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Schöche
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Publications

Journal articles: In submission   2015   2014   2013   2012   2011   2010   2009   2008  

Electronic documents are intended for internal use only.
Corrections are added for misprints where known.

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2015:

    11. Structural properties and dielectric function of graphene grown by high-temperature sublimation on 4H-SiC(000-1)
C. Bouhafs, V. Darakchieva, I. L. Persson, A. Tiberj, P. O. Å. Persson, M. Paillet, A.-A. Zahab, P. Landois, S. Juillaguet, S. Schöche, M. Schubert, and R. Yakimova
J. Appl. Phys. 117, 085701 (2015) [View PDF (4.9 MB)] [DOI-link]


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2014:

    10. Effect of Mg doping on the structural and free-charge carrier properties of InN thin films
M.-Y. Xie, N. Ben Sedrine, S. Schöche, T. Hofmann, M. Schubert, L. Hong, B. Monemar, X. Wang, A. Yoshikawa, K. Wang, T. Araki, Y. Nanishi, and V. Darakchieva
J. Appl. Phys. 115, 163504 (2014) [View PDF (2.5 MB)] [DOI-link]


    9. Free-charge carrier parameters of n-type, p-type and compensated InN:Mg determined by Infrared Spectroscopic Ellipsometry
S. Schöche, T. Hofmann, V. Darakchieva, X. Wang, A. Yoshikawa, K. Wang, T. Araki, Y. Nanishi, and M. Schubert
Thin Solid Films 571, 384-388 (2014) [DOI-link]


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2013:

    8. Infrared to vacuum-ultraviolet ellipsometry and optical Hall-effect study of free-charge carrier parameters in Mg-doped InN
S. Schöche, T. Hofmann, V. Darakchieva, N. Ben Sedrine, X. Wang, A. Yoshikawa, and M. Schubert
J. Appl. Phys. 113, 013502 (2013) [View PDF (2.3 MB)] [DOI-link]


    7. Electron effective mass in Al0.72Ga0.28N alloys determined by mid-infrared optical Hall effect
S. Schöche, P. Kühne, T. Hofmann, M. Schubert, D. Nilsson, A. Kakanakova-Georgieva, E. Janzén, and V. Darakchieva
Appl. Phys. Lett. 103, 212107 (2013) [View PDF (605 kB)] [DOI-link]


    6. Infrared dielectric anisotropy and phonon modes of rutile TiO2
S. Schöche, T. Hofmann, R. Korlacki, T. E. Tiwald, and M. Schubert
J. Appl. Phys. 113, 164102 (2013) [View PDF (2.9 MB)] [DOI-link]


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2012:

    5. Temperature dependent effective mass in AlGaN/GaN high electron mobility transistor structures
T. Hofmann, P. Kühne, S. Schöche, Jr.-Tai Chen, U. Forsberg, E. Janzen, N. Ben Sedrine, C.M. Herzinger, J.A. Woollam, M. Schubert, and V. Darakchieva
Appl. Phys. Lett. 101, 192102 (2012) [View PDF (508 kB)] [DOI-link]


    4. Infrared ellipsometry and near-infrared-to-vacuum-ultraviolet ellipsometry study of free-charge carrier properties in In-polar p-type InN
S. Schöche, T. Hofmann, N. B. Sedrine, V. Darakchieva, B. Monemar, X. Wang, A. Yoshikawa, and M. Schubert
Mat. Res. Soc. Symp. Proc. 1396, O07-27 (2012) [DOI-link]


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2011:

    3. Optical properties of BaTiO3/ZnO heterostructures under the effect of an applied bias
T. Böntgen, S.Schöche, R. Schmidt-Grund, C. Sturm, M. Brandt, H. Hochmuth, M. Lorenz, and M. Grundmann
Thin Solid Films 519, 2933-2935 (2011) [DOI-link]


    2. Structural properties of BaTiO3/ZnO heterostructures and interfaces
C. Kranert, T. Böntgen, R. Schmidt-Grund, M. Brandt, S. Schöche, C. Sturm, H. Hochmuth, M. Lorenz, and M. Grundmann
AIP Conference Proceeding Series 1399, xxx (2011)


    1. Terahertz optical-Hall effect characterization of two-dimensional electron gas properties in AlGaN/GaN high electron mobility transistor structures
S. Schöche, J. Shi, A. Boosalis, P. Kühne, C. M. Herzinger, J. A. Woollam and W. J. Schaff, L. F. Eastman, M. Schubert, and T. Hofmann
Appl. Phys. Lett. 98, 092103 (2011) [View PDF (153 kB)] [DOI-link]


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generated using Sembib V0.1 © T. Hofmann (2003) last database entry from 2017-09-09