaxie auf (001) GaAs Substraten V. Gottschalch, G. Leibiger, and G. Benndorf Z. Anorg. Allg. Chemie 628, 2156 (2002)     72. Far-infrared Magneto-Optical Generalized Ellipsometry determination of free-carrier parameters in semiconductor thin film structures T. Hofmann, M. Schubert, and C. M. Herzinger SPIE Vol. 4779, 90-97 (2002) [DOI-link]     71. Far-Infrared dielectric anisotropy and phonon modes in spontaneously CuPt-ordered Ga0.52In0.48P T. Hofmann, V. Gottschalch, and M. Schubert Phys. Rev. B 66, 195204 1-10 (2002) [View PDF (255 kB)] [DOI-link]     70. Effective electron mass and phonon modes in n-type hexagonal InN A. Kasic, M. Schubert, Y. Saito, Y. Nanishi, and G. Wagner Phys. Rev. B 65, 115206 (2002) [View PDF (156 kB)] [DOI-link]     69. Optical phonon modes and interband transitions in cubic AlxGa1-xN films A. Kasic, M. Schubert, T. Frey, U. Köhler, D. J. As, and C. M. Herzinger Phys. Rev. B 65, 184302 (2002) [View PDF (210 kB)] [DOI-link]     68. Infrared spectroscopic ellipsometry - a new tool for characterization of semiconductor heterostructures A. Kasic, M. Schubert, S. Einfeldt, and D. Hommel Vib. Spectrosc. 29, 121 (2002) [View PDF (100 kB)]     67. Optical phonons in hexagonal AlxInyGa1-x-yN (y ~ 0.12) A. Kasic, M. Schubert, J. Off, F. Scholz, S. Einfeldt, and D. Hommel phys. stat. sol. (b) 234, 970 (2002) [View PDF (239 kB)]     66. Evolution of the optical properties of III-V Nitride alloys: Band-to-Band transitions in GaPN G. Leibiger, M. Schubert, V. Gottschalch, G. Benndorf, and R. Schwabe Phys. Rev. B 65, 245207 1-6 (2002) [View PDF (98 kB)] [DOI-link]     65. Generalized ellipsometry of complex mediums in layered systems M. Schubert, A. Kasic, T. Hofmann, V. Gottschalch, J. Off, F. Scholz, E. Schubert, H. Neumann, I. Hodgkinson, M. Arnold, W. Dollase, and C. M. Herzinger SPIE Vol. 4806, 264 (2002) [View PDF (608 kB)] [DOI-link]     64. Interband transitions in [001]-(GaP)1(InP)m superlattices M. Schubert, H. Schmi dt, J. Sik, T. Hofmann, V. Gottschalch, W. Grill, G. Böhm, and G. Wagner Mat. Sci. Eng. B 88, 125 - 128 (2002) [View PDF (144 kB)] [DOI-link]     63. Generalized ellipsometry for biaxial absorbing materials: determination of crystal orientation and optical constants of Sb2S3 M. Schubert, and W. Dollase Opt. Lett. 27, 2073 - 2075 (2002) [View PDF (115 kB)] top     2001:     62. Optical properties of amorphous and crystalline tantalum oxide thin films measured by IR-VIS-VUV (0.03eV-8.5eV) spectroscopic ellipsometry E. Franke, M. Schubert, C.L. Trimble, and J.A. Woollam Thin Solid Films 388, 283-289 (2001) [View PDF (201 kB)] [DOI-link]     61. Infrared dielectric function and phonon modes of highly disordered (AlxGa1-x)0.52In0.48P T. Hofmann, G. Leibiger, V. Gottschalch, Ines Pietzonka, and M. Schubert Phys. Rev. B 64, 155206 (2001) [View PDF (297 kB)] [DOI-link]     60. Effective carrier mass and mobility versus carrier concentration in p- and n-type α-GaN determined by infrared ellipsometry and Hall resistivity measurements A. Kasic, M. Schubert, B. Rheinländer, V. Riede, S. Einfeldt, D. Hommel, B. Kuhn, J. Off, and F. Scholz Mat. Sci. Eng. B 82, 74 (2001) [View PDF (79 kB)]     59. Strain and composition dependence of the E1(TO) mode in hexagonal AlxIn1-xN thin films A. Kasic, M. Schubert, J. Off, and F. Scholz Appl. Phys. Lett. 78, 1526 (2001) [View PDF (61 kB)]     58. Disorder-activated infrared modes and surface depletion layer in highly Si-doped hexagonal GaN A. Kasic, M. Schubert, B. Kuhn, F. Scholz, S. Einfeldt, and D. Hommel J. Appl. Phys. 87, 3720 (2001) [View PDF (85 kB)]     57. IR-VUV Dielectric Function of Al1-xInxN determined by spectroscopic ellipsometry A. Kasic, M. Schubert, B. Rheinländer, J. Off, F. Scholz, and C. M. Herzinger Mat. Res. Soc. Symp. 639, G6.13 (2001) [View PDF (106 kB)]     56. Optical properties of AlxIn1-xN thin films determined by spectroscopic ellipsometry A. Kasic, M. Schubert, B. Rheinländer, J. Off, F. Scholz, and C. M. Herzinger Proceedings of the 27th International Symposium on Compound Semiconductors , (2001)     55. Anisotropic dielectric function spectra from single crystal CuInSe2with orientation domains A. Kreuter, K. Otte, G. Lippold, G. Wagner, A. Schindler, and M. Schubert Appl. Phys. Lett. 78, 195-197 (2001) [View PDF (109 kB)]     54. Phonon modes of GaP1-yNy measured by mid-infrared spectroscopic ellipsometry G. Leibiger, V. Gottschalch, A. Kasic, and M. Schubert Appl. Phys. Lett. 79, 3407 (2001) [View PDF (60 kB)]     53. Optical functions, phonon properties, and composition of InGaAsN single layers derived from far - and near - infrared spectroscopic ellipsometry G. Leibiger, V. Gottschalch, and M. Schubert J. Appl. Phys 90, 5951 - 5958 (2001) [View PDF (127 kB)]     52. Phonon modes and critical points of GaNP G. Leibiger, V. Gottschalch, G. Benndorf, R. Schwabe, and M. Schubert phys. stat. sol. (a) 228, 279 - 282 (2001) [View PDF (79 kB)]     51. Phonon modes of InGaAsN measured by far infrared spectroscopic ellipsometry G. Leibiger, V. Gottschalch, and M. Schubert phys. stat. sol. (a) 228, 259 - 262 (2001) [View PDF (88 kB)]     50. Model dielectric function spectra of GaAsN for far-infrared and near-infrared to ultra violet wavelengths G. Leibiger, V. Gottschalch, B. Rheinländer, J. Sik, and M. Schubert J. Appl. Phys. 89, 4927-4938 (2001) [View PDF (194 kB)]     49. Optical Constants, Critical Points, and Phonon Modes of GaAsN Single Layers G. Leibiger, V. Gottschalch, A. Kasic, B. Rheinländer, J. Sik, and M. Schubert Mat. Res. Soc. Symp. 639, G6.35 (2001) [View PDF (162 kB)]     48. Optical constants, critical points, free carrier effects, and phonon modes of GaAsN single layers and GaAsN/InAs/GaAs superlattices G. Leibiger, V. Gottschalch, B. Rheinländer, A. Kasic, M. Schubert, and J. Sik Proceedings of the 27th International Symposium on Compound Semiconductors , (2001)     47. Ellipsometry on anisotropic materials: Bragg conditions and phonons in dielectric helical thin films M. Schubert, and C. M. Herzinger phys. stat. sol. (a) 188, 1563 - 1575 (2001) [View PDF (365 kB)]     46. Infrared Ellipsometry- a novel tool for characterization of group-III-Nitride Heterostructrues for optoelectronic device applications M. Schubert, A. Kasic, S. Einfeldt, D. Hommel, U. Köhler, D. J. As, J. Off, B. Kuhn, F. Scholz, and J. A. Woollam phys. stat. sol. (a) 228, 437 (2001) [View PDF (462 kB)]     45. Infrared Spectroscopic Ellipsometry for nondestructive characterization of free-carrier and crystal-structure properties of group-III-nitride semiconductor device heterostructures M. Schubert, A. Kasic, S. Figge, M. Diesselberg, S. Einfeldt, D. Hommel, U. Köhler, D. J. As, J. Off, B. Kuhn, F. Scholz, J. A. Woollam, and C. M. Herzinger SPIE Vol. 4449, -8 (2001) [View PDF (901 kB)]     44. Phonons and free carriers in strained hexagonal GaN/AlGaN superlattices measured by Infrared ellipsometry and Raman spectroscopy M. Schubert, A. Kasic, J. Sik, S. Einfeldt, D. Hommel, V. Haerle, J. Off, and F. Scholz Mat. Sci. Eng. B 82, 178 (2001) [View PDF (204 kB)]     43. Band-gap energies, optical constants, phonons and free carrier properties in GaNAs/InAs/GaAs superlattice heterostructures measured by spectroscopic ellipsometry J. Sik, M. Schubert, G. Leibiger, and V. Gottschalch J. Appl. Phys. 89, 294-305 (2001) [View PDF (321 kB)]     42. Infrared response of multiple-component free-carrier plasma in heavily doped p-type GaAs Zangooie, S., Schubert, M., Thompson, D.W., and Woollam, J.A. Appl. Phys. Lett. 78, 937 (2001) [View PDF (58 kB)]     41. Infrared optical properties of aged porous GaAs S. Zangooie, T. E. Tiwald, M. Schubert, and J. A. Woollam J. Mat. Res. 16, 1241-1244 (2001)     40. Infrared Ellipsometry characterization of porous silicon Bragg reflectors S. Zangooie, M. Schubert, C. Trimble, D. W. Thompson, and J. A. Woollam Appl. Opt. 88, 906-912 (2001) top     2000:     39. In-situ ellipsometry growth characterization of dual ion beam deposited boron nitride thin films E. Franke, M. Schubert, J. A. Woollam, J.-D. Hecht, H. Neumann, G. Wagner, and F. Bigl J. Appl. Phys. 87, 2593-2599 (2000) [View PDF (632 kB)]     38. All-Solid state electrochromic device for emittance modulation in the infrared spectral region E. Franke, C.L. Trimble, J.S. Hale, M. Schubert, and J. A. Woollam Appl. Phys. Lett. 77, 930-932 (2000) [View PDF (46 kB)]     37. Dielectric function of amorphous tantalum oxide from the far infrared to the deep ultraviolet spectral region measured by spectroscopic ellipsometry E. Franke, M. Schubert, C.L. Trimble, M.J. DeVries, J.A. Woollam, and F. Frost J. Appl. Phys. 88, 5166-5174 (2000) [View PDF (255 kB)]     36. Infrared switching electrochromic devices based on tungsten oxide E. Franke, C.L. Trimble, J.S. Hale, M. Schubert, and J.A. Woollam J. Appl. Phys. 88, 5777-5784 (2000) [View PDF (126 kB)]     35. Free-carrier and phonon properties of n- and p-type hexagonal GaN films measured by infrared ellipsometry A. Kasic, M. Schubert, S. Einfeldt, D. Hommel, and T. E. Tiwald Phys. Rev. B 62, 7365 (2000) [View PDF (187 kB)] [DOI-link]     34. Nitrogen dependence of the GaAsN interband critical points E1 and E1 + Δ1 determined by spectroscopic ellipsomety Leibiger, G., Gottschalch, V., Rheinländer, B., Sik J., and Schubert, M. Appl. Phys. Lett. 77, 1650-1652 (2000) [View PDF (62 kB)]     33. Optical properties of GaAs1-yNy G. Leibiger, B. Rheinländer, V. Gottschalch, M. Schubert, J. Sik, and G. Lippold Proceedings of the International Conference on Advanced Semiconductor Devices and Microsystems ASDA , 171-174 (2000)     32. Excitonic effects of InAs monolayers in GaAs/AlGaAs-microcavities S. Nassauer, A. Kasic, B. Rheinländer, V. Gottschalch, J. Kovác, J. Kvietková , and G. Benndorf Microelectron. Eng. 51-52, 401 (2000) [View PDF (271 kB)]     31. Infrared dielectric anisotropy and phonon modes of sapphire M. Schubert, Tiwald, T. E., and Herzinger, C. M. Phys. Rev. B 61, 8187-8201 (2000) [View PDF (294 kB)] [DOI-link]     30. Phonons and free carriers in a strained hexagonal GaN-AlN superlattice measured by Infrared Ellipsometry and Raman spectroscopy M. Schubert, A. Kasic, T.E. Tiwald, J.A. Woollam, V. Härle, and F. Scholz MRS Internet J. Nitride Semicond. Res. 5S1, W11.39 (2000) [View PDF (108 kB)]     29. Free-carrier effects and optical phonons in GaNAs/GaAs superlattice heterostructures measured by infrared spectroscopic ellipsometry J. Sik, M. Schubert, T. Hofmann, and V. Gottschalch MRS Internet J. Nitride Semicond. Res. 5, 3 (2000)     28. Near-band-gap optical functions spectra and band-gap energies of GaNAs/GaAs superlattice heterostructures measured by spectroscopic ellipsometry J. Sik, M. Schubert, G. Leibiger, G. Kirpal, V. Gottschalch, and J. Humlicek Appl. Phys. Lett. 76, 2859-2861 (2000) [View PDF (121 kB)]     27. Measurement of rutile TiO2 dielectric tensor from 0.148 to 33 \mum using generalized ellipsometry T. E. Tiwald, and M. Schubert SPIE Vol. 4103, 19-29 (2000) [View PDF (677 kB)] top     1999:     26. Isotropic dielectric functions of highly disordered AlxGa1-xInP (0 < x < 1) lattice matched to GaAs M. Schubert, Woollam, J. A., Leibiger, G., Rheinländer, B., Pietzonka, I., Saß, T., and Gottschalch, V. J. Appl. Phys. 86, 2025-2033 (1999) [View PDF (146 kB)]     25. Near-band-gap CuPt order birefringence in Al0.48Ga0.52InP2 M. Schubert, T. Hofmann, B. Rheinländer, I. Pietzonka, T. Saß, V. Gottschalch, and J. A. Woollam Phys. Rev. B 60, 16618 - 16634 (1999) [View PDF (337 kB)] [DOI-link]     24. Explicit solutions for the optical properties of arbitrary magneto-optic materials in generalized ellipsometry M. Schubert, T.E. Tiwald, and J.A. Woollam Applied Optics 38, 177-187 (1999) [View PDF (1.6 MB)]     23. Free-carrier response and lattice modes of group III-nitride heterostructures measured by infrared ellipsometry M. Schubert, J. A. Woollam, A. Kasic, B. Rheinländer, J. Off, B. Kuhn, and F. Scholz phys. stat. sol. (b) 216, 655 (1999) [View PDF (175 kB)]     22. Optical phonons and free-carrier effects in MOVPE grown AlxGa1-xN measured by infrared ellipsometry M. Schubert, A. Kasic, T. E. Tiwald, J. Off, B. Kuhn, and F. Scholz MRS Internet J. Nitride Semicond. Res. 4, 11 (1999) [View PDF (309 kB)] top     1998:     21. In-situ infrared and visible-light ellipsometric investigations of boron nitride thin films at elevated temperatures E. Franke, M. Schubert, J.-D. Hecht, H. Neumann, T. E. Tiwald, H. Yao, J. A. Woollam, and J. Hahn J. Appl. Phys. 84, 526-532 (1998) [View PDF (158 kB)]     20. Birefringence and reflectivity of single crystal CdAl2Se4 by generalized ellipsometry J.-D. Hecht, A. Eifler, V. Riede, M. Schubert, G. Krauß, and V. Krämer Phys. Rev. B 57, 7037-7042 (1998) [View PDF (159 kB)] [DOI-link]     19. Spectroscopic ellipsometry: Application to complex optoelectronic layer systems B. Rheinländer, M. Schubert, and H. Schmidt in Heterostructure Epitaxy and Devices - HEAD'97 , 151-154 (1998)     18. Generalized ellipsometry and complex optical systems M. Schubert Thin Solid Films 313-314, 323-332 (1998) [View PDF (282 kB)] [DOI-link]     17. Optical investigations of mixed-phase boron nitride thin films by infrared spectroscopic ellipsometry M. Schubert, E. Franke, H. Neumann, T. E. Tiwald, D. Thompson, J. A. Woollam, and J. Hahn Thin Solid Films 313-314, 692-696 (1998) [View PDF (246 kB)] [DOI-link] top     1997:     16. Infrared-ellipsometry on hexagonal and cubic boron nitride thin films E. Franke, H. Neumann, M. Schubert, T.E. Tiwald, J.A. Woollam, and J. Hahn Appl. Phys. Lett. 70, 1668-1670 (1997) [View PDF (101 kB)]     15. Phase and Microstructure investigations of boron nitride thin films by spectroscopic ellipsometry in the visible and infrared spectral range E. Franke, M. Schubert, H. Neumann, T.E. Tiwald, D. Thompson, J.A. Woollam, J. Hahn, and F. Richter J. Appl. Phys. 82, 2906-2911 (1997) [View PDF (154 kB)]     14. Dielectric function effects due to isovalent monolayers of III-elements buried in GaAs, GaP and AlGaAs H. Schmid t, B. Rheinländer, A. Kasic, and V. Gottschalch phys. stat. sol. (a) 164, 123 (1997) [View PDF (167 kB)]     13. Spectroscopic ellipsometric studies of InAs monolayers embedded in GaAs B. Rheinländer, H. Schmid t, and V. Gottschalch Appl. Phys. Lett. 70, 1736-1737 (1997)     12. Anisotropy of boron nitride thin-film reflectivity spectra by generalized ellipsometry M. Schubert, B. Rheinländer, E. Franke, H. Neumann, J. Hahn, M. Röder, and F. Richter Appl. Phys. Lett. 70, 1819-1821 (1997) [View PDF (122 kB)]     11. Application of generalized ellipsometry to complex optical systems M. Schubert, B. Rheinländer, B. Johs, and J. A. Woollam SPIE Vol. 3094, 255-265 (1997)     10. Infrared optical properties of mixed-phase thin films studied by spectroscopic ellipsometry and boron nitride as an example M. Schubert, B. Rheinländer, E. Franke, H. Neumann, T.E. Tiwald, J.A. Woollam, J. Hahn, and F. Richter Phys. Rev. B 56, 13306-13313 (1997) [View PDF (209 kB)] top     1996:     9. Optical properties of microconfined liquid crystals C. Cramer, H. Binder, M. Schubert, B. Rheinländer, and H. Schmiedel Mol. Cryst. Liq. Cryst. 282, 395-405 (1996)     8. Polarization-dependent optical parameters of arbitarily anisotropic homogeneous layered systems M. Schubert Phys. Rev. B 53, 4265-4274 (1996) [View PDF (187 kB)] [DOI-link]     7. Direct-gap reduction and valence-band splitting of ordered indirect-gap AlInP2 studied by dark-field spectroscopy M. Schubert, B. Rheinländer, E. Franke, I. Pietzonka, J. Skriniarova, and V. Gottschalch Phys. Rev. B 54, 17616-17619 (1996) [View PDF (147 kB)] [DOI-link]     6. Extension of rotating-analyzer ellipsometry to generalized ellipsometry: determination of the dielectric function tensor from uniaxial TiO2 Schubert, M., Rheinländer, B., Woollam, J.A., Johs B., and Herzinger,C. M. J. Opt. Soc. Am. A 13, 875-883 (1996) [View PDF (1.3 MB)]     5. Generalized Transmission Ellipsometry for twisted biaxial dielectric media: Application to chiral liquid crystals M. Schubert, B. Rheinländer, C. Cramer, H. Schmiedel, B. Johs, C. M. Herzinger, and J.A.Woollam J. Opt. Soc. Am. A 13, 1930-1940 (1996) [View PDF (2.5 MB)] [DOI-link]     4. Band-gap reduction and valence-band splitting in spontaneously ordered (Al,Ga)InP studied by dark-field spectroscopy and generalized ellipsometry M. Schubert, B. Rheinländer, V. Gottschalch, and J. A. Woollam The Physics of Semiconductors 1, 473 (1996) top     1995:     3. Dark-field-spectroscopy on spontaneously ordered GaInP2 B. Rheinländer, M. Schubert, and V. Gottschalch phys. stat. sol. (a) 152, 287-292 (1995)     2. Optical constants of GaxIn1-xP lattice matched to GaAs M. Schubert, V. Gottschalch, C. M. Herzinger, H. Yao, P. G. Snyder, and J. A. Woollam J. Appl. Phys. 77, 3416-3419 (1995)     1. Band-gap reduction and valence band splitting in spontaneously ordered GaInP2 studied by Dark-field-spectroscopy M. Schubert, B. Rheinländer, and V. Gottschalch Solid State Commun. 95, 723-726 (1995) top generated using Sembib V0.1 © T. Hofmann (2003) last database entry from 2009-11-05