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   Home > People > Boosalis
Alex Boosalis
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Publications

Journal articles: In submission   2015   2014   2013   2012   2011   2010  

Electronic documents are intended for internal use only.
Corrections are added for misprints where known.

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2014:

    13. Morphological and electronic properties of epitaxial graphene on SiC
R. Yakimova, T. Iakimov, G.R. Yazdi, C. Bouhafs, J. Eriksson, A. Zakharov, A. Boosalis, M. Schubert, and V. Darakchieva
Physica B: Condensed Matter 439, 54-59 (2014) [View PDF (2.6 MB)] [DOI-link]


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2013:

    12. A Model Dielectric Function for Graphene from the Infrared to the Ultraviolet
A. Boosalis, R. Elmquist, M. Real, N. Nguyen, M. Schubert, and T. Hofmann
Mat. Res. Soc. Symp. Proc. 1505, (2013) [View PDF (838 kB)] [DOI-link]


    11. Large-area microfocal spectroscopic ellipsometry mapping of thickness and electronic properties of epitaxial graphene on Si- and C-face of 3C-SiC (111)
V. Darakchieva, A. Boosalis, A. A. Zakharov, T. Hofmann, M. Schubert, T. E. Tiwald, T. Iakimov, R. Vasiliauskas, and R. Yakimova
App. Phys. Lett. 102, 213116 (2013) [View PDF (1.8 MB)] [DOI-link]


    10. Reflection-type optical-Hall effect measurement of Landau-level transitions in epitaxial graphene on silicon carbide - coupled phonon mode
P. Kühne, A. Boosalis, C. M. Herzinger, L.O. Nyakiti, V.D. Wheeler, R.L. Myers-Ward, C.R. Eddy, Jr., D.K. Gaskill, M. Schubert, and T. Hofmann
Mat. Res. Soc. Symp. Proc. 1505, w07-44 (2013) [DOI-link]


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2012:

    9. Spectroscopic Mapping Ellipsometry of Graphene Grown on 3C SiC
A. Boosalis, T. Hofmann, V. Darakchieva, R. Yakimova, Tom Tiwald, and M. Schubert
Mat. Res. Soc. Symp. Proc. 1407, aa20-43 (2012) [View PDF (531 kB)] [DOI-link]


    8. Visible to Vacuum Ultraviolet Dielectric Functions of Epitaxial Graphene on 3C and 4H SiC Polytypes Determined by Spectroscopic Ellipsometry
A. Boosalis, T. Hofmann, V. Darakchieva, R. Yakimova, and M. Schubert
Appl. Phys. Lett. 101, 011912 (2012) [View PDF (669 kB)] [DOI-link]


    7. Metal slanted columnar thin film THz optical sensors
T. Hofmann, D. Schmidt, A. Boosalis, P. Kühne, C. Herzinger, J. Woollam, E. Schubert, and M. Schubert
Mat. Res. Soc. Symp. Proc. 1409, CC13-31 (2012) [View PDF (748 kB)] [DOI-link]


    6. Highlighted by IOP
Direct graphene growth on Co3O4(111) by molecular beam epitaxy

M. Zhou, F. L. Pasquale, P. A. Dowben, A. Boosalis, M. Schubert, V. Darakchieva, R. Yakimova, L. Kong, and J. A. Kelber
J. Phys.: Condens. Matter 24, 072201 (2012) [View PDF (542 kB)] [DOI-link]


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2011:

    5. Free-charge carrier profiles of iso- and aniso-type Si homojunctions determined by terahertz and mid-infrared ellipsometry
A. Boosalis, T. Hofmann, J. \vSik, and M. Schubert
Thin Solid Films 519, 2604 (2011) [View PDF (355 kB)] [DOI-link]


    4. Selected for publication in
Vir. J. Nan. Sci. & Tech. Vol. 23 (5) (2011)

Hole-channel conductivity in epitaxial graphene determined by terahertz optical-Hall effect and midinfrared ellipsometry

T. Hofmann, A. Boosalis, P. Kühne, C. M. Herzinger, J. A. Woollam, D. K. Gaskill, J. L. Tedesco, and M. Schubert
Appl. Phys. Lett. 98, 041906 (2011) [View PDF (175 kB)] [DOI-link]


    3. THz dielectric anisotropy of metal slanted columnar thin films
T. Hofmann, D. Schmidt, A. Boosalis, P. Kuehne, R. Skomski, C.M. Herzinger, J.A. Woollam, M. Schubert, and E. Schubert
Appl. Phys. Lett. 99, 081903 (2011) [View PDF (543 kB)] [DOI-link]


    2. Terahertz optical-Hall effect characterization of two-dimensional electron gas properties in AlGaN/GaN high electron mobility transistor structures
S. Schöche, J. Shi, A. Boosalis, P. Kühne, C. M. Herzinger, J. A. Woollam and W. J. Schaff, L. F. Eastman, M. Schubert, and T. Hofmann
Appl. Phys. Lett. 98, 092103 (2011) [View PDF (153 kB)] [DOI-link]


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2010:

    1. Variable-wavelength frequency-domain THz ellipsometry
T. Hofmann, C.M. Herzinger, A. Boosalis, T.E. Tiwald, J.A. Woollam, and M. Schubert
Rev. Sci. Instrum. 81, 023101 (2010) [View PDF (303 kB)] [DOI-link]


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generated using Sembib V0.1 © T. Hofmann (2003) last database entry from 2017-10-21